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       February 2014

Low Noise Amplifiers

These GaAs, pHEMT LNAs offer active bias, high linearity, superior gain, and industry-leading noise figure performance. The devices feature Skyworks advanced, pHEMT enhancement mode process in compact 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) packages.

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TriQuint GaN

TriQuint's new TQGaN25HV GaN on SiC process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions, can lower system costs in terms of fewer amplifier lineups and lower thermal management costs while extending long term product reliability.

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Sierra Wireless AirPrime® MC7354 Multi Carrier Module

These embedded modules deliver high speed connectivity with a variety of advanced air interfaces, including LTE frequencies, and are designed for industrial M2M and mobile computing solutions.

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New flow 0 SiC 2nd
Generation Modules

These 2G flow 0 SiC modules for solar inverter and battery management applications feature SiC MOSFET switches and Schottky diodes for ultra fast switching frequencies > 100 kHz and are able to achieve > 99% peak efficiency at
fPWM = 64 kHz.

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UltraCMOS® RF Switch for Broadband TV Systems

The PE43705 is a 50Ω, HaRP™ technology-enhanced, 7-bit, 31.75 dB, RF Digital Step Attenuator (DSA) that operates from 50 MHz to 8 GHz and is designed for use in 3G/4G wireless infrastructure and other high performance RF applications.

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ST Offers Replacement
for NXP's BLF177

The SD2931-10W is a gold metallized
N-channel MOSFET intended for use in 50V DC large signal applications up to 230 MHz. It is a pin-for-pin compatible replacement for the NXP BLF177.

Buy Now Learn More | 800.737.6937 | 630.208.2700