September 2013

50V GaN on SiC
HEMT for Avionics

The 0912GN-650V is Microsemi's newest highest power GaN device for Avionics & Radar, and the first of several new Microsemi 50V GaN on SiC HEMT transistors. It is internally-matched and features 650W of peak power (128μS and 10% duty cycle), with a minimum of 17 dB gain covering 960-1215 MHz.

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+29 dBm, 175–1400 MHz
Power Amp for T&M

The WPA0214N offers wide frequency band operation, from 175 to 1400 MHz, 50 ohm impedance, and 29 dBm P1dB. The WPA0214N is versatile for a range of applications, including VHF, UHF, Avionics, GPS, PA driver amplifiers, RF bench tests, and fixed wireless communication.

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Plastic-Packaged GaN on SiC

MACOM's new GaN on SiC in space-saving plastic has set the standard for pulsed L- and S-band applications, especially for reducing size, weight and power consumption (SWaP). The 3x6mm DFN packaged transistors are available in 15W, 50W, and 90W power levels and cover a variety of pulse conditions.

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Power Doubler GaN MMIC
for DOCSIS 3.1  

The TAT9988 is an ultra-linear GaN amplifier intended for output stage amplification in CATV infrastructure, and offers +60 dBmV output power. It operates from 50 to 1000 MHz and also supports 1200 MHz applications, in anticipation of DOCSIS® 3.1.

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Super-small GPS Receiver with Stacked Patch Antenna 

The A2235-H is Maestro’s next generation of active GPS modules, integrating a cost effective GPS receiver with an on-board patch antenna located above the device components for a small 16 x17 mm footprint.

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New Microsemi 650V NPT IGBTs

Microsemi has introduced both its 40A and 85A 1200V non-punch through (NPT) IGBTs, leveraging its leading-edge Power MOS 8™ technology and offering a dramatic reduction of twenty percent, or more, in total switching and conduction losses as compared to competitive solutions.

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