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Experience the advantages of SiC power modules from Microsemi:

  • High speed switching
  • Low switching losses
  • Low input capacitance
  • Low drive requirements
  • Low profile
  • Minimum parasitic inductance
  • Lower system cost
  • Increased reliability
Microsemi SiC MOSFET Power Modules
Part Number Topology BVDS (V) Id (A) @ Tc=80°C (A) RdsON (mR) @ Tj=25°C NTC Package
APT50MC120JCU2 PFC 1200 50 40 - SOT-227
APT100MC120JCU2 PFC 1200 100 20 - SOT-227
 
APTMC120HR11CT3G * T-Type 1200 20 110 Yes SP3F
APTMC120HRM40CT3G * T-Type 1200 50 40 Yes SP3F
 
APTMC60TL11CT3AG Three level inverter 600 20 110 - SP3F
APTMC60TLM55CT3AG Three level inverter 600 40 55 Yes SP3F
APTMC60TLM20CT3AG Three level inverter 600 100 20 Yes SP3F
APTMC60TLM14CAG Three level inverter 600 160 14 - SP6
 
APTMC120AM55CT1AG Phase Leg 1200 40 55 Yes SP1
APTMC120AM20CT1AG Phase Leg 1200 100 20 Yes SP1
APTMC120AM08CD3AG Phase Leg 1200 185 8 - D3

* Parts contain 600V Si IGBT along with 1200V SiC MOSFET.

 

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