NXP's new 65V LDMOS technology: designed for ease of use.

More power - Higher voltage enables higher power density, which helps reduce the number of transistors to combine.
Faster development time - With higher voltage, the output power can be increased while retaining a reasonable output impedance.
Design Reuse - This impedance benefit also ensures pin-compatibility with current 50V LDMOS transistors for better scalability.
Manageable current level - Higher voltage reduces the current losses in the system.
Wide safety margin - The higher breakdown voltage of 193 V improves ruggedness and allows for higher efficiency classes of operation.
Fixtures available to order
MRFX1K80H-27MHZFixture 27 MHz
MRFX1K80H-88MHZFixture 88-108 MHz
MRFX1K80H-230MFixture 230 MHz
The Five Benefits
of 65 V LDMOS >>
65 V Introduction >>65 V LDMOS
Design Reuse >>
MRFX series is designed
for ease of use
Learn more about NXP's 65 V
technology and the MRFX1K80
Demonstration of moving from a
1250 V device to the 1800 W MRFX1K80H using the same PCB

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