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48V GaN-on-Si RF Power Transistors from Nitronex

The family of devices is tested under CW* conditions and many come in plastic packaging, resulting in costs less than half of similar GaN in ceramic packaging. Operating the devices at 48V results in higher gain, higher power, higher efficiency and decreased thermal resistance.

Please contact us for any engineering support. Tuned or untuned evaluation boards, reference designs, or nonlinear modules are available upon request.

Nitronex 48V GaN-on-Si HEMTs
Part Number Frequency (MHz)
Gain
(dB)

Psat
(dBm)
PAE
(%)
Drain Efficiency (%) Rth, J-C
(°C/W)
Package
NPT2018 DC-4000 16 41 60 55 7 Plastic - 3x6 mm DFN
NPT2019 DC-3000 16 44 60 55 3.6 Plastic - 3x6 mm DFN
NPT2020 DC-3500 17 48 60 52 2.3 Ceramic - AC360B
NPT2021 DC-2200 17 47.5 60 55 1.9 Plastic - TO272
NPT2010 DC-2200 17 50.5 64 61 1.75 Ceramic - AC360B
NPT2022 DC-2200 19 50.5 64 60 1.7 Plastic - TO272

 

 

*Pulsed characteristics are available upon request

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