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August 20, 2015

NEW! 3.1-3.6 GHz, 80W GaN Power Amplifier from Qorvo
The TGA2814-CP is ideally suited for commercial and defense radar applications and features:

  • Pout: +49 dBm at PIN = +27 dBm
  • PAE: 50% pulsed
  • Power gain: 23 dB at PIN = +27 dBm
  • Bias: VD = 30V, IDQ = 200 mA, VG = -3V typical, pulsed (PW = 15 ms, DC = 30 %)
  • Package dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal management

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August 17, 2015

In the News: Freescale Expands RF Power Portfolio for Avionics Markets with Newest Airfast Products
Size, weight and power are critical parameters for avionics applications. The AFIC10275N is the industry’s first RF power integrated circuit covering the 978-1090 MHz band, and helps customers address these market criteria by enabling much smaller and lighter power amplifier (PA) transponders. The AFIC10275N integrates two amplification stages in a plastic package, delivering 250 W with 31 dB of gain and 64 percent drain efficiency. The device also embeds temperature and RF sensing capabilities, reducing the need for external components. The AFIC10275N is available as a solution with a reference circuit that reduces cycle time and development costs for customers. It is available in 14-lead and 14-lead gull wing plastic packages. Read more.

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August 13, 2015

Three New Glitch-less Digital Step Attenuators from Peregrine
The PE43711, PE43712 and PE43713 are 50Ω, HaRP™ technology-enhanced, 7-bit RF DSAs that support applications from 9 kHz to 6 GHz. They features glitch-less attenuation state transitions and support 1.8V control voltage and an extended operating temperature range to +105°C.

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August 10, 2015

NEW! 100W PIN Diode Reflective SP2T Switch from MACOM
The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity and is capable of handling 100W CW incident power at a base plate temperature of 85°C. Learn more.

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August 6, 2015

Selection Guide: RF & Microwave Solutions from DC to Beyond 100 GHz, from Analog Devices
From Antenna to Bits and Back … using a unique combination of design skills, systems understanding, and process technologies, Analog Devices offers the broadest portfolio of RF ICs, covering the entire RF signal chain from dc to beyond 90 GHz. With over 1000 high performance RF ICs, ADI offers a wide variety of RF function blocks, as well as highly integrated solutions for the communication, T&M instrumentation, and military markets. Download the selection guide.

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August 3, 2015

EDN Network Blog: Are You Bored with Your Board?
The performance required to deliver the next generation of satellite services for operators is stretching the capability of traditional materials used to fabricate space-grade PCBs. Ka-band, RF carriers, broadband ADCs/DACs, noisy switching regulators, low-voltage high-current FPGAs containing multi-gigabit, high-speed serial links, as well as I/O toggling around 1 GHz, all now reside on the same PCB separated by only a few centimeters. The choice of dielectric now has to optimize for RF, analog, and digital requirements… Read more.

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July 30, 2015

NEW! 27W Discrete Power GaN on SiC HEMT from Qorvo
The TGF2954 typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum PAE is 71.5%, making the TGF2953 appropriate for high efficiency applications, including marine radar and satellite, point-to-point and military communications. Learn more.

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July 27, 2015

NEW! 30W, 32V, 0.03-4 GHz GaN RF Transistor from Qorvo
Features of the TGF3021-SM include:

  • Output power (P3dB): 36.0W at 2 GHz
  • Linear gain: 19.3 dB at 2 GHz
  • Typical PAE3dB: 72.7% at 2 GHz
  • CW- and pulse-capable
  • 3 x 4 mm low thermal resistance package

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July 23, 2015

250W, Dual-stage LDMOS IC for Avionics from Freescale
The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It typically provides greater than 1W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain and is available in a low-cost, surface mount 32 lead 5x5 mm air-cavity ceramic QFN. It is ideally suited to support both radar and satellite communications as a driver or low power amplifier. Both RF ports have integrated DC blocking caps and are fully matched to 50 ohms, allowing for simple system integration. Learn more.

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July 20, 2015

NEW! 16-18.5 GHz, 1W GaAs Power Amplifier from TriQuint / Qorvo
The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It typically provides greater than 1W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain and is available in a low-cost, surface mount 32 lead 5x5 mm air-cavity ceramic QFN. It is ideally suited to support both radar and satellite communications as a driver or low power amplifier. Both RF ports have integrated DC blocking caps and are fully matched to 50 ohms, allowing for simple system integration. Learn more.

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July 16, 2015

Two New 100W, 28V, DC-3.5 GHz GaN RF Power Transistors from TriQuint / Qorvo
The TGF2929-FL and TGF2929-FS are 100W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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July 13, 2015

Video: Reduce Size, Reduce Weight, And Improve Performance? GaN Do.
Paul Beasly with M/A-COM Technology Solutions gives an overview of their high power GaN in space-saving plastic power transistors. These transistors are ideal for applications involving surveillance, air traffic control, marine radar, SATCOM, weather systems and more. Watch video.

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July 9, 2015

High Power SP4T 200W PIN Diode Switch from MACOM
The MASW-011040 SP4T switch is designed for military and civilian customers who require high CW and pulsed power operation for MIL-COM applications. It features low insertion loss and high linearity operating over the 50 MHz to 1 GHz frequency range. The MASW-011040 includes two high-power ports capable of handling up to 200 Watts CW. Learn more.

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July 6, 2015

S-Band 30W GaN Power Amplifier from Qorvo
The TGA2818-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.8-3.7 GHz, the TGA2818-SM provides greater than +45.5 dBm of saturated output power and greater than 18.0 dB of large-signal gain while achieving greater than 47 % power added efficiency. It is ideally suited for use in both commercial and military radar systems. Learn more.

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July 2, 2015

Qorvo GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is ideally suited for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.

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