Welcome to the Avionics & Radar Tech Hub, brought to you by Richardson RFPD.
Here you'll find the latest news on any new innovations and product releases.
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May 23, 2013
How Does One Become an Avionics Technician? Those who are interested in aviation and electronics may choose to pursue avionics careers, which involve aircraft navigation and communication radios, autopilots, weather radar systems, and other electronic devices. Today's digital aircraft depend upon sophisticated avionics systems as part of their design. Learn more.
Microsemi 3135GN-170M GaN RF Power Transistor Microsemi’s 3135GN-170M is an internally matched, common source, class AB, GaN on SiC transistor capable of providing 11 dB gain, 170 Watts of pulsed RF output power at 300µs pulse width, and 10% duty factor across the 3100 to 3500 MHz band. Learn more.
New! TriQuint T1G6003028-FL GaN RF Power Transistor The TriQuint T1G6003028-FL is a 30W (P3dB) discrete GaN on SiC HEMT, operating from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. Learn more.
New! Freescale MRFE6VP100HR5 RF Power LDMOS Transistors These RF power transistors are designed for both narrowband and broadband ISM, broadcast, and aerospace applications operating at frequencies from 1.8 to 2000 MHz. Learn more.
TriQuint T1G6001528-Q3 GaN RF Power Transistor The TriQuint T1G6001528-Q3 is a 18W (P3dB) discrete GaN on SiC HEMT. It operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. Learn more.
Nitronex NPT25015 GaN RF Power Transistor This Gallium Nitride 28V, 23W RF power transistor is built using the SIGANTIC® NRF1 process and features 23W P3dB peak envelope power (PEP), 1.5W linear power @ 2% EVM for single carrier, OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500-2700 MHz and is 100% RF tested. Learn more.
Microsemi 2731GN-200M GaN RF Power Transistor Microsemi’s 2731GN-200M is an internally matched, common source, class AB, GaN on SiC transistor capable of providing 12 dB gain, 200 Watts of pulsed RF output power at 200µs pulse width, and 10% duty factor across the 2700 to 3100 MHz band.
M/A-COM Technology Solutions MAGX-001214-125L00 GaN RF Power Transistor The MAGX-001214-125L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for pulsed L-band radar applications. Using state-of-the-art wafer fabrication processes, this high performance transistor provides high gain, efficiency, and ruggedness over a wide bandwidth for today's demanding applications. Learn more.