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May 21, 2015

High Power SP3T 100W Reflective Switch from MACOM
The MASW-011030 features low insertion loss and excellent linearity with low DC consumption. It is designed for military and civilian customers who require higher CW and pulsed power operation for radio applications. This device is capable of handling 100 Watts CW incident power at a base plate temperature of 85°C, delivered in a single 7mm HWFN 16-lead plastic package. Learn more.

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May 18, 2015

N-Channel Enhancement-Mode Lateral MOSFET from Freescale
The MMRF1004NR1 is designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications, it features:

  • P1dB: 10W
  • Gain: 15.5 dB
  • Pout: 1W
  • Test signal: W-CDMA
  • Efficiency: 15%
  • Supply voltage: 28VDC
  • Thermal resistance: 2.3 °C/W
  • Package type: TO-270-2

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May 15, 2015

In the News: Freescale Expands RF Power Portfolio for Avionics Markets with Newest Airfast Products
Size, weight and power are critical parameters for avionics applications. The AFIC10275N is the industry’s first RF power integrated circuit covering the 978-1090 MHz band, and helps customers address these market criteria by enabling much smaller and lighter power amplifier (PA) transponders. The AFIC10275N integrates two amplification stages in a plastic package, delivering 250 W with 31 dB of gain and 64 percent drain efficiency. The device also embeds temperature and RF sensing capabilities, reducing the need for external components. The AFIC10275N is available as a solution with a reference circuit that reduces cycle time and development costs for customers. It is available in 14-lead and 14-lead gull wing plastic packages. Read more.

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May 11, 2015

NEW! 3.1-3.6 GHz, 80W GaN Power Amplifier from TriQuint/Qorvo
The TGA2814-CP is ideally suited for commercial and defense radar applications and features:

  • Pout: +49 dBm at PIN = +27 dBm
  • PAE: 50% pulsed
  • Power gain: 23 dB at PIN = +27 dBm
  • Bias: VD = 30V, IDQ = 200 mA, VG = -3V typical, pulsed (PW = 15 ms, DC = 30 %)
  • Package dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal management

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May 7, 2015

SP3T 200W Switch from MACOM
The MASW-011041 operates from 50 MHz to 1 GHz and features low insertion loss and excellent linearity. It includes two high-power ports capable of handling up to 200W CW and one low-power port capable of handling up to 100W CW of incident power at a base plate temperature of +85°C. It is ideal for use on land mobile radio and MIL-COM applications that require higher CW and pulsed power operation. Learn more.

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May 4, 2015

RF Solutions for Aerospace and Defense from Freescale
The portfolio encompasses a range of high-power solutions that support a wide array of needs for military applications, including avionics, HF through L- and S-band radar, communications, missile guidance, electronic warfare, and identification, friend or foe (IFF). Learn more.

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April 30, 2015

Quad, 16-bit, High Dynamic Range DAC from ADI
The AD9144 digital-to-analog converter features a maximum sample rate of 2.8 GSPS that permits a multicarrier generation up to the Nyquist frequency. Additional key features include:

  • 1 GHz, ultra-wide complex signal bandwidth enables emerging wideband and multiband wireless applications
  • Advanced low spurious and distortion design techniques provide high quality synthesis of wideband signals from baseband to high intermediate frequencies
  • Programmable transmit enable function allows easy design balance between power consumption and wake-up time
  • Small package size with 12 mm × 12 mm footprint
  • Learn more…

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April 27, 2015

TriQuint's Packaged 2-6 GHz GaN LNA
The TGA2611 was the industry’s first GaN LNA, and now it is available in a 4x4mm QFN package. Covering 2–6 GHz, the TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. It is ideally suited for L- and S-band A&R systems. Learn more.

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April 23, 2015

NEW! 27 Watt Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2954 typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum PAE is 71.5%, making the TGF2953 appropriate for high efficiency applications, including marine radar and satellite, point-to-point and military communications. Learn more.

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April 20, 2015

7W Pulsed High Power Amplifier from MACOM
The MAAP-011022 is a 2.7 to 3.0 GHz high power balanced amplifier, designed for S-band aviation and weather radar applications. This device puts out 7W pulsed and is designed to operate at an 8% duty cycle. Learn more.

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April 16, 2015

L-Band 90W 2-Stage, Fully-Matched GaN Module for Radar Applications from MACOM
The MAMG-001214-090PSM is offered in a “True SMT” laminate package and is fully matched. Under pulsed conditions, it can deliver output power greater than 90W, with 30 dB typical associated gain and 60% typical power added efficiency. Evaluation board also available.

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April 13, 2015

NEW! 100W PIN Diode Reflective SP2T Switch from MACOM
The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity and is capable of handling 100W CW incident power at a base plate temperature of 85°C. Learn more.

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April 9, 2015

VIDEO: MACOM MAGX-000025-150000 GaN on SiC HEMT Power Transistor
Paul Beasly--Product Manager for High Power Radar products – discusses MACOM's 150W GaN high power transistor for radar applications. The device comes in a gemini package which enables the customer versatile solutions for multiple wideband applications. Watch video.

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April 6, 2015

20–1000 MHz, 500W Solid State High Power Amplifier from Empower
The 2175/BBS2E4ARR is suitable for multi-octave bandwidth, high-power continuous wave, modulated, and pulsed applications. It utilizes high-power LDMOS devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Learn more.

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April 3, 2015

High Power SP4T 200W PIN Diode Switch from MACOM
The MASW-011040 SP4T switch is designed for military and civilian customers who require high CW and pulsed power operation for MIL-COM applications. It features low insertion loss and high linearity operating over the 50 MHz to 1 GHz frequency range. The MASW-011040 includes two high-power ports capable of handling up to 200 Watts CW. Learn more.

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March 30, 2015

NEW! 650W, 960–1215 MHz GaN on SiC Pulsed Power HEMT from MACOM
The MAGX-000912-650L0x is a gold-metalized, matched gallium nitride on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications and featuring 20 dB typical gain, 62% efficiency at pulse width of 128 μs and 10% duty. Available in a standard flange package (MAGX-000912-650L00) and an earless flange package (MAGX-000912-650L0S).

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March 26, 2015

L-Band 90W GaN Module for Avionics Applications from MACOM
The MAMG-000912-090PSM is offered in a compact (14x24 mm2) “True SMT” package and is optimized for pulsed avionics applications in the 960–1215 MHz band. Additional features include:

  • GaN on SiC D-Mode Transistor Technology
  • Typical Bias: 50V, Class AB
  • Pulse width up to 600 μs
  • MTTF = 600 years (TJ < 200°C)
  • Evaluation board available
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March 23, 2015

NEW! TriQuint GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is ideally suited for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.

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March 19, 2015

RF GaN on SiC HEMTs with Package Options from TriQuint
The T1G4004532 (45W P3dB @ 3.3 GHz, offered in flanged and flangeless packages) and the T1G4020036 (240W P3dB @ at 2.9 GHz, offered in 4-lead flanged or an earless Gemini package) are ideally suited for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier, and jammer applications.

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March 16, 2015

Microsemi Amplifiers and Switches for Aerospace & Defense and Test & Measurement
Microsemi's multi-octave, wideband MMIC amplifiers and switches provide superb electrical performance. With frequency coverage as wide as DC to 22 GHz, these power amplifiers, driver amplifiers, low noise amplifiers and switches are excellent options for A&D and Test & Measurement applications. Learn more.

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March 12, 2015

Freescale’s RF Power GaN Transistor Delivers Breakthrough Wideband & Thermal Performance
The MMRF5014H is a 125W continuous wave GaN on SiC transistor that offers leading drain efficiency and operational bandwidth, making it ideal for wideband amplifiers in scientific equipment, as well as in military applications including communications, electronic warfare/jammers and radar systems. Learn more.

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March 9, 2015

NEW! 10 MHz-40 GHz UltraCMOS® SPDT RF Switch from Peregrine
The PE42524 is a HaRP™ technology-enhanced, wideband flip-chip switch that delivers high isolation performance, excellent linearity and low insertion loss, making it ideal for test and measurement (T&M), microwave backhaul, radar and military communications applications. Learn more.

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March 5, 2015

MIMO RF Transceiver from Lime Microsystems
Lime Microsystems’ first MIMO transceiver, the LMS7002M, is a fully-integrated, multiband, multi-standard, programmable RF transceiver that combines LNAs, driver amplifiers, mixers, filters, synthesizers, RX gain control, TX power control, and ADCs/DACs into a single 11.5x11.5 mm QFN-packaged product, requiring few external components. It covers 30 to 3800 MHz, with 0 dBm Pout from the driver amp, and 2.5 dB NF at 2 GHz at the RX input. Learn more.

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March 2, 2015

News: TriQuint Continues Department of Defense's Trusted Source Status
TriQuint has announced that it earned continued Trusted Source Category 1A accreditation through 2016 from the Department of Defense (DoD). TriQuint has focused on achieving several milestones as a supplier to the DoD, including recently completing the Defense Production Act Title III GaN on silicon carbide (SiC) program. TriQuint also applied the U.S. Air Force Research Laboratory's rigorous manufacturing readiness assessment (MRA) tool and criteria to its GaN production line, which develops high-frequency, high-power devices used within military radar, communications and electronic warfare programs. Read more…

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