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Tech Hub IconWelcome to the Avionics & Radar Tech Hub. Here you'll find the latest news on any
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July 30, 2015

NEW! 27W Discrete Power GaN on SiC HEMT from Qorvo
The TGF2954 typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum PAE is 71.5%, making the TGF2953 appropriate for high efficiency applications, including marine radar and satellite, point-to-point and military communications. Learn more.

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July 27, 2015

NEW! 30W, 32V, 0.03-4 GHz GaN RF Transistor from Qorvo
Features of the TGF3021-SM include:

  • Output power (P3dB): 36.0W at 2 GHz
  • Linear gain: 19.3 dB at 2 GHz
  • Typical PAE3dB: 72.7% at 2 GHz
  • CW- and pulse-capable
  • 3 x 4 mm low thermal resistance package

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July 23, 2015

250W, Dual-stage LDMOS IC for Avionics from Freescale
The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It typically provides greater than 1W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain and is available in a low-cost, surface mount 32 lead 5x5 mm air-cavity ceramic QFN. It is ideally suited to support both radar and satellite communications as a driver or low power amplifier. Both RF ports have integrated DC blocking caps and are fully matched to 50 ohms, allowing for simple system integration. Learn more.

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July 20, 2015

NEW! 16-18.5 GHz, 1W GaAs Power Amplifier from TriQuint / Qorvo
The TGA2621-SM is a packaged Ku-band PA fabricated on TriQuint’s TQPHT15 0.15 μm GaAs pHEMT process. It typically provides greater than 1W of saturated output power with greater than 23% PAE and greater than 24.5 dB of small signal gain and is available in a low-cost, surface mount 32 lead 5x5 mm air-cavity ceramic QFN. It is ideally suited to support both radar and satellite communications as a driver or low power amplifier. Both RF ports have integrated DC blocking caps and are fully matched to 50 ohms, allowing for simple system integration. Learn more.

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July 16, 2015

Two New 100W, 28V, DC-3.5 GHz GaN RF Power Transistors from TriQuint / Qorvo
The TGF2929-FL and TGF2929-FS are 100W discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint’s TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

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July 13, 2015

Video: Reduce Size, Reduce Weight, And Improve Performance? GaN Do.
Paul Beasly with M/A-COM Technology Solutions gives an overview of their high power GaN in space-saving plastic power transistors. These transistors are ideal for applications involving surveillance, air traffic control, marine radar, SATCOM, weather systems and more. Watch video.

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July 9, 2015

High Power SP4T 200W PIN Diode Switch from MACOM
The MASW-011040 SP4T switch is designed for military and civilian customers who require high CW and pulsed power operation for MIL-COM applications. It features low insertion loss and high linearity operating over the 50 MHz to 1 GHz frequency range. The MASW-011040 includes two high-power ports capable of handling up to 200 Watts CW. Learn more.

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July 6, 2015

S-Band 30W GaN Power Amplifier from Qorvo
The TGA2818-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.8-3.7 GHz, the TGA2818-SM provides greater than +45.5 dBm of saturated output power and greater than 18.0 dB of large-signal gain while achieving greater than 47 % power added efficiency. It is ideally suited for use in both commercial and military radar systems. Learn more.

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July 2, 2015

Qorvo GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is ideally suited for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.

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June 29, 201

S-Band 30W GaN Power Amplifier from Qorvo
The TGA2818-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.8-3.7 GHz, the TGA2818-SM provides greater than +45.5 dBm of saturated output power and greater than 18.0 dB of large-signal gain while achieving greater than 47 % power added efficiency. It is ideally suited for use in both commercial and military radar systems. Learn more.

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June 25, 2015

In the News: Rockwell Collins Sets Stage for ARINC Growth, Announces Avionics Contract
Rockwell Collins will pursue a series of initiatives that will increase capacity and expand the company’s ARINC global network throughout Europe, the Middle East and Africa (EMEA). The initiatives, aimed at proactively addressing growing air traffic and more data being generated by modern aircraft, include expanding the number of Very High Frequency (VHF) ground stations, adding VHF Digital Link Mode 2 (VDL Mode 2) frequency capacity in Europe and implementing a proprietary algorithm that will increase network capacity significantly over traditional VHF solutions... Read more.

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June 22, 2015

S-band, 80W GaN Power Amplifier for Radar Applications from Qorvo
The TGA2814-SM is a high-power, S-band amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). It covers 3.1–3.5 GHz and provides > 80W of saturated output power, 24 dB of large-signal gain, and achieves 55% power-added efficiency. Learn more.

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June 18, 2015

Richardson RFPD Announces Availability of Three GaN on SiC HEMTs from UMS
These internally-matched, Quasi-MMIC devices include a 15W L-band driver, a 50W C-band HPA, and a 200W L-band HPA. All are suitable for a variety of applications, including pulsed radar. Read more.

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June 15, 2015

NEW! 3.1-3.6 GHz, 100W GaN Power Amplifier for Radar Applications from Qorvo
Key features of the new TGA2813-CP include:

  • Pout: +50 dBm (at PIN = +27 dBm)
  • Power gain: 23 dB (at PIN = +27 dBm)
  • PAE: 51% CW
  • Bias: VD = 30V pulsed (PW = 15 ms, DC = 30%), IDQ = 300 mA, VG = -3V typical
  • Package dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal management

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June 11, 2015

NEW! S-Band 60W GaN Power Amplifier from Qorvo
The TGA2817-SM covers 2.9-3.5 GHz and provides > +48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54% PAE. The new device can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The TGA2817-SM is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is ideal for use in both commercial and military radar systems. Learn more.

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June 8, 2015

NEW! 13.4 to 15.5 GHz, 35W GaN Power Amplifier from Qorvo
The TGA2239-CP is a 3-stage, high-performance PA that offers > 30 dB small-signal gain with 34% PAE, allowing the system designer to achieve superior performance levels in a cost efficient manner. The new GaN PA minimizes the strain on the system-level cooling requirements, further reducing system operating costs. Superior electrical performance and thermal management make the TGA2239-CP ideal for supporting communications and radar applications in both commercial and military markets. Learn more.

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June 4, 2015

Article: Phased Array Radar At the Intersection of Military and Commercial Innovation
MACOM’s Glen Fields addresses how the erosion of cost barriers on both sides of the customer/ supplier equation will ultimately accelerate the pace of innovation and adoption for phased array radar into the future. Read article.

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June 1, 2015

Video: MACOM MAGX-000912-500L00 GaN on SiC 500W HEMT
Paul Beasly--Product Manager for High Power Radar products – discusses MACOM's 500W GaN RF power transistor optimized for pulsed avionics and radar applications, including Civilian Air Traffic Control (ATC), L-band secondary radar for IFF and Mode-S avionics. Watch video.

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