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Avionics & Radar
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April 23, 2015

NEW! 27 Watt Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2954 typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum PAE is 71.5%, making the TGF2953 appropriate for high efficiency applications, including marine radar and satellite, point-to-point and military communications. Learn more.


April 20, 2015

7W Pulsed High Power Amplifier from MACOM
The MAAP-011022 is a 2.7 to 3.0 GHz high power balanced amplifier, designed for S-band aviation and weather radar applications. This device puts out 7W pulsed and is designed to operate at an 8% duty cycle. Learn more.


April 16, 2015

L-Band 90W 2-Stage, Fully-Matched GaN Module for Radar Applications from MACOM
The MAMG-001214-090PSM is offered in a “True SMT” laminate package and is fully matched. Under pulsed conditions, it can deliver output power greater than 90W, with 30 dB typical associated gain and 60% typical power added efficiency. Evaluation board also available.


April 13, 2015

NEW! 100W PIN Diode Reflective SP2T Switch from MACOM
The MASW-011055 is a high power PIN diode SP2T switch in a common anode configuration, operating from 30 MHz to 3 GHz. It features low insertion loss and excellent linearity and is capable of handling 100W CW incident power at a base plate temperature of 85°C. Learn more.


April 9, 2015

VIDEO: MACOM MAGX-000025-150000 GaN on SiC HEMT Power Transistor
Paul Beasly--Product Manager for High Power Radar products – discusses MACOM's 150W GaN high power transistor for radar applications. The device comes in a gemini package which enables the customer versatile solutions for multiple wideband applications. Watch video.


April 6, 2015

20–1000 MHz, 500W Solid State High Power Amplifier from Empower
The 2175/BBS2E4ARR is suitable for multi-octave bandwidth, high-power continuous wave, modulated, and pulsed applications. It utilizes high-power LDMOS devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Learn more.


April 3, 2015

High Power SP4T 200W PIN Diode Switch from MACOM
The MASW-011040 SP4T switch is designed for military and civilian customers who require high CW and pulsed power operation for MIL-COM applications. It features low insertion loss and high linearity operating over the 50 MHz to 1 GHz frequency range. The MASW-011040 includes two high-power ports capable of handling up to 200 Watts CW. Learn more.


March 30, 2015

NEW! 650W, 960–1215 MHz GaN on SiC Pulsed Power HEMT from MACOM
The MAGX-000912-650L0x is a gold-metalized, matched gallium nitride on silicon carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications and featuring 20 dB typical gain, 62% efficiency at pulse width of 128 μs and 10% duty. Available in a standard flange package (MAGX-000912-650L00) and an earless flange package (MAGX-000912-650L0S).


March 26, 2015

L-Band 90W GaN Module for Avionics Applications from MACOM
The MAMG-000912-090PSM is offered in a compact (14x24 mm2) “True SMT” package and is optimized for pulsed avionics applications in the 960–1215 MHz band. Additional features include:

  • GaN on SiC D-Mode Transistor Technology
  • Typical Bias: 50V, Class AB
  • Pulse width up to 600 μs
  • MTTF = 600 years (TJ < 200°C)
  • Evaluation board available

March 23, 2015

NEW! TriQuint GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is ideally suited for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.


March 19, 2015

RF GaN on SiC HEMTs with Package Options from TriQuint
The T1G4004532 (45W P3dB @ 3.3 GHz, offered in flanged and flangeless packages) and the T1G4020036 (240W P3dB @ at 2.9 GHz, offered in 4-lead flanged or an earless Gemini package) are ideally suited for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier, and jammer applications.


March 16, 2015

Microsemi Amplifiers and Switches for Aerospace & Defense and Test & Measurement
Microsemi's multi-octave, wideband MMIC amplifiers and switches provide superb electrical performance. With frequency coverage as wide as DC to 22 GHz, these power amplifiers, driver amplifiers, low noise amplifiers and switches are excellent options for A&D and Test & Measurement applications. Learn more.


March 12, 2015

Freescale’s RF Power GaN Transistor Delivers Breakthrough Wideband & Thermal Performance
The MMRF5014H is a 125W continuous wave GaN on SiC transistor that offers leading drain efficiency and operational bandwidth, making it ideal for wideband amplifiers in scientific equipment, as well as in military applications including communications, electronic warfare/jammers and radar systems. Learn more.


March 9, 2015

NEW! 10 MHz-40 GHz UltraCMOS® SPDT RF Switch from Peregrine
The PE42524 is a HaRP™ technology-enhanced, wideband flip-chip switch that delivers high isolation performance, excellent linearity and low insertion loss, making it ideal for test and measurement (T&M), microwave backhaul, radar and military communications applications. Learn more.


March 5, 2015

MIMO RF Transceiver from Lime Microsystems
Lime Microsystems’ first MIMO transceiver, the LMS7002M, is a fully-integrated, multiband, multi-standard, programmable RF transceiver that combines LNAs, driver amplifiers, mixers, filters, synthesizers, RX gain control, TX power control, and ADCs/DACs into a single 11.5x11.5 mm QFN-packaged product, requiring few external components. It covers 30 to 3800 MHz, with 0 dBm Pout from the driver amp, and 2.5 dB NF at 2 GHz at the RX input. Learn more.


March 2, 2015

News: TriQuint Continues Department of Defense's Trusted Source Status
TriQuint has announced that it earned continued Trusted Source Category 1A accreditation through 2016 from the Department of Defense (DoD). TriQuint has focused on achieving several milestones as a supplier to the DoD, including recently completing the Defense Production Act Title III GaN on silicon carbide (SiC) program. TriQuint also applied the U.S. Air Force Research Laboratory's rigorous manufacturing readiness assessment (MRA) tool and criteria to its GaN production line, which develops high-frequency, high-power devices used within military radar, communications and electronic warfare programs. Read more…


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