Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

June 22, 2017
White Paper: Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process
This paper presents the design and test of a gate driver that is simple to integrate and matches the temperature requirements of future power modules. It presents the first integrated SiC CMOS gate driver capable of driving a power MOSFET. The gate driver pushes the functional temperature limits of gate drive technology to above 530 °C, a new high-water mark for extreme environment electronics. Download now.
 

June 19, 2017
In the News: Analog Devices' Small Isolated Gate Drivers Deliver Solutions for Next Generation Power Switch Technology
ADI recently announced its new small form factor isolated gate drivers that are designed for the higher switching speeds and system size constraints required by power switch technologies such as SiC and GaN... Read more .
 

June 14, 2017
In the News: Silicon Carbide Market Worth 617.4 Million USD by 2022
According to a new market research report, the silicon carbide (SiC) market size is expected to be valued at USD 617.4 Million by 2022, growing at a CAGR of 17.4% between 2017 and 2022. The major factors driving this market include the ability of SiC devices in the semiconductor to perform at high temperature and high voltage and power, increasing demand for motor drives, ability to reduce overall system size, and increasing application of SiC in radio frequency (RF) devices and cellular base station. Read more .
 

June 8, 2017
New flowPACK 1 SiC from Vincotech
Faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology, this 3xhalf-bridge module achieves needed efficiency at nominal and at partial loads. And its increased switching frequency and power density helps reduce overall system costs. Learn more .
 

June 8, 2017
Updated: Silicon Carbide Product Selection Guide from Richardson RFPD
Download our latest SiC Selection Guide, featuring our complete portfolio of SiC-focused products from industry-leading suppliers, including Power Integrations, Wolfspeed, Microsemi, Vincotech, Powerex, Semikron, Ohmite, and RECOM Power. Download (pdf) now.
 

June 1, 2017
In the News: Microsemi, ADI Partner on SiC-based Ref Design
The reference design provides a highly isolated SiC MOSFET dual-gate driver switch for evaluating SiC MOSFETs in a number of topologies. Read more .
 

May 30, 2017
In the News: Wolfspeed Achieves Industry’s First All- SiC 1.2kV power Module Reliability Benchmark for Harsh Environment Operation
New SiC power module enables highest reliability SiC devices for outdoor systems in renewable energy and transportation. Read more .
 

May 18, 2017
White Paper: Control Method of Impedance Network in SiC Power Converters for HEV/EV
This paper presents a control method for current-fed (CF) quasi-Z-source inverter (qZSI) SiC topology. The proposed method allows control of the impedance network and generation of the PWM signals for the SiC devices in the converter. Read more .
 

May 15, 2017
White Paper: Design of Single Phase SiC Bidirectional DC-AC Converter with Low-Cost PLL for Power Factor Correction
The paper presents the design stages of a single-phase Silicon Carbide bidirectional DC-AC converter. This includes the LCL filter design responsible to meet grid connection requirements. A 3kW laboratory prototype of the power converter is built employing a low-cost phase locked loop and its results are presented. The design of the low-cost phase locked loop and its implementation are depicted in some detail. Read more .
 

May 11, 2017
Max Efficiency for Charging Stations, SMPS, Welding and UPS Applications
Searching for an extremely fast, ultra-efficient power module for your charging station, SMPS, welding or UPS application? Vincotech's new flowPACK 1 SiC modules certainly fit the bill. Faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs, and perfect for charging stations that require soft-switching for LLC topology, the flowPACK 1 SiC achieves the efficiency you need at nominal and at partial loads. What's more, its increased switching frequency and power density reduce overall system costs. Learn more .
 

May 8, 2017
In the News: 1.2-kV SiC MOSFET Has Four Legs
So we know Wolfman Jack as a blabbering radio DJ, Wolfmother as a tolerable Led Zeppelin imitation, and Wolfson Microelectronics (now Cirrus Logic) as digital-audio specialists. Now add Wolfspeed (a Cree company) as a manufacturer of a silicon-carbide (SiC) FET with a spectacular Vds specification of 1200 V… Read more .
 

May 4, 2017
Video: High Temperature, Wide Bandgap Underhood Inverter
Learn how Wolfspeed uses its high temperature packaging expertise to enable silicon carbide and gallium nitride devices to be operated in an inverter in an underhood environment. Watch now.
 

May 1, 2017
In the News: 1.2kV SiC MOSFET from Wolfspeed
Called C3M0075120K, and available from Richardson RFPD, it comes in a four-lead TO-247-4 package – with a separate driver source explaining the fourth pin. The package has 8mm creepage distance between drain and source. Read more.
 

April 27, 2017
Resource Update: Silicon Carbide Technology Overview Brochure
Realize the benefits of silicon carbide technology with Richardson RFPD’s offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules. Read more.
 

April 24, 2017
White Paper: Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles
This paper demonstrates that the efficiency of the overall powertrain is significantly improved and the capacity of the battery can be remarkably reduced if the Si is replaced by SiC in the powertrain system. Read more.
 

April 13, 2017
In the News: Wolfspeed Launches a New Silicon Carbide MOSFET for EV Inverters
Wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) can greatly improve power conversion efficiency. Applied in an EV, the math is relatively simple. Increasing the efficient use of energy allows you to reduce the high costs of battery packs, shorten charging times or improve driving range. Read more.
 

April 11, 2017
White Paper: Ground Leakage Current Analysis and Suppression in a 60 kW 5-level T-type Transformerless SiC PV Inverter
This paper demonstrates that 5LT2 topology has advantages to suppress ground leakage current for PV inverter applications. Read more.
 

April 6, 2017
White Paper: Modelling the Temperature Dependences for Silicon Carbide BJTs
A simple semi-empirical DC compact model has been successfully developed for low voltage applications SiC BJTs. The model is based on a temperature-dependent SiC-SGP model. Studies over the temperature dependences for the SGP parameters have been performed. The SGP parameters have been extracted and some have been optimized over a wide temperature range and they have been compared with the measured data. The accuracy of the developed compact model based on these parameters has been proven by comparing it with the measured data as well. A fairly accurate performance at the required working conditions and correlation with the measured results of the SiC compact model has been achieved. Read more.
 

April 3, 2017
White Paper: Impact of Silicon Carbide Devices on the Dynamic Performance of Permanent Magnet Synchronous Motor Drive Systems for Electric Vehicles
This paper investigates the dynamic control performance features such as the fast response, the stability and the robustness of the drive system considering the characteristics of SiC MOSFETs. All the results of the SiC-drive system are compared to the silicon-(Si) insulated gate bipolar transistors (IGBTs) drive system counterpart, and the SiC-drive system manifests a higher dynamic performance than the Si-drive system. Read more.
 

March 23, 2017
In the News: Wolfspeed to Present Latest SiC MOSFET Technology at APEC 2017
Exhibiting at Booth #1110, Wolfspeed will demonstrate the newly designed low-inductance packaging for its SiC MOSFET family, as well as the new 900V 10mOhm MOSFET in its high-performance three-phase power evaluation unit, and the hardware for a 20kW two-level full-bridge LLC resonant converter using 1000V SiC MOSFETs in a new TO-247-4L package. Read more.
 

March 22, 2017
White Paper: Analysis of Power Loss and Improved Simulation Method of a High Frequency Dual-Buck Full-Bridge Inverter
Abstract: A high frequency dual-buck full-bridge inverter for small power renewable energy application is proposed in this paper. A switching frequency of 400 kHz is achieved with the adoption of the SiC power device… Read more.
 

March 15, 2017
White Paper: A Brief Overview of SiC MOSFET Failure Modes and Design Reliability
This paper briefly introduces various aspects which should be considered when implementing Silicon Carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) into a design. There is an increasing trend regarding the use of these devices in various applications due to their improved performance over conventional Silicon (Si) based devices. The failure modes of SiC MOSFETs are discussed, as well as the indicators which signal device degradation and failure. The impact of packing design on reliability and performance is also discussed along with a number of application related concepts which bring to light some of the issues regarding the use of SiC MOSFETs as a relatively young technology. Read more.
 

March 9, 2017
On-Demand Webinar: SiC Devices Meet High-Voltage Challenges for Solar
Solar installations are under pressure to reduce cost and improve performance: two opposing goals that are difficult for Si-based power conversion solutions to meet. The industry is trending towards higher voltages and distributed architecture, among other strategies, to meet the challenge. The latest generation SiC MOSFETs and diodes are ideally suited to reduce overall cost with higher voltage without giving up performance. View Webinar.
 

March 6, 2017
In the News: 1200V 75mOhm SiC FET in Low-Inductance Package
Wolfspeed, a Cree Company, has expanded its innovative C3M™ platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits. Read more.
 

February 23, 2017
In the News: Eval Board for 1.7kV SiC MOSFET
Wolfspeed has created an evaluation board for its 1.7kV SiC (silicon carbide) MOSFET, implementing a 48W power supply that can be fed from anywhere between 300Vdc and 1kVdc. Read more.
 

February 22, 2017
In the News: Prolonged Silicon Carbide Integrated Circuit Operation in Venus Surface Atmospheric Conditions
The prolonged operation of semiconductor integrated circuits (ICs) needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the
∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks) electrical operation of two silicon carbide (4H-SiC) junction field effect transistor (JFET) ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus. Read more.
 

February 15, 2017
In the News: Wolfspeed Extends 650/1200V Silicon Carbide Diode Specs
The 650V 12A C3D12065A and 16A C3D16065A Z-Rec SiC Schottky diodes are supplied in TO-220-2 packages, and are targeted at PFC boost stages in server power supplies, especially next-generation systems rated for 1100W, 1600W, 2000W, and 2400W with low-line or high-line inputs. They are also available as bare die. The 650V 2x15A C3D30065D Z-Rec diodes are supplied in TO-247-3 packages, and are best suited for rectification applications in 3-5kW power supplies. Also supplied in TO-247-3 packages, the 1200V 2x7.5A C4D15120D Z-Rec diodes are ideal for use in PV inverters and on- and off-board chargers. Read more.
 

February 2, 2017
White Paper: A Bidirectional DC-DC High Frequency Dual-Half Bridge Series Resonant Converter: Design, Simulation and Experimental Results
This paper looks at a bidirectional high frequency dual-half bridge series resonant converter (DHBSRC) designed for energy storage application. Two half-bridges are connected through LC resonant tank and HF transformer. Power flow of the converter is controlled using phase shifted gating scheme with 50% duty cycle. Operating principle, analysis and design of DHBSRC are presented in the report. This project also looks at the benefit of using new generation SiC MOSFETs that have many promising properties like larger bandgap and higher thermal conductivity, which predicts lower conduction losses and higher efficiency of converter. Download paper.
 

January 26, 2017
White Paper: Forward Current-voltage Characteristics Simulation of 4H-SiC Silicon Carbide Schottky Diode for Power Electronics
Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n≈1.1 at low temperature ∼300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode. Download paper.
 

January 23, 2017
In the News: Power Views – The Future of Electricity
From the shop floor to equipment performance, electrification is in expansion. While the benefits of electrification are already being felt, the development in the industrial world must be accelerated. Read more.
 

January 20, 2017
In the News: Wolfspeed Introduces New SiC MOSFET for EV Drive Trains
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design. Read more.
 

January 16, 2017
White Paper: Efficiency and Current Harmonics Comparison Between SiC and Si Based Inverters for Microgrids
In this paper, the power loss and current harmonics of both Si-IGBT and SiC-MOSFET based inverters are investigated and compared in low voltage (LV) microgrid applications, respectively. And the experimental results show that the application of SiC devices greatly increases the energy efficiency and improves the power quality in microgrid. Read more.
 

January 12, 2017
Available Now: Wolfspeed SiC 20 kW LLC Reference Design
The CRD-20DD09P-2 makes it easy to evaluate converter level efficiency and power density gains when using Wolfspeed’s new 1000 V, 65 mΩ SiC MOSFETs in a 4L-TO247 package in a full bridge resonant LLC circuit. It also can be used to evaluate the integration of a SiC-based isolated DC/DC stage in a larger multi-stage prototype system, like a fast DC charger for electric vehicles. Learn more.
 

January 9, 2017
New Microsemi 1200V SiC MOSFET
The APT80SM120B features low conduction losses at high temperature, low switching losses, high short circuit withstand ratings, low gate resistance, and patented SiC technology. Microsemi’s portfolio of 700V, 1200V and 1700V SiC MOSFETs improve system efficiency and reliability, and they offer numerous advantages over silicon superjunction MOSFETs.
Learn more
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