Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

October 5, 2015
White Paper: Impact of Silicon Carbide Device Technologies on Matrix Converter Design and Performance
The aim of this thesis is to understand how SiC devices are different from the conventional Si devices and the effect these differences have on the design and performance of a matrix converter. Learn more.

October 1, 2015
In the News: Silicon Carbide Market Is Anticipated To Grow To $4.49 Billion By 2020
The Global Silicon Carbide Market is expected to reach USD 4.49 billion by 2020, according to a new study by Grand View Research, Inc. Positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent is expected to drive silicon carbide demand. In addition, silicon carbide is an essential element in the manufacturing of semiconductors which is expected to witness significant growth over the next six years. Revitalizing automobile industry, especially in Asia Pacific, is also expected boost the demand for silicon carbide. Read more.

September 28, 2015
In the News: SiC Players are Pushing the SiC Technology Adoption Towards EV/HEV Industry
After several years of delays and questionings' phase, silicon carbide (SiC) technology confirmed its added-value, compared to existing silicon (Si) technologies. Yole Développement announces in its latest report GaN and SiC Devices for Power Electronics Applications (July 2015 edition) the penetration of silicon carbide (SiC), from low to high voltage (600 to 3300 V), in the following market segments: Power Factor Correction (PFC), photovoltaics, diodes with electric and hybrid electric vehicles (EV/HEV), wind, Uninterruptible Power Supplies (UPS) and motor drives. Read more.

September 24, 2015
In the News: Increasing Carrier Lifetimes for High-voltage Silicon Carbide
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs). Such devices are being developed to handle very high voltages beyond 10kV for electric power transmission and distribution… Read more.

September 21, 2015
NEW! 1700V SiC MOSFET from Wolfspeed™
The C2M1000170J features high blocking voltage with low RDS(on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability. Learn more.

September 15, 2015
In the News: SiC Comes of Age
In a recent report from France-based Yole Développement, Pierric Gueguen and colleagues outlined how SiC at last offers added-value compared to existing silicon technologies, following years of doubt and delays. Read more.

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