Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

July 27, 2015
Updated Silicon Carbide Technology Overview Available
Includes Richardson RPFD’s SiC offerings from franchised vendors, an overview of SiC test/evaluation products, a package style selection guide, and more. Download now.
 

July 23, 2015
650V & 1200V SiC/Si Hybrid NPT IGBTs in Stock!
Microsemi has added three new 650V non-punch through (NPT) IGBTs with integrated zero recovery, low leakage, SiC anti-parallel diodes, to its offering that previously included only 1200V models. Available in 45A and 70A current ratings, these leading edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz. Leveraging Power MOS 8™ technology, the 650V products offer the industry’s best loss performance – approximately 8% better than the closest competing IGBT. Learn More.
 

July 20, 2015
VIDEO: APEC 2015 interview with Yole Développement
In this video from APEC 2015, Pierric Gueguen, Ph.D, Yole’s Business Unit Manager for Power Electronics & Semiconductors, highlights the growth expectations for silicon carbide and discusses the characteristics that differentiate the applications that benefit from SiC vs. GaN on SiC technology. Watch now.
 

July 16, 2015
Quick Link: SiC Tech Hub New Products
The New Products page on the SiC Tech Hub offers a snapshot of a handful of the newest SiC devices offered by Richardson RFPD. Current featured products include a SiC MOSFET eval kit from Cree, SiC MOSFET power modules from Microsemi, and 1200V SiC MOSFET modules from Vincotech. Learn more.
 

July 13, 2015
Technical Article: Dynamic and Static Behavior of Packaged SiC MOSFETs in Paralleled Applications
This article from Cree deals with the parallel operation of packaged silicon carbide MOSFETs, including the parameters that affect the static and dynamic current-sharing behavior of the devices and the sensitivity of those parameters to the device junction temperature. Download paper.
 

July 9, 2015
In the News: The Next Opportunity for Utility PV Cost Reductions: 1,500 Volts DC
Excerpt: “As these regulatory barriers dissolve, manufacturers will begin to introduce 1,500 Vdc products in volume. We expect this to begin in mid-2015 and continue into 2016. The market will initially target large utility projects with central inverters, but we expect three-phase string inverters to follow soon after. This will be further enabled by the implementation of next-generation silicon carbide devices that allow for higher switching frequencies and greater power densities.” Read more.
 

July 6, 2015
Gate Driver In-Stock for Cree’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Cree’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.
 

July 2, 2015
Video: Cree Features All-SiC 50kW Solar Inverter at APEC 2015
Mrinal Das, Cree’s power module product marketing manager, highlights SiC’s performance, cost and physical characteristic benefits in this all-SiC 50kW solar inverter that is 1/3 the weight of a silicon solution. Watch video.
 

June 29, 2015
Webinar: Process Solutions for GaN and SiC Power Semiconductor Devices
The potential energy efficiency savings from the adoption of wide band gap power semiconductor devices based on GaN or SiC has led to significant research and development that is now beginning to be realized in commercially available devices. Wednesday, July 8th at 4pm (UK time). Learn more and register.
 

June 25, 2015
Technical Article: Computer Aided Design of Snubber Circuit for DC/DC Converter with SiC Power MOSFET Devices
This article from the Poznan University of Technology Academic Journals presents a computer-aided design of a snubber circuit for a DC/DC converter. A simulation model of the converter with parasitic circuit was designed, and three types of snubber circuits (C, RC, RCD) were investigated in simulation tests. Read the article.
 

June 22, 2015
White Paper: Simulation and Modeling of Silicon Carbide Devices
This doctoral thesis from Friedrich-Alexander University (Erlangen, Germany) aims to explain the mechanisms that control the channel mobility in SiC MOSFETs using numerical simulation and to develop a self-consistent simulation methodology for a description of their electrical behavior. Download pdf.
 

June 18, 2015
In the News: The Problem with Power
As power demands surge, electricity networks are under strain. Can SiC power electronics save the grid, asks Compound Semiconductor. Read article.
 

June 15, 2015
White Paper: High-Efficiency SiC Power Conversion Base Drivers for BJT and Performance Impacts on Series-Resonant Converters
This KTH Royal Institute of Technology doctoral thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented. Read more.
 

June 11, 2015
In the News: Silicon Carbide Market Share, Analysis, Report To 2020
HexaResearch.com has announced the addition of “Global Silicon Carbide Market Analysis And Segment Forecasts, 2012 – 2020″ Market Research report to their database. The SiC market is expected to reach over USD 4.50 billion by 2020 owing to high utility in steel and power industry, medical and healthcare, electronics and semiconductor, automotive, aerospace & aviation and military applications. Read more.
 

June 8, 2015
White Paper: Soft-Switching SiC Interleaved Boost Converter
Paper by M. R. Ahmed, G. Calderon-Lopez, F. Bryan, R. Todd and A. J. Forsyth, School of Electrical and Electronic Engineering, Power Conversion Group, The University of Manchester – and presented at APEC 2015 – confirms the viability of soft switching techniques for SiC converters and suggests that there is significant potential for further increases in switching frequencies. Read more.
 

June 4, 2015
Presentation: Silicon Carbide’s Impact on EV/HEV Chargers and Inverters
Paul Kierstead, Cree’s Director of Marketing, SiC Power Products, gave this presentation as part of Yole Développement’s Power Electronics Market Briefing ("How are hybrid and electric vehicles going to reshape the overall power electronics industry?") at PCIM Europe 2015. Mr. Kierstead’s presentation is now available in pdf format. Please click here to download.
 

June 1, 2015
Phase-leg SiC MOSFET Power Module from Microsemi
The APTMC120AM25CT3AG offers outstanding performance at high frequency operation, direct mounting to heat sink, and low junction to case thermal resistance. Key features include Vdss=1200V, Rds(on) = 25 mOhm max @ Tj = 25 °C, and Id = 105A @ Tc = 25 °C. Learn more.
 

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