Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

April 20, 2015
In the News: Cree's SiC Technology Reduces Solar Power Inverter Size, Weight and Cost
Cree says it has demonstrated that its SiC MOSFET and diode technologies enable what are claimed to be previously unattainable levels of power density in string solar inverter products, yielding ultra-high efficiencies (greater than 99.1% at peak) at one-fifth the average size and weight of existing silicon-based inverter units. Read more.

April 16, 2015
White Paper: 10kV SiC-based Isolated DC-DC Converter for Medium Voltage-Connected Solid-State Transformers
This IEEE article presented at APEC 2015 utilizes SiC and solid-state transformer technology for designing a 25kW/50 kHz prototype based on 10kV SiC devices. Learn More.

April 13, 2015
VIDEO: APEC 2015 interview with Yole Développement
In this video from APEC 2015, Pierric Gueguen, Ph.D, Yole’s Business Unit Manager for Power Electronics & Semiconductors, highlights the growth expectations for silicon carbide and discusses the characteristics that differentiate the applications that benefit from SiC vs. GaN on SiC technology. Watch now.

April 9, 2015
Technical Article: Dynamic and Static Behavior of Packaged SiC MOSFETs in Paralleled Applications
This article from Cree deals with the parallel operation of packaged silicon carbide MOSFETs, including the parameters that affect the static and dynamic current-sharing behavior of the devices and the sensitivity of those parameters to the device junction temperature. Download paper.

April 6, 2015
In the News: Strategy Is Key Differentiator as More Efficient GaN, SiC Power Electronics Enter Market
The use of silicon carbide as a semiconductor for mechanical and electrical sensor devices is showing promise for improved operations and safety in harsh working environments, according to new research from Griffith University. Read article.While carmakers could succeed by playing the role of an "integrator," GaN or SiC developers could be a "technology disruptor" offering core technology expertise, says Lux Research… Read article.

April 3, 2015
In the News: Study Shows Benefits of SiC for Sensors in Harsh Environments
The use of silicon carbide as a semiconductor for mechanical and electrical sensor devices is showing promise for improved operations and safety in harsh working environments, according to new research from Griffith University. Read article.

March 30, 2015
Technical Article: SiC and GaN Semiconductors in Modules for Higher Efficiency
This Power Electronics Europe article by Jerry Moudilos, Field Application Engineer for Vincotech, discusses the advantages and disadvantages of using modules with SiC and GaN semiconductors in high efficiency and compact light weight applications. Read article.

March 26, 2015
NEW VIDEO: Cree Features All-SiC 50kW Solar Inverter at APEC 2015
Mrinal Das, Cree’s power module product marketing manager, highlights SiC’s performance, cost and physical characteristic benefits in this all-SiC 50kW solar inverter that is 1/3 the weight of a silicon solution. Watch video.

March 23, 2015
In the News: Solantro Looks to Move New High-frequency Designs and New Materials like GaN and SiC into Solar Inverters
Solantro CEO believes that horizontal integration in inverters will yield more efficient designs that leverage the scalability of silicon. This will reduce cost in solar and storage applications, while moving toward new power semiconductor materials such as gallium nitride (GaN) or silicon carbide (SiC)… Read more.

March 19, 2015
UPDATED SELECTION GUIDE: Featuring Richardson RFPD’s SiC Technology Portfolio
The March 2015 version of our SiC Product Selection Guide includes a broad range of products from industry-leading suppliers Cree, Microsemi, Powerex and Vincotech. Download now.

March 16, 2015
Cree Exhibiting and Presenting SiC-based Technology at APEC 2015
Exhibiting in booth #1417 at APEC (March 15-19 in Charlotte, NC), Cree will have several onsite demonstrations designed to illustrate the broad range of power levels (60W) that SiC can support. Demos include a SiC-based LED power supply (<500W); a ZVS resonant converter targeted for telecom applications (1–10kW); a 25kW boost converter for solar applications that features a compact, new 31mm Cree module (10–25kW); and a power stack that demonstrates how Cree's 1.2kV, 300A SiC modules can revitalize older IGBT-module-based systems (100kW–1MW). Read more.

March 12, 2015
Download Richardson RFPD’s SiC Technology Overview Brochure
Our Silicon Carbide Technology Overview brochure highlights the benefits of SiC vs. Si technology in power conversion applications, along with products and package types available from industry-leading suppliers Cree, Microsemi, Powerex and Vincotech. In addition, learn about the latest test/evaluation products, including gate driver modules, reference designs and evaluation boards. Download now.

March 9, 2015
In the News: Power Semiconductor Device Market Grew in 2014 after Two Years of Stagnation
Excerpt: “The advance of new wide-bandgap materials is also reshaping the power electronics industry. Compared with silicon devices, SiC- and GaN-based devices are intended for high-voltage (especially SiC), high-frequency and high-temperature applications due to their advanced performance. SiC technology is more mature than GaN, so industry segments such as rail traction and PV inverters have already adopted systems based on WBG devices. The introduction of SiC into other high-voltage segments - such as wind and high-voltage direct current grids - is also inevitable, says Yole. But the big boost for these new markets should arrive with the implementation of SiC devices in the traction systems of electric cars.” Read full article.

March 5, 2015
Three 1200V SiC MOSFETs in Three Different Package Styles from Microsemi
The MOSFETs are built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand. Package styles include SOT-227, TO-247 and D3PAK. Read more.

March 2, 2015
In the News: 3.3 kV/1500A Power Modules for the World’s First All-SiC Traction Inverter
This article from the Japanese Journal of Applied Physics highlights the potential of SiC power devices in significantly improving the performance of high-power systems. The switching loss of the all-SiC traction inverter system is approximately 55% less than that of a conventional inverter system incorporating Si modules. Learn more.

See archived posts.

Your Global Source for RF, Wireless, Energy & Power Technologies    |    800.737.6937    |    630.262.6800
Follow us on Twitter See us on LinkedIn View our videos on YouTube Visit us on Facebook Subscribe Now!