Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.
July 21, 2014
News: New York Power Electronics Manufacturing Consortium Highlights
Use of SiC
A new consortium in which the state of New York will partner with over 100 other companies, universities and public authorities will focus on the development and manufacture of the next generation of Silicon Carbide and other materials used on semiconductors. All NY-PEMC partner companies will have access to state-of-the-art 6” SiC wafers developed and produced there and a baseline process flow where they can make their own enhancements in preparation for high volume, cost effective manufacturing. Learn more.

July 24, 2014
Video: High-performance SiC-based Plug-in Hybrid Electric Vehicle
Battery Charger
This video highlights Cree’s participation with Arkansas Power Electronics International, Toyota, Oak Ridge National Labs, the University of Arkansas and government agency ARPA-E on a SiC-based battery charger featuring power capability of 6kW, 95%+ efficiency and ultra-high power density of 5kW/L and 3.8kW/kg. The new Level 2 isolated on-board vehicular battery charger uses SiC power devices for application in electric vehicles and plug-in hybrid electric vehicles. View here.

July 17, 2014
Full SiC & Hybrid SiC IGBTs from Powerex Feature Low Profile Design
Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high-performance, all-SiC modules—or with high-frequency silicon IGBTs into hybrid Si/SiC modules. The new low-profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications. Learn more.

July 14, 2014
Cree Dual Channel SiC MOSFET Driver Available from Stock
The CGD15HB62P half bridge gate driver is designed for use with 1200V SiC MOSFET modules and has been optimized for use with Cree’s CAS300M12BM2 62 mm module. Learn more.

July 10, 2014
New 2nd-Generation Z-FET® from Cree!
The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package. Benefits include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability. Learn more.

July 7, 2014
This week at SEMICON West—Wide-Bandgap Power Electronics: A Path Toward CO2 Emission Decrease
Jean Christophe-Eloy, president and CEO of Yole Développement, will chair a session on July 10th to discuss the positive impact of CO2 emissions based on the power conversion efficiency of systems using SiC and GaN. Yole estimates wide bandgap (WBG) devices are expected to generate business exceeding $1 billion USD by 2020. Learn more.

July 3, 2014
New! 1200V, 40A SiC MOSFET from Microsemi
The APT40SM120B is part of a new family of SiC MOSFETs developed using Microsemi’s in-house SiC fabrication capabilities. The 80mΩ device is offered in a TO-247 package and features best-in-class RDS(on) v. temperature, as well as ultra-low gate resistance for minimizing switching energy loss. Learn more.

July 2, 2014
Download Our Latest SiC Products Brochure!
New Silicon Carbide Technology selection guide highlighting our offering of SiC Schottky Diodes, MOSFETs and SiC modules from Cree, Microsemi, Powerex and Vincotech. Learn more.

June 26, 2014
Blog Post: Feeling “SiC”
Adoption of silicon carbide (SiC) technology across the power electronics industry remains in its early stages. But the buzz can certainly not be denied. Read more.

June 25, 2014
New Report: SiC Market Expected to Reach USD 4.49 Billion by 2020
According to a new study by Grand View Research, Inc., positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent, is expected to drive silicon carbide demand. In addition, SiC is an essential element in the manufacturing of semiconductors, which is expected to witness significant growth over the next six years. Read more.

June 19, 2014
Effect of Barrier Metal Based on Titaniumor Molybdenum in
Characteristics of 4H-SiC Schottky Diodes
Technical paper featured in Sensors & Transducers, Vol. 27, May 2014 issue, summarizes a study looking at the  electrical properties and the stability of the devices and correlating them to the fabrication processes and to the metal/semiconductor interfaces. Molybdenum-based contacts show better behavior in forward polarization when compared to the Titaniumor-based Schottky contacts, with ideality factors close to the unity even after the annealing process. However, Mo-based contacts show leakage currents higher than that measured on the more optimized Ti-based Schottky. Read more.

June 16, 2014
Silicon Carbide in Automotive–Power Electronics Europe May 2014
Some of the first markets to use SiC include the server, industrial, telecom, lighting, and induction heating power supply markets. Since then, SiC has also penetrated the solar, UPS inverter, drives, and avionics markets. In this article featured in the May 2014 issue of Power Electronics Europe, Cree’s business development and programs manager, Jeff Casady, writes about how SiC power components have begun to permeate automotive applications such as on-board and off-board chargers, and on-board auxiliary power supplies in electric vehicles (EVs) and hybrid electric vehicles (HEVs). Read more.

June 12, 2014
News Article: Efficiency Improvement in Booster Power Modules
with SiC Components
Two factors are shaping the development of advanced power conversion systems - increasingly stringent standards for energy efficiency, especially in solar and UPS applications, and the need to decrease the overall system’s costs for the customer. In this article, Vincotech Product Marketing Manager Dr. Evangelos Theodossiu compares the efficiency of booster power modules to see how pure silicon components stack up against silicon carbide components. It also discusses the benefits, drawbacks and challenges of using SiC technology... Read more.

June 9, 2014
News Article: Fraunhofer ISE uses Cree 10kV SiC Devices
in Experimental DC-DC
Researchers at the Fraunhofer Institute for Solar Energy Systems ISE have now successfully implemented silicon carbide (SiC) devices with a blocking voltage of 10kV in a DC-DC converter for medium-voltage applications. This demonstrator can be used in renewable power plants which are gaining significance for the energy grid of the future... Read more.

June 5, 2014
Microsemi 1200V, 143A, 17mΩ SiC Module in Stock
Microsemi's APTMC120AM20CT1AG full-silicon carbide phase leg power module offers very low stray inductance and outstanding performance at high frequency operation. Ideal applications include welding converters, switched mode power supplies, uninterruptible power supplies and motor controls. Learn more.

June 3, 2014
News Article: Boulder Wind Power Discovers the Benefits of SiC FETs
BWP’s new DC Generation System™ provides an up to 2% increase in efficiency through the use of next-generation SiC MOSFET active rectifiers. Learn more.

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