Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

March 2, 2015
In the News: 3.3 kV/1500A Power Modules for the World’s First All-SiC Traction Inverter
This article from the Japanese Journal of Applied Physics highlights the potential of SiC power devices in significantly improving the performance of high-power systems. The switching loss of the all-SiC traction inverter system is approximately 55% less than that of a conventional inverter system incorporating Si modules. Learn more.

February 26, 2015
Enter to Win: New SiC MOSFET Evaluation Kit from Cree
Richardson RFPD is giving away five Cree KIT8020CRD8FF1217P-1 evaluation kits! The drawing will be held on March 18, 2015, following APEC 2015 in Charlotte, NC. Learn more.

February 23, 2015
Gate Driver In-Stock for Cree’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Cree’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.

February 19, 2015
Presentation: Cree PV Inverter Tops the 1kW/kg Mark with All-SiC Design
Download the presentation given at the 2014 Power Fortronic show in Bologna by Cree’s Alejandro Esquivel, outlining the design and performance of an all-silicon carbide solar inverter designed, built and tested by Cree. The inverter uses Cree’s state-of-the-art SiC MOSFETs and Schottky diodes in the boost, inverter and auxiliary power supply circuits. SiC device technology provides the quantum improvement in efficiency and switching frequency, allowing 50kW of three-phase power output in the size of today’s 25kW silicon based inverter. The resulting 1kW/kg sets an industry benchmark for power density. Download presentation.

February 16, 2015
New Gate Driver In-stock for Cree’s 1200V SiC Module
Now available from Richardson RFPD, the PT62SCMD12 is a dual 1200V SiC MOSFET driver designed for driving Cree’s CAS300M12BM2 62mm, 1200V SiC power module. Learn more.

February 12, 2015
Article: Theoretical Analysis of Short-circuit Capability of SiC power MOSFETs
This article from the Japanese Journal of Applied Physics presents an analytical formula for the short-circuit capability of a SiC power device and its dependence on the ambient temperature and the thickness of the n- drift region, on the basis of the thermal diffusion equation. The formulae used for Si devices are not directly applicable, since the heat generation region is considerably smaller in SiC devices. Read More.

February 9, 2015
In the News: SiC and GaN Soon Available for Integrators
Silicon carbide and gallium nitride wide band gap (WBG) technologies are almost ready to be used by power electronics integrators, said a report published by Yole Développement. Read More.

February 5, 2015
In the News: Cree’s 650V SiC Schottky Diodes Available from Stock at Richardson RFPD
Semiconductor Today reports on Cree’s expansion of its silicon carbide Schottky diode portfolio with the addition of four new 650V diodes. Among the features of the new 6A, 8A and 10A devices are TO-252-2 (DPAK) packages, which are a smaller footprint than many of the comparable diodes currently on the market. Read more or Buy Now from Richardson RFPD.

February 2, 2015
In the News: Toyota Starts Road Trials of EVs with Silicon Carbide Devices
Drives & Controls Magazine reports that Toyota is starting to road-test two electric motors in Japan that are using SiC power semiconductors in the motor controls and voltage converters. According to the article, SiC devices could lead to significant efficiency improvements in hybrids and other vehicles with electric powertrains. Read more.

January 29, 2015
Thesis: Analyzing and Testing of Silicon Carbide Components for Down Hole Oil Applications
Norwegian University of Science and Technology master thesis analyzes the use of SiC in high temperature down hole oil exploitation activities. The inherent properties of wide bandwidth, high breakdown electrical field and high thermal conductivity give commercially-available SiC power devices up to 150°C operational junction temperature. This study produced a review of Cree’s 1200V, 50A six-pack module in a laboratory environment. Learn more.

January 26, 2015
1200V SiC MOSFET Rated at 80 milliohms in a TO-247 package
The APT40SM120B is part of a new family of SiC MOSFETs developed using Microsemi’s in-house SiC fabrication capabilities. The 80mΩ device is offered in a TO-247 package and features best-in-class RDS(on) v. temperature, as well as ultra-low gate resistance for minimizing switching energy loss. Learn more.

January 22, 2015
White Paper: 5m x 5m AC-to-DC Converter Study Highlights the Benefits of SiC Diodes and MOSFETs
Published in the December 2014 issue of the Journal of Semiconductor Technology and Science, this paper reviews the performance of a SiC-based, single chip programmable AC-to-DC power converter. The advantages of the proposed circuit are its ability to connect high voltage AC supply directly to the system board, a single integrated circuit package having very small footprint, the much longer life cycle of the circuit due to its operation under reduced stress conditions, and the very high power efficiency of the converter circuit. Learn more.

January 20, 2015
Cree’s New 1.2kV, 120A Half-Bridge Module for 30-60kW Power Conversion Systems
The CAS120M12BM2 – utilizing Cree’s C2M MOSFET technology - offers switching losses 14x lower than similarly-rated IGBT4 modules. Its industry standard 62mm package facilitates easy design-in. The module is in stock at Richardson RFPD at a price savings of more than 20% compared with Cree’s previously released high reliability, 100A module. Learn more.

January 16, 2015
SiC Switches in Booster Power Modules for Highly Efficient, High-frequency Operation in Solar Inverters
This presentation from Vincotech outlines the use of silicon carbide switches to improve a boost converter’s efficiency. Included is simulation data using Vincotech’s flowBoost 0 modules. Download a pdf of the presentation.

January 12, 2015
VIDEO: New Video Highlights the Benefits of Cree SiC MOSFETs
This short video highlights the superior performance of Cree MOSFETs and their ability to produce smaller, cooler and less expensive systems. Watch now.

January 8, 2015
Download Richardson RFPD’s SiC Technology Overview Brochure
Our Silicon Carbide Technology Overview brochure highlights the benefits of SiC vs. Si technology in power conversion applications, along with products and package types available from industry-leading suppliers Cree, Microsemi, Powerex and Vincotech. In addition, learn about the latest test/evaluation products, including gate driver modules, reference designs and evaluation boards. Download now.

January 5, 2015
New 1.2kV, 80mΩ All-SiC Six-pack (three-phase) Module and Associated Six-channel Gate Driver from Cree
Now available from Richardson RFPD, the CCS020M12CM2 module includes C2M™ MOSFETs and Z-Rec™ diodes and features ultra-low loss, high-frequency operation, zero reverse recovery current from the diodes, zero turn-off tail current from the MOSFETs, fail-safe operation, ease of paralleling, and a copper baseplate and aluminum nitride insulator. The associated CGD15FB45P six-channel gate driver is an evaluation fixture for Cree’s 1200V “CM2” series six-pack power modules.

December 22, 2014
In the News: New Electric Vehicle Technology Packs More Punch in Smaller Package
Using 3-D printing and novel semiconductors, researchers at the Department of Energy's Oak Ridge National Laboratory have created a power inverter that could make electric vehicles lighter, more powerful and more efficient. At the core of this development is wide bandgap material made of silicon carbide with qualities superior to standard semiconductor materials. Learn more.

Happy Holidays from everyone at Richardson RFPD / Arrow RF & Power!


December 18, 2014
Download Richardson RFPD’s SiC Selection Guide
With new products being added weekly, our SiC product selection guide in .pdf format offers a comprehensive listing of the SiC discrete and modules available from innovative manufacturers Cree, Microsemi, Powerex and Vincotech. Easily access .pdf datasheets, pricing and inventory information from a single document. Learn more.

December 15, 2014
Vincotech 1200V SiC MOSFET Modules in Stock
Choose from a selection of 1200V, 80mOhm, 27mOhm or 40mOhm in Vincotech’s flow0 package with 12mm press-fit pins and phase change material. The modules are engineered for highly efficient, three-phase solar inverters ranging up to 30kW. Learn more.

December 11, 2014
Microsemi 650V & 1200V NPT IGBTs are Cost-effective Choice over MOSFETs
Richardson RFPD is stocking three 650V and three 1200V non-punch through IGBTs designed to replace more costly MOSFETs in industrial applications. The devices feature low saturation voltage, low tail current, short-circuit withstand ratings, high frequency switching, and ultra-low leakage current. See the complete lineup of devices.

December 8, 2014
In the News: Researchers Design Circuits that Function at Temperatures Over 350 °C
This Power Electronics article features the work of researchers at the University of Arkansas who have designed integrated circuits capable of withstanding temperatures greater than 350 degrees Celsius (660 degrees Fahrenheit). The researchers worked with silicon carbide based on the material’s abilities to withstand extremely high voltage and be a good thermal conductor, meaning it can operate at high temperatures without requiring extra equipment to remove heat. Read more.

December 4, 2014
In the News: New Inverter for Lighter, More Powerful Electric Vehicles
Researchers at the U.S. Department of Energy's Oak Ridge National Laboratory have created a power inverter that could make electric vehicles lighter, more powerful and more efficient, according to an article on The new inverter achieves much higher power density with a significant reduction in weight and volume. At the core of this development is wide bandgap material made of silicon carbide with qualities superior to standard semiconductor materials… Read more.

December 1, 2014
New Silicon Carbide MOSFET Evaluation Kit from Cree
The KIT8020CRD8FF1217P-1 multi-function evaluation board is easily configurable for different topologies with SiC MOSFETs and SiC diodes and includes:
  • Two C2M0280120D Cree SiC 1200V, 80mΩ, TO-247-3 MOSFETs
  • Two C4D20120D Cree SiC 1200V, 20A, TO-247-3 Schottky diodes
  • Evaluation board with an Avago gate driver
  • A compatible heat sink
  • All mounting hardware
  • User Manual
Learn more.

November 26, 2014
Happy Thanksgiving Holiday to all our American friends


November 24, 2014
Three New 1200V SiC MOSFETs in Three Different Package Styles from Microsemi
The new MOSFETs are built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand. Package styles include SOT-227, TO-247 and D3PAK. Read more.

November 21, 2014
In the News: Silicon Carbide Key Ingredient for Success of Space Mission
Airbus Defence and Space, the world’s second largest space company, turned to silicon carbide as the key material for development of a more precise optical imaging system to identify the landing site for its 100-kg lander. SiC’s “extreme thermal stability at low temperature guarantees the unrivalled resolution of the images and also means that an active thermal control system was not necessary, so energy produced by solar arrays could be used for [the lander’s] other vital functions.” Read more.

November 21, 2014
New Gate Driver In-Stock for Cree’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Cree’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.

November 13, 2014
Expanded Family of 650V SiC Diodes from Cree
The new devices represent an expansion to Cree’s family of Z-Rec™ 650V Junction Barrier Schottky (JBS) diodes that previously included 10A, 8A, 6A and 4A 650V diodes in TO-220-2 packages. The entire line of JBS diodes offer zero reverse recovery current, zero forward recovery voltage, high-frequency operation, temperature-independent switching behavior, and extremely fast switching. They are ideally suited for switch mode power supply, power factor correction, solar inverter, motor drive, and electrical vehicle charger applications. Learn more.

November 10, 2014
Report: Asia-Pacific to Have Highest Growth Rate in SiC Power Semiconductor Applications
The Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 Million by 2020, growing at a CAGR of 42.03% from 2014 to 2020, according to a new report from Markets and Markets. The power sector in APAC is expected to create huge demand for silicon carbide based semiconductor devices. Many power and smart grid projects are expected from Asian countries such as China, India, and Thailand. The implementation of solar power project in countries such as China and Japan will further boost the demand of silicon carbide based semiconductor. Learn more.

November 6, 2014
In the News: U.S Navy Turns to Silicon Carbide to Manage Shipboard Power Requirements
National Defense article discusses how the Office of Naval Research and a nine-university research and development consortium have developed 3-megawatt silicon carbide power converters that perform at higher voltages and frequencies than the legacy equipment, as well as reducing volume by 60 percent and weight by 30 percent. Learn more.

November 3, 2014
New Gate Driver In-stock for Cree’s 1200V SiC Module
Now available from Richardson RFPD, the PT62SCMD12 is a dual 1200V SiC MOSFET driver designed for driving Cree’s CAS300M12BM2 62mm, 1200V SiC power module. Learn more.

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