Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

December 18, 2014
Download Richardson RFPD’s SiC Selection Guide
With new products being added weekly, our SiC product selection guide in .pdf format offers a comprehensive listing of the SiC discrete and modules available from innovative manufacturers Cree, Microsemi, Powerex and Vincotech. Easily access .pdf datasheets, pricing and inventory information from a single document. Learn more.

December 15, 2014
Vincotech 1200V SiC MOSFET Modules in Stock
Choose from a selection of 1200V, 80mOhm, 27mOhm or 40mOhm in Vincotech’s flow0 package with 12mm press-fit pins and phase change material. The modules are engineered for highly efficient, three-phase solar inverters ranging up to 30kW. Learn more.

December 11, 2014
Microsemi 650V & 1200V NPT IGBTs are Cost-effective Choice over MOSFETs
Richardson RFPD is stocking three 650V and three 1200V non-punch through IGBTs designed to replace more costly MOSFETs in industrial applications. The devices feature low saturation voltage, low tail current, short-circuit withstand ratings, high frequency switching, and ultra-low leakage current. See the complete lineup of devices.

December 8, 2014
In the News: Researchers Design Circuits that Function at Temperatures Over 350 °C
This Power Electronics article features the work of researchers at the University of Arkansas who have designed integrated circuits capable of withstanding temperatures greater than 350 degrees Celsius (660 degrees Fahrenheit). The researchers worked with silicon carbide based on the material’s abilities to withstand extremely high voltage and be a good thermal conductor, meaning it can operate at high temperatures without requiring extra equipment to remove heat. Read more.

December 4, 2014
In the News: New Inverter for Lighter, More Powerful Electric Vehicles
Researchers at the U.S. Department of Energy's Oak Ridge National Laboratory have created a power inverter that could make electric vehicles lighter, more powerful and more efficient, according to an article on The new inverter achieves much higher power density with a significant reduction in weight and volume. At the core of this development is wide bandgap material made of silicon carbide with qualities superior to standard semiconductor materials… Read more.

December 1, 2014
New Silicon Carbide MOSFET Evaluation Kit from Cree
The KIT8020CRD8FF1217P-1 multi-function evaluation board is easily configurable for different topologies with SiC MOSFETs and SiC diodes and includes:
  • Two C2M0280120D Cree SiC 1200V, 80mΩ, TO-247-3 MOSFETs
  • Two C4D20120D Cree SiC 1200V, 20A, TO-247-3 Schottky diodes
  • Evaluation board with an Avago gate driver
  • A compatible heat sink
  • All mounting hardware
  • User Manual
Learn more.

November 26, 2014
Happy Thanksgiving Holiday to all our American friends


November 24, 2014
Three New 1200V SiC MOSFETs in Three Different Package Styles from Microsemi
The new MOSFETs are built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand. Package styles include SOT-227, TO-247 and D3PAK. Read more.

November 21, 2014
In the News: Silicon Carbide Key Ingredient for Success of Space Mission
Airbus Defence and Space, the world’s second largest space company, turned to silicon carbide as the key material for development of a more precise optical imaging system to identify the landing site for its 100-kg lander. SiC’s “extreme thermal stability at low temperature guarantees the unrivalled resolution of the images and also means that an active thermal control system was not necessary, so energy produced by solar arrays could be used for [the lander’s] other vital functions.” Read more.

November 21, 2014
New Gate Driver In-Stock for Cree’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Cree’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.

November 13, 2014
Expanded Family of 650V SiC Diodes from Cree
The new devices represent an expansion to Cree’s family of Z-Rec™ 650V Junction Barrier Schottky (JBS) diodes that previously included 10A, 8A, 6A and 4A 650V diodes in TO-220-2 packages. The entire line of JBS diodes offer zero reverse recovery current, zero forward recovery voltage, high-frequency operation, temperature-independent switching behavior, and extremely fast switching. They are ideally suited for switch mode power supply, power factor correction, solar inverter, motor drive, and electrical vehicle charger applications. Learn more.

November 10, 2014
Report: Asia-Pacific to Have Highest Growth Rate in SiC Power Semiconductor Applications
The Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 Million by 2020, growing at a CAGR of 42.03% from 2014 to 2020, according to a new report from Markets and Markets. The power sector in APAC is expected to create huge demand for silicon carbide based semiconductor devices. Many power and smart grid projects are expected from Asian countries such as China, India, and Thailand. The implementation of solar power project in countries such as China and Japan will further boost the demand of silicon carbide based semiconductor. Learn more.

November 6, 2014
In the News: U.S Navy Turns to Silicon Carbide to Manage Shipboard Power Requirements
National Defense article discusses how the Office of Naval Research and a nine-university research and development consortium have developed 3-megawatt silicon carbide power converters that perform at higher voltages and frequencies than the legacy equipment, as well as reducing volume by 60 percent and weight by 30 percent. Learn more.

November 3, 2014
New Gate Driver In-stock for Cree’s 1200V SiC Module
Now available from Richardson RFPD, the PT62SCMD12 is a dual 1200V SiC MOSFET driver designed for driving Cree’s CAS300M12BM2 62mm, 1200V SiC power module. Learn more.

October 30, 2014
Presentation: Cree PV Inverter Tops the 1kW/kg Mark with All-SiC Design
Download the presentation given at the Power Fortronic show in Bologna by Cree’s Alejandro Esquivel, outlining the design and performance of an all-silicon carbide solar inverter designed, built and tested by Cree. The inverter uses Cree’s state-of-the-art SiC MOSFETs and Schottky diodes in the boost, inverter and auxiliary power supply circuits. SiC device technology provides the quantum improvement in efficiency and switching frequency, allowing 50kW of three-phase power output in the size of today’s 25kW silicon based inverter. The resulting 1kW/kg sets an industry benchmark for power density. Download presentation.

October 27, 2014
Realize Performance & Cost Benefits with Microsemi’s NPT SiC/Si NPT IGBTs
Microsemi’s 650V and 1200V non-punch through (NPT) IGBTs offer over 50% savings against comparable Si MOSFETs operating up to 150 kHz. Microsemi 1200V NPT IGBTs are available in 25A, 40A, 50A, 70A and 85A and 650V in 45A, 70A and 95A current ratings. These devices offer a dramatic reduction of 20% – or more – in total switching and conduction losses, as compared to competitive solutions. Learn more.

October 23, 2014
1200V SiC MOSFET Rated at 80 milliohms in a TO-247 package
The APT40SM120B is part of a new family of SiC MOSFETs developed using Microsemi’s in-house SiC fabrication capabilities. The 80mΩ device is offered in a TO-247 package and features best-in-class RDS(on) v. temperature, as well as ultra-low gate resistance for minimizing switching energy loss. Learn more.

October 20, 2014
In the News: Wide-bandgap Power Semiconductor Market to Grow at 63% CAGR to $500m in 2017
“… Because of their superior material properties, wide-bandgap power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) can offer performances orders-of-magnitude better than silicon devices. As a result, they are widely expected to be the next-generation power devices.” Read more.

October 17, 2014
Book: Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Application
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications, based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s. Download book.

October 13, 2014
Thesis: Analyzing and Testing of Silicon Carbide Components for Down Hole Oil Applications
Norwegian University of Science and Technology master thesis analyzes the use of SiC in high temperature down hole oil exploitation activities. The inherent properties of wide bandwidth, high breakdown electrical field and high thermal conductivity give commercially-available SiC power devices up to 150°C operational junction temperature. This study produced a review of Cree’s 1200V, 50A six-pack module in a laboratory environment. Learn more.

October 9, 2014
IEEE: Single Pulse Avalanche Robustness and Repetitive Stress Aging of SiC Power MOSFETs
This paper from Elsevier Ltd., presents an extensive electro-thermal characterization of latest-generation SiC power MOSFETs under Unclamped Inductive Switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their aging under repetitive stress conditions. Both a functional and a structural characterization of the transistors is presented, with the aim of informing future device technology development for robust and reliable power system development. Learn more.

October 6, 2014
PFC, PV Inverter and Now Rail Applications Are Fueling SiC Sales
New Yole Développement report provides a complete analysis of the SiC device, module and substrate industry for power electronics applications. The report highlights the SiC v. Si bill of material comparisons for the most significant applications and concludes with the chances of SiC to penetrate each individual segment. Yole notes that PFC, PV inverter and rail applications are fueling SiC sales with rail applications exhibiting a > 80% CAGR from 2015-2020. Learn more.

October 3, 2014
Study Focuses on Effect of Diode Operating Temperature on Conducted Noise
From IEICE Communications Express, this study evaluates the influence of temperature on the dynamic operation of the diode and the conducted noise frequency spectrum in the continuous-current-mode (CCM) DC-DC boost converter for the Si PiN diode and SiC Schottky Barrier Diode. Read more.

October 2, 2014
Downloadable SiC Product Selection Guide Now Available
Check out Richardson RFPD’s Silicon Carbide Product Selection Guide for quick access to our complete SiC product offering from Cree, Microsemi, Powerex and Vincotech. Updated weekly and downloadable in .pdf format, the SiC selection guide provides brief specs, low volume pricing, and datasheet links for our vendors’ SiC diodes, MOSFETs, modules and more. Download now.

September 25, 2014
Cree’s new 1200V, 80mΩ SiC Module Now Available
Available from stock at Richardson RFPD, the Cree CCS020M12CM2 is a 20A, full-SiC six-pack (three phase) module in an industry standard EconoPACKTM2 package (45mm). Learn more.

September 22, 2014
Cree SiC MOSFETs used in Sanix Photovoltaic Inverters
Cree has announced that its C2M™ 1200V, 80mOhm SiC MOSFETs have been selected by Japan's Sanix Corporation to be designed into its new 9.9kW three-phase solar inverters for use in the construction of commercial photovoltaic systems in the fast-growing Japanese solar energy market. Learn more.

September 18, 2014
News: Sales of SiC MOSFet Rising on the Back of Falling Prices
New article from Compound Semiconductor highlights the expansion of product portfolios and entrance of new chipmakers into the market. Costs have fallen, partly through increases in yield, and also via a reduction in chip sizes while maintaining current ratings. Read more.

September 15, 2014
Cree Introduces First 1.7kV, 8mΩ SiC Module
Available from stock at Richardson RFPD, the Cree CAS300M17BM2 is a 300A, full-SiC half-bridge module in a 62mm package. This new module enables up to 40% reduction in size and cost of filter components in megawatt class motor drive and grid-tie inverter applications. Learn more.

September 11, 2014
News: Industry Report Forecasts Silicon Carbide CAGR at 42% from 2014 to 2020
According to a new market research report "Silicon carbide (SiC) in semiconductor market by technology, product, and application (Automotive, Defense, Computers, Consumer Electronics, ICT, Industrial, Medical, Power, Railways, and Solar), by geography - forecast and analysis to 2013 - 2020" by MarketsandMarkets, the Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 Million by 2020, growing at a CAGR of 42.03% from 2014 to 2020… Read more.

September 9, 2014
Download Richardson RFPD’s New SiC Technology Overview Brochure
New Silicon Carbide Technology Overview brochure highlights the benefits of SiC vs. Si technology in power conversion applications, along with products and package types available from industry-leading suppliers Cree, Microsemi, Powerex and Vincotech. In addition, learn about the latest test/evaluation products, including gate driver modules, reference designs and evaluation boards. Download now.

September 5, 2014
Technical Paper: Use of SiC Diodes Eliminates Reverse Recovery Problem
This paper summarizes study to analyze and design parallel booster power converters for power factor correction using an active filtering approach by implementing single-phase soft-switching technique with an active snubber circuit. Learn more.

September 3, 2014
How to Manage Power in Medical Device Applications
In power-hungry medical devices such as imaging equipment, power management is critical. While power supplies for x-ray machines tend to range from 2 to 3kW, high-end systems like CT scanners can exceed 100kW. This Electronic Components article features Cree’s C2M0025120D silicon carbide MOSFET for achieving greater power density, and also discusses enhancing power efficiency and optimizing static and active energy states. Learn more.

August 28, 2014
Microsemi 650V SiC/Si NPT Hybrid Discretes are Cost-effective Choice over MOSFETs
Richardson RFPD is stocking three new 650V non-punch through (NPT) IGBTs designed to replace more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz. Available in 45A and 70A current ratings, these 650V SiC/Si hybrid discrete join Microsemi’s 1200V SiC/Si NPT IGBTs previously introduced. Learn more.

August 26, 2014
News: SiC Power Electronics Can Slash $6,000 From Cost of Tesla Model S
New research reports that wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early as 2020. Learn more.

August 20, 2014
Analysis Touts Benefits of Silicon Carbide
The excellent properties of Sic have been playing important roles in Chinese society development and construction. This recent article highlights the “revolutionary change” SiC is having in the China semiconductor market. Learn more.

August 18, 2014
New, Lower Pricing on Microsemi SiC Schottky Diodes
Microsemi has announced a reduction of at least 25% on its line of 1200V SiC diodes. The complete line of SBDs at 10A, 20A and 30A are available from Richardson RFPD. Learn more.

August 14, 2014
New! 650V, 20A Silicon Carbide Schottky Diode from Cree
The CVFD20065A Z-Rec® rectifier features low forward voltage (Vf = 1.35V @ 25 ºC) and is available in a compact TO-220 package.
Learn more.


August 11, 2014
Research News: Advanced Dielectric Film Growth Technique for Next Generation Power Devices
A research group from the University of Tokyo Graduate School of Engineering report on a novel dielectric film growth technique which improves the performance of SiC power devices.
Learn more.


August 8, 2014
Technical Paper Highlights Use of SiC in Aircraft Application
In a More Electric Aircraft, there is a need to integrate power electronics with the starter generator system in hostile engine environments. This paper describes a project involving a 50kVA SiC-based high temperature bi-directional converter that provides the power conversion for the starter generator system at 200 °C, which can be directly mounted on the engine compartment. The converter is a three phase PWM active rectifier, based on a SiC MOSFET. Learn more.

August 7, 2014
New! Microsemi 1200V, 32A SiC power MOSFET in SOT-227 Package
The Microsemi APT40SM120J features best-in-class RDS(on) v. temperature, ultra-low gate resistance for minimizing switching energy loss and superior maximum switching frequency all in a SOT-227 package. Learn more.

August 4, 2014
IEEE Paper Highlights Improved Efficiency of SiC MOSFETs in 3.3kW EV Charger Application
An on-vehicle battery charger (OBC) for plug-in hybrid electric vehicles and battery electric vehicles is developed for the purpose of measuring the performance of the PFC boost utilizing different switching power devices. With the SiC DMOSFET at 200kHz switching frequency, the measured maximum power conversion efficiency of the PFC boost front-end converter is 97.7%. The full OBC efficiency is 94.7%. Learn more.

July 31, 2014
News: New CSR Zhuzhou IGBT Production Plant Operated by Dynex
Chinese semiconductor manufacturer, Zhuzhou CSR Times Electric Co, has inaugurated a $240m IGBT (insulated gate bipolar transistor) production plant – said to be the first of its kind in China, and the second worldwide – incorporating technology developed by its UK subsidiary, Dynex Semiconductor. Learn more.

July 29, 2014
Cree SiC Power Design Efforts Could Be Worth $1 Million USD
The Little Box Challenge is a design contest presented by Google and the IEEE Power Electronics Society to spur innovation in power inverter design with a $1 million USD prize to the person or team who can achieve the highest power density. Learn more.

July 21, 2014
News: New York Power Electronics Manufacturing Consortium Highlights
Use of SiC
A new consortium in which the state of New York will partner with over 100 other companies, universities and public authorities will focus on the development and manufacture of the next generation of Silicon Carbide and other materials used on semiconductors. All NY-PEMC partner companies will have access to state-of-the-art 6” SiC wafers developed and produced there and a baseline process flow where they can make their own enhancements in preparation for high volume, cost effective manufacturing. Learn more.

July 24, 2014
Video: High-performance SiC-based Plug-in Hybrid Electric Vehicle
Battery Charger
This video highlights Cree’s participation with Arkansas Power Electronics International, Toyota, Oak Ridge National Labs, the University of Arkansas and government agency ARPA-E on a SiC-based battery charger featuring power capability of 6kW, 95%+ efficiency and ultra-high power density of 5kW/L and 3.8kW/kg. The new Level 2 isolated on-board vehicular battery charger uses SiC power devices for application in electric vehicles and plug-in hybrid electric vehicles. View here.

July 17, 2014
Full SiC & Hybrid SiC IGBTs from Powerex Feature Low Profile Design
Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high-performance, all-SiC modules—or with high-frequency silicon IGBTs into hybrid Si/SiC modules. The new low-profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications. Learn more.

July 14, 2014
Cree Dual Channel SiC MOSFET Driver Available from Stock
The CGD15HB62P half bridge gate driver is designed for use with 1200V SiC MOSFET modules and has been optimized for use with Cree’s CAS300M12BM2 62 mm module. Learn more.

July 10, 2014
New 2nd-Generation Z-FET® from Cree!
The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package. Benefits include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability. Learn more.

July 7, 2014
This week at SEMICON West—Wide-Bandgap Power Electronics: A Path Toward CO2 Emission Decrease
Jean Christophe-Eloy, president and CEO of Yole Développement, will chair a session on July 10th to discuss the positive impact of CO2 emissions based on the power conversion efficiency of systems using SiC and GaN. Yole estimates wide bandgap (WBG) devices are expected to generate business exceeding $1 billion USD by 2020. Learn more.

July 3, 2014
New! 1200V, 40A SiC MOSFET from Microsemi
The APT40SM120B is part of a new family of SiC MOSFETs developed using Microsemi’s in-house SiC fabrication capabilities. The 80mΩ device is offered in a TO-247 package and features best-in-class RDS(on) v. temperature, as well as ultra-low gate resistance for minimizing switching energy loss. Learn more.

July 2, 2014
Download Our Latest SiC Products Brochure!
New Silicon Carbide Technology selection guide highlighting our offering of SiC Schottky Diodes, MOSFETs and SiC modules from Cree, Microsemi, Powerex and Vincotech. Learn more.

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