Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

March 23, 2017
In the News: Wolfspeed to Present Latest SiC MOSFET Technology at APEC 2017
Exhibiting at Booth #1110, Wolfspeed will demonstrate the newly designed low-inductance packaging for its SiC MOSFET family, as well as the new 900V 10mOhm MOSFET in its high-performance three-phase power evaluation unit, and the hardware for a 20kW two-level full-bridge LLC resonant converter using 1000V SiC MOSFETs in a new TO-247-4L package. Read more.

March 22, 2017
White Paper: Analysis of Power Loss and Improved Simulation Method of a High Frequency Dual-Buck Full-Bridge Inverter
Abstract: A high frequency dual-buck full-bridge inverter for small power renewable energy application is proposed in this paper. A switching frequency of 400 kHz is achieved with the adoption of the SiC power device… Read more.

March 15, 2017
White Paper: A Brief Overview of SiC MOSFET Failure Modes and Design Reliability
This paper briefly introduces various aspects which should be considered when implementing Silicon Carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) into a design. There is an increasing trend regarding the use of these devices in various applications due to their improved performance over conventional Silicon (Si) based devices. The failure modes of SiC MOSFETs are discussed, as well as the indicators which signal device degradation and failure. The impact of packing design on reliability and performance is also discussed along with a number of application related concepts which bring to light some of the issues regarding the use of SiC MOSFETs as a relatively young technology. Read more.

March 9, 2017
On-Demand Webinar: SiC Devices Meet High-Voltage Challenges for Solar
Solar installations are under pressure to reduce cost and improve performance: two opposing goals that are difficult for Si-based power conversion solutions to meet. The industry is trending towards higher voltages and distributed architecture, among other strategies, to meet the challenge. The latest generation SiC MOSFETs and diodes are ideally suited to reduce overall cost with higher voltage without giving up performance. View Webinar.

March 6, 2017
In the News: 1200V 75mOhm SiC FET in Low-Inductance Package
Wolfspeed, a Cree Company, has expanded its innovative C3M™ platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits. Read more.

February 23, 2017
In the News: Eval Board for 1.7kV SiC MOSFET
Wolfspeed has created an evaluation board for its 1.7kV SiC (silicon carbide) MOSFET, implementing a 48W power supply that can be fed from anywhere between 300Vdc and 1kVdc. Read more.

February 22, 2017
In the News: Prolonged Silicon Carbide Integrated Circuit Operation in Venus Surface Atmospheric Conditions
The prolonged operation of semiconductor integrated circuits (ICs) needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the
∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks) electrical operation of two silicon carbide (4H-SiC) junction field effect transistor (JFET) ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus. Read more.

February 15, 2017
In the News: Wolfspeed Extends 650/1200V Silicon Carbide Diode Specs
The 650V 12A C3D12065A and 16A C3D16065A Z-Rec SiC Schottky diodes are supplied in TO-220-2 packages, and are targeted at PFC boost stages in server power supplies, especially next-generation systems rated for 1100W, 1600W, 2000W, and 2400W with low-line or high-line inputs. They are also available as bare die. The 650V 2x15A C3D30065D Z-Rec diodes are supplied in TO-247-3 packages, and are best suited for rectification applications in 3-5kW power supplies. Also supplied in TO-247-3 packages, the 1200V 2x7.5A C4D15120D Z-Rec diodes are ideal for use in PV inverters and on- and off-board chargers. Read more.

February 2, 2017
White Paper: A Bidirectional DC-DC High Frequency Dual-Half Bridge Series Resonant Converter: Design, Simulation and Experimental Results
This paper looks at a bidirectional high frequency dual-half bridge series resonant converter (DHBSRC) designed for energy storage application. Two half-bridges are connected through LC resonant tank and HF transformer. Power flow of the converter is controlled using phase shifted gating scheme with 50% duty cycle. Operating principle, analysis and design of DHBSRC are presented in the report. This project also looks at the benefit of using new generation SiC MOSFETs that have many promising properties like larger bandgap and higher thermal conductivity, which predicts lower conduction losses and higher efficiency of converter. Download paper.

January 26, 2017
White Paper: Forward Current-voltage Characteristics Simulation of 4H-SiC Silicon Carbide Schottky Diode for Power Electronics
Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n≈1.1 at low temperature ∼300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode. Download paper.

January 23, 2017
In the News: Power Views – The Future of Electricity
From the shop floor to equipment performance, electrification is in expansion. While the benefits of electrification are already being felt, the development in the industrial world must be accelerated. Read more.

January 20, 2017
In the News: Wolfspeed Introduces New SiC MOSFET for EV Drive Trains
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design. Read more.

January 16, 2017
White Paper: Efficiency and Current Harmonics Comparison Between SiC and Si Based Inverters for Microgrids
In this paper, the power loss and current harmonics of both Si-IGBT and SiC-MOSFET based inverters are investigated and compared in low voltage (LV) microgrid applications, respectively. And the experimental results show that the application of SiC devices greatly increases the energy efficiency and improves the power quality in microgrid. Read more.

January 12, 2017
Available Now: Wolfspeed SiC 20 kW LLC Reference Design
The CRD-20DD09P-2 makes it easy to evaluate converter level efficiency and power density gains when using Wolfspeed’s new 1000 V, 65 mΩ SiC MOSFETs in a 4L-TO247 package in a full bridge resonant LLC circuit. It also can be used to evaluate the integration of a SiC-based isolated DC/DC stage in a larger multi-stage prototype system, like a fast DC charger for electric vehicles. Learn more.

January 9, 2017
New Microsemi 1200V SiC MOSFET
The APT80SM120B features low conduction losses at high temperature, low switching losses, high short circuit withstand ratings, low gate resistance, and patented SiC technology. Microsemi’s portfolio of 700V, 1200V and 1700V SiC MOSFETs improve system efficiency and reliability, and they offer numerous advantages over silicon superjunction MOSFETs.
Learn more

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