Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

April 14, 2016
Vincotech Solutions to Speed-up Your Applications
fastPACK 0 SiC - a faster, cooler, and even more efficient power module designed for switching frequencies up to 400 kHz. Featuring a fast-switching 900V SiC MOSFET that outperforms 1200V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650V MOSFETs. Learn more.
 

April 12, 2016
In the News: Is Only Full SiC the “Real“ SiC?
SiC Schottky diodes almost completely eliminate adverse reverse-recovery effects found in Si devices, reducing IGBT switching losses by up to 60% using fast IGBT devices in hard switched conditions. By combining Silicon and SiC chips in the same package, performance improvements can be achieved at medium power levels while using cheaper wide band gap material. Read more in the April issue of Bodo’s Power Systems, starting on page 14. (Login or free registration required.)
 

April 8, 2016
In-Stock Now: Vincotech flow 3xPHASE-SiC (1200 V / 80 mΩ) for Solar Inverter, Charger and Power Supply Applications
The 10-PZ126PA080MR-M909F28Y features SiC-power MOSFETs and Schottky diodes, 3-phase inverter topology with split output, improved switching behavior, ultra-low inductance with integrated DC capacitors, a switching frequency >100 kHz, and temperature sensor. Learn more.
 

April 7, 2016
Updated: Silicon Carbide Product Selection Guide from Richardson RFPD
Download our updated SiC Selection Guide, featuring our complete portfolio of SiC-focused products from industry-leading suppliers, including Microsemi, Powerex, Vincotech and Wolfspeed. Download pdf now.
 

March 31, 2016
White Paper: High Voltage and Large Current Dynamic Test of
SiC Diodes and Hybrid Module

Abstract: High voltage and large current dynamic test for SiC diodes and hybrid module was studied. Then high voltage dynamic test for 1700V-25A 4H-SiC junction barrier schottky (JBS) diodes and high current dynamic test for a 1700V-200A half-brige SiC hybrid module were performed. With the change of test conditions, such as driving resistance and load inductance, dynamic parameters have some variation. The reverse recovery time of SiC diode and swich on/off time of SiC hybrid module under test is between 20ns to 200ns. The test got a high accuracy. These devices are very suitable for high frequency applications. Read more.
 

March 28, 2016
Meet Wolfspeed™, A Cree Company
Cree has achieved global renown as a leader in wide bandgap, SiC and GaN-based electronics for Power and RF applications. With the creation of Wolfspeed, it is poised to liberate the world’s electronics systems from the constraints of silicon with the fastest, smallest, lightest and most efficient semiconductor products on the planet. Read more.
 

March 18, 2016
Market Report: Silicon Carbide Market Analysis By Product, By End-use And Segment Forecasts To 2020
The Global Silicon Carbide Market is expected to reach USD 4.49 billion by 2020. Positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent is expected to drive silicon carbide demand. In addition, silicon carbide is an essential element in the manufacturing of semiconductors which is expected to witness significant growth over the next six years. Revitalizing automobile industry, especially in Asia Pacific, is also expected boost the demand for silicon carbide. Read more.
 

March 16, 2016
In the News: Inside the Super-Small, High-Efficiency Solar Inverters of Google’s Little Box Challenge
GaN and SiC semiconductors and novel designs pack a game-changing power density. Can they compete on cost and at scale? Read more.
 

March 11, 2016
In the News: Sandia Researchers Search for More Powerful
Semiconductor Materials

Excerpt: “Wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) allow devices to operate at much higher voltages, frequencies, and temperatures than the conventional materials, so more powerful, cheaper, and more energy-efficient electrical conversion systems can be built.” Read article.
 

March 7, 2016
Richardson RFPD at APEC 2016 / Wolfspeed Eval Kit Drawing
Visit us at Booth 2227, where we’ll be featuring component sourcing and design support for your high power applications including discrete devices and modules from industry-leading manufacturers Microsemi, Wolfspeed, Maxwell, Power Integrations, Vincotech, Cornell Dubilier and Astrodyne. We’ll also be holding a drawing to win Wolfspeed’s new 900V SiC evaluation kit. This pre-assembled PCB assembly in a half-bridge configuration features two Wolfspeed C3M0120090J SiC MOSFETs in surface mount 7L-D2PAK packages. Use it as an evaluation tool or as a means to quickly prototype a SiC power converter. Learn more.
 

March 4, 2016
Technical Article: SiC MOSFETs Enable High Frequency in High Power
Conversion Systems

High power converter designers have always had to strike a balance between performance, size, cost, and operating switching frequency (Fsw). Higher Fsw results in smaller and lighter converters, but they pay a penalty in efficiency. Typically, for high power systems (>500kW), the balancing act results in an optimal Fsw of about 3 kHz. All-SiC power modules now allow design engineers to design to higher Fsw without a significant penalty on performance, tipping the scale in favor of higher frequency power conversion systems, which can result in smaller size and weight, faster response times, simplified, and more reliable power conversion systems.
Read more.
 

February 29, 2016
Wolfspeed SiC Power MOSFET for Renewable Energy, Lighting, High-voltage DC/DC Converters, Telecom Power Supplies and Induction Heating Applications
The C3M0280090J with C3M™ MOSFET technology features V(ds) of 900V, I(d) @ 25°C of 11A and R(ds)(on) of 280 mΩ. Learn more.
 

February 25, 2016
New 900V SiC MOSFET from Wolfspeed
The C3M0120090J features new C3M SiC MOSFET technology, high blocking voltage with low On-resistance, high speed switching with low capacitances, a new low impedance package with driver source, and a fast intrinsic diode with low reverse recovery (Qrr). Learn more.
 

February 23, 2016
In the News: High-Voltage SiC Power Modules for 10–25 kV Applications
The development of power electronic devices with higher operating voltages (6.5 kV+) has enabled more power to be transmitted for a given current and reduced the number of switches required to reach those voltage levels in multi-level converters. Silicon Carbide (SiC) power devices — with their significantly higher blocking voltages (into the tens of kilovolts), higher switching frequencies, and higher operating temperatures (200°C) — have had a major impact on the ability of power electronics engineers to develop power modules that are more compact, operate at higher voltages, and require less thermal management than power modules designed with conventional Silicon devices… Read more.
 

February 18, 2016
Thesis: Motor Integrated Variable Speed Drives
This thesis discusses the trend in variable speed drives (VSDs) to develop fully integrated systems, which lead to low-cost products with shorter design cycles. It concludes that motor integrated variable speed drive is a very attractive choice for some of the industrial and consumer applications, giving freedom to consumer plug and play with drive, and also enabling efficient and simplified ways to utilize available electrical energy. Download now.
 

February 15, 2016
High-Temperature, Wirebondless, Ultracompact Wide Bandgap Power Semiconductor Modules
Silicon carbide (SiC) and other wide bandgap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and ultrahigh power density for both space and commercial power electronic systems… Read more on page 19 of An Overview of 2014 SBIR Phase II Power, Energy Storage, and Storage.
 

February 10, 2016
In the News: Wolfspeed Powers Gruppo PBM Battery Chargers Enabling Faster Charge while Consuming Less Energy
Wolfspeed, A Cree Company, announced today that Gruppo PBM, a leader in industrial battery chargers, is using Wolfspeed™ SiC MOSFETs in its new HF9 battery charger family to enable higher efficiency and power density at a lower overall system cost. Read more.
 

February 4, 2016
Wolfspeed’s Expanded Portfolio of 900V SiC MOSFETs
The C3M0120090J, C3M0120090D, C3M0280090J and C3M0280090D join the previously-released C3M0065090J and C3M0065090D and feature Wolfspeed's new C3M SiC MOSFET technology. They offer high blocking voltage with low On-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr). Wolfspeed SiC MOSFETs are commercially available with TO-247 and SMD package options. The newly-released surface-mount package, specifically designed for high-voltage MOSFETs, has a small footprint with a wide creepage distance of seven millimeters between its drain and source. The new package also includes a separate driver-source connection that reduces gate ringing and provides clean gate signals.
 

January 28, 2016
In the News: Can Silicon Carbide Deliver On Promises Of High-reliability Applications?
Silicon carbide (SiC) is a material that offers great potential for power-electronics applications in high-reliability aerospace and military systems. Compared to conventional silicon devices, SiC’s improved electron mobility and high-temperature capability together with a high breakdown voltage appears to offer an ideal combination of features for power circuits. But can SiC deliver on those promises? Read more.
 

January 21, 2016
In the News: Key Innovations in Silicon Carbide and Gallium Nitride Based Power Electronic Devices Intended for High Power Applications in Aerospace, Automotive, Smart Grids, Industrial Drives and Data Centers
A new report from Research and Markets evaluates high power electronics technologies and assesses innovations that will have an impact on various applications in the near-, medium-, and long- term. Read more.
 

January 18, 2016
Technical Article: Comparative Loss Evaluation of Si IGBT Versus SiC MOSFET for 3-Phase SPWM Inverter
This paper published in the Indian Journal of Science and Technology looks at reducing the losses of a 3-phase SPWM 2-level inverter by replacing existing silicon IGBT switches with the latest SiC MOSFET switches. Read more.
 

January 12, 2016
New! Wolfspeed C3M0120090D SiC Power MOSFET
This new Wolfspeed device features C3M™ SiC MOSFET technology and offers Vds of 900V, Id @ 25 °C of 23A and Rds(on) of 120 mΩ. Suitable for renewable energy, EV battery chargers, high voltage DC/DC converters, switch-mode power supplies and lighting applications. Learn more.
 

January 8, 2016
Technical Article: Influence of the Common Mode Impedance Paths on the Design of the EMI Filters Used with SiC-buck Converter
In this paper, a filtering solution is proposed to reduce the high frequency disturbances caused by the fast SiC components. The simulation results obtained with the proposed model are compared with the measurements to show the effectiveness of the proposed EMI filter design method. Read more.
 

January 8, 2016
Technical Article: High Power Silicon Carbide (SiC) Power Processing Unit Development
NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance. Read more.
 

December 22, 2015
Happy Holidays from Richardson RFPD
We will be taking a short break, but we are looking forward to bringing you more SiC Tech Hub news items starting January 4, 2016!
 

December 22, 2015
Technical Article: Understanding Evolution of SiC Schottkys is
Key to Device Selection

During the 10+ years since SiC diodes were introduced, both their device design and reliability parameters have undergone significant evolutionary changes. These changes have resulted in a broadening portfolio of SiC Schottky diodes available on the commercial market. As such, discerning design engineers should be aware of the differences between these diodes and take them into consideration during the design cycle… Read more.
 

December 18, 2015
In the News: GE to Replace Silicon with SiC in Power Products
At a press briefing in London this week on next generation technologies, power electronics company GE discussed imminent plans to replace silicon with SiC technology in all its power electronics products. Read more.
 

December 15, 2015
Article: Assessing Next-generation Discretes
This technical article from Wolfspeed’s Dr. Thomas Barbieri covers measuring SiC Schottky diode ruggedness with a high voltage pulse generator. Read more.
 

December 10, 2015
NEW! 900V 65 mOhm SiC MOSFET in TO-247-3 Thru-hole Package from Wolfspeed
Benefits of the C3M0065090D include higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency. View now.
 

December 7, 2015
Video: Silicon Carbide Technology
This Powerex online training seminar provides an overview of silicon carbide technology, including a comparison of this new technology versus traditional silicon modules. An introduction to the new Powerex Gen II SiC MOSFET and Si/SiC hybrid modules is also provided. View now.
 

December 3, 2015
Richardson RFPD Silicon Carbide Technology Overview
Includes our SiC offerings from franchised vendors, an overview of SiC test/evaluation products, a package style selection guide, and more. Download now.
 

November 30, 2015
NEW! C3M0280090D SiC Power MOSFET from Wolfspeed
Featuring Wolfspeed’s new C3M SiC MOSFET technology, high blocking voltage with low On-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr), the C3M0280090D is designed for renewable energy, lighting, high-voltage DC/DC converters, telecom power supplies, and induction heating applications. Learn more.
 

November 25, 2015
Happy Thanksgiving to our friends and colleagues in the U.S. We’ll be back next week with more SiC Tech Hub updates.
 

November 23, 2015
White Paper: Measuring SiC Schottky Diode Ruggedness with A High Voltage Pulse Generator
When the first generation of silicon carbide Schottky diodes was introduced more than 10 years ago, their widespread adoption was somewhat challenged by unforeseen dV/dt limitations within certain manufacturers’ devices. In particular, devices with lower dV/dt capability were susceptible to failure from large in-rush currents. An initial reliability study of some of these early 600V SiC Schottky diodes reported an upper dV/dt limit of 55–60V/ns (volts per nanosecond), which unfairly tarnished the reputation of SiC diodes in general. Observing that their SiC Schottky diodes were not included in the initial study, researchers at Cree (now Wolfspeed, A Cree Company) performed a subsequent reliability study on their first-generation 600V SiC Schottky diode, and demonstrated that their SiC diodes could withstand a turn-on rate of 75V/ns and a turn-off rate of 100V/ns for more than 100,000 cycles without failure. Read more.
 

November 19, 2015
New Dual-Channel SiC MOSFET Driver from Wolfspeed™
The CGD15HB62P1 features two output channels, an integrated isolated power supply, direct-mount low induction design, short circuit protection and under-voltage protection. It is a gate driver for use in industrial applications for two of Wolfspeed’s 1200V SiC MOSFET power modules, the 300A CAS300M12BM2 and the 120A CAS120M12BM2.
 

November 16, 2015
Technical Article: Opening Windows for Silicon Carbide Junction
Termination Extensions
Companies keen to commercialize SiC for high-voltage power applications need production flows that are robust against process variation. This article attempts to improve the effectiveness of junction termination extensions across a range of parameters. Read more.
 

November 12, 2015
In the News: Power Electronics: Silicon Carbide Gains Traction
Next-generation power electronics capable of reducing energy consumption are in high demand, particularly in the transportation industries. A key way of saving energy in electronics is by reducing the losses inherent in switching processes and power conversion. Much attention is now being given to silicon carbide (SiC) for electronic components, a material whose properties outperform conventional silicon in terms of thermal conductivity, loss reduction and the ability to withstand high voltages. Read more.
 

November 11, 2015
Demonstration Board for a Single-end Flyback Converter Design
The CRD-060DD12P is a Wolfspeed demonstration board for a single-end Flyback converter design with a commercially available 1700V Silicon Carbide (SiC) MOSFET to replace conventional two-switch Flyback converter for high voltage input auxiliary power supply of three phase applications. Learn more.
 

November 2, 2015
White Paper: Applications, Benefits, and Challenges of Wide Bandgap Based Power Inversion
Since their inception, power electronics have relied on switching devices created from silicon (Si). Manufacturing capabilities are now progressing to the point that the atomic properties of Si are quickly becoming a bottleneck to further progress in this field. Engineers would like devices that can sustain higher voltages, realize better efficiencies, switch at faster speeds, and operate at higher temperatures. For these reasons and others, researchers are evaluating power devices created from wide bandgap (WBG) semiconductors. Two of these materials, silicon carbide (SiC) and gallium nitride (GaN), are already being offered commercially. In terms of power device functionality, these components switch at higher speeds and with a lower on-resistance…
Read more.
 

November 5, 2015
VIDEO: APEC 2015 interview with Yole Développement
In this video from APEC 2015, Pierric Gueguen, Ph.D, Yole’s Business Unit Manager for Power Electronics & Semiconductors, highlights the growth expectations for silicon carbide and discusses the characteristics that differentiate the applications that benefit from SiC vs. GaN on SiC technology. Watch now.
 

October 29, 2015
650V & 1200V SiC/Si Hybrid NPT IGBTs in Stock!
Microsemi has added three new 650V non-punch through (NPT) IGBTs with integrated zero recovery, low leakage, SiC anti-parallel diodes, to its offering that previously included only 1200V models. Available in 45A and 70A current ratings, these leading edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz. Leveraging Power MOS 8™ technology, the 650V products offer the industry’s best loss performance – approximately 8% better than the closest competing IGBT. Read more.
 

October 20, 2015
In the News: Enabling the Future of Electrically Powered Systems
The primary contributors to poor efficiency in power systems are the silicon semiconductor devices. Power semiconductor devices have been used in power converters since the 1960s, but silicon based power transistors and diodes that carry, switch, and convert the system power can be inefficient and slow to switch due to their intrinsic material properties. For power system users, SiC’s benefits over Si translate into lower system and operating costs, smaller physical footprints, lower cooling costs, and longer lasting, more reliable systems… Read more.
 

October 15, 2015
In the News: Wolfspeed Launches Surface-mount 1700V SiC MOSFET, Enabling System-level Cost Reductions in Auxiliary Power Supplies
Wolfspeed of Durham, NC, USA, a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices, has launched what it claims is the industry's first 1700V SiC MOSFET offered in an optimized surface-mount (SMD) package designed for commercial use in auxiliary power supplies in high-voltage power inverter systems. Read more.
 

October 13, 2015
NEW! Wolfspeed Dual Channel SiC MOSFET Gate Driver for 1200V SiC MOSFET Power Module
This new gate driver features 2 output channels, integrated isolated power supply, direct mount low inductance design, short circuit protection, and under-voltage protection. It is designed for Wolfspeed’s CAS300M12BM2 1200V, 300A module and CAS120M12BM2 1200V, 120A module. Learn more.
 

October 8, 2015
Gate Driver In-Stock for Wolfspeed’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Wolfspeed’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.
 

October 5, 2015
White Paper: Impact of Silicon Carbide Device Technologies on Matrix Converter Design and Performance
The aim of this thesis is to understand how SiC devices are different from the conventional Si devices and the effect these differences have on the design and performance of a matrix converter. Learn more.
 

October 1, 2015
In the News: Silicon Carbide Market Is Anticipated To Grow To $4.49 Billion By 2020
The Global Silicon Carbide Market is expected to reach USD 4.49 billion by 2020, according to a new study by Grand View Research, Inc. Positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent is expected to drive silicon carbide demand. In addition, silicon carbide is an essential element in the manufacturing of semiconductors which is expected to witness significant growth over the next six years. Revitalizing automobile industry, especially in Asia Pacific, is also expected boost the demand for silicon carbide. Read more.
 

September 28, 2015
In the News: SiC Players are Pushing the SiC Technology Adoption Towards EV/HEV Industry
After several years of delays and questionings' phase, silicon carbide (SiC) technology confirmed its added-value, compared to existing silicon (Si) technologies. Yole Développement announces in its latest report GaN and SiC Devices for Power Electronics Applications (July 2015 edition) the penetration of silicon carbide (SiC), from low to high voltage (600 to 3300 V), in the following market segments: Power Factor Correction (PFC), photovoltaics, diodes with electric and hybrid electric vehicles (EV/HEV), wind, Uninterruptible Power Supplies (UPS) and motor drives. Read more.
 

September 24, 2015
In the News: Increasing Carrier Lifetimes for High-voltage Silicon Carbide
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs). Such devices are being developed to handle very high voltages beyond 10kV for electric power transmission and distribution… Read more.
 

September 21, 2015
NEW! 1700V SiC MOSFET from Wolfspeed™
The C2M1000170J features high blocking voltage with low RDS(on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability. Learn more.
 

September 15, 2015
In the News: SiC Comes of Age
In a recent report from France-based Yole Développement, Pierric Gueguen and colleagues outlined how SiC at last offers added-value compared to existing silicon technologies, following years of doubt and delays. Read more.
 


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