Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

November 25, 2015
Happy Thanksgiving to our friends and colleagues in the U.S. We’ll be back next week with more SiC Tech Hub updates.

November 23, 2015
White Paper: Measuring SiC Schottky Diode Ruggedness with A High Voltage Pulse Generator
When the first generation of silicon carbide Schottky diodes was introduced more than 10 years ago, their widespread adoption was somewhat challenged by unforeseen dV/dt limitations within certain manufacturers’ devices. In particular, devices with lower dV/dt capability were susceptible to failure from large in-rush currents. An initial reliability study of some of these early 600V SiC Schottky diodes reported an upper dV/dt limit of 55–60V/ns (volts per nanosecond), which unfairly tarnished the reputation of SiC diodes in general. Observing that their SiC Schottky diodes were not included in the initial study, researchers at Cree (now Wolfspeed, A Cree Company) performed a subsequent reliability study on their first-generation 600V SiC Schottky diode, and demonstrated that their SiC diodes could withstand a turn-on rate of 75V/ns and a turn-off rate of 100V/ns for more than 100,000 cycles without failure. Read more.

November 19, 2015
New Dual-Channel SiC MOSFET Driver from Wolfspeed™
The CGD15HB62P1 features two output channels, an integrated isolated power supply, direct-mount low induction design, short circuit protection and under-voltage protection. It is a gate driver for use in industrial applications for two of Wolfspeed’s 1200V SiC MOSFET power modules, the 300A CAS300M12BM2 and the 120A CAS120M12BM2.

November 16, 2015
Technical Article: Opening Windows for Silicon Carbide Junction
Termination Extensions
Companies keen to commercialize SiC for high-voltage power applications need production flows that are robust against process variation. This article attempts to improve the effectiveness of junction termination extensions across a range of parameters. Read more.

November 12, 2015
In the News: Power Electronics: Silicon Carbide Gains Traction
Next-generation power electronics capable of reducing energy consumption are in high demand, particularly in the transportation industries. A key way of saving energy in electronics is by reducing the losses inherent in switching processes and power conversion. Much attention is now being given to silicon carbide (SiC) for electronic components, a material whose properties outperform conventional silicon in terms of thermal conductivity, loss reduction and the ability to withstand high voltages. Read more.

November 11, 2015
Demonstration Board for a Single-end Flyback Converter Design
The CRD-060DD12P is a Wolfspeed demonstration board for a single-end Flyback converter design with a commercially available 1700V Silicon Carbide (SiC) MOSFET to replace conventional two-switch Flyback converter for high voltage input auxiliary power supply of three phase applications. Learn more.

November 2, 2015
White Paper: Applications, Benefits, and Challenges of Wide Bandgap Based Power Inversion
Since their inception, power electronics have relied on switching devices created from silicon (Si). Manufacturing capabilities are now progressing to the point that the atomic properties of Si are quickly becoming a bottleneck to further progress in this field. Engineers would like devices that can sustain higher voltages, realize better efficiencies, switch at faster speeds, and operate at higher temperatures. For these reasons and others, researchers are evaluating power devices created from wide bandgap (WBG) semiconductors. Two of these materials, silicon carbide (SiC) and gallium nitride (GaN), are already being offered commercially. In terms of power device functionality, these components switch at higher speeds and with a lower on-resistance…
Read more.

November 5, 2015
VIDEO: APEC 2015 interview with Yole Développement
In this video from APEC 2015, Pierric Gueguen, Ph.D, Yole’s Business Unit Manager for Power Electronics & Semiconductors, highlights the growth expectations for silicon carbide and discusses the characteristics that differentiate the applications that benefit from SiC vs. GaN on SiC technology. Watch now.

October 29, 2015
650V & 1200V SiC/Si Hybrid NPT IGBTs in Stock!
Microsemi has added three new 650V non-punch through (NPT) IGBTs with integrated zero recovery, low leakage, SiC anti-parallel diodes, to its offering that previously included only 1200V models. Available in 45A and 70A current ratings, these leading edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz. Leveraging Power MOS 8™ technology, the 650V products offer the industry’s best loss performance – approximately 8% better than the closest competing IGBT. Read more.

October 20, 2015
In the News: Enabling the Future of Electrically Powered Systems
The primary contributors to poor efficiency in power systems are the silicon semiconductor devices. Power semiconductor devices have been used in power converters since the 1960s, but silicon based power transistors and diodes that carry, switch, and convert the system power can be inefficient and slow to switch due to their intrinsic material properties. For power system users, SiC’s benefits over Si translate into lower system and operating costs, smaller physical footprints, lower cooling costs, and longer lasting, more reliable systems… Read more.

October 15, 2015
In the News: Wolfspeed Launches Surface-mount 1700V SiC MOSFET, Enabling System-level Cost Reductions in Auxiliary Power Supplies
Wolfspeed of Durham, NC, USA, a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices, has launched what it claims is the industry's first 1700V SiC MOSFET offered in an optimized surface-mount (SMD) package designed for commercial use in auxiliary power supplies in high-voltage power inverter systems. Read more.

October 13, 2015
NEW! Wolfspeed Dual Channel SiC MOSFET Gate Driver for 1200V SiC MOSFET Power Module
This new gate driver features 2 output channels, integrated isolated power supply, direct mount low inductance design, short circuit protection, and under-voltage protection. It is designed for Wolfspeed’s CAS300M12BM2 1200V, 300A module and CAS120M12BM2 1200V, 120A module. Learn more.

October 8, 2015
Gate Driver In-Stock for Wolfspeed’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Wolfspeed’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.

October 5, 2015
White Paper: Impact of Silicon Carbide Device Technologies on Matrix Converter Design and Performance
The aim of this thesis is to understand how SiC devices are different from the conventional Si devices and the effect these differences have on the design and performance of a matrix converter. Learn more.

October 1, 2015
In the News: Silicon Carbide Market Is Anticipated To Grow To $4.49 Billion By 2020
The Global Silicon Carbide Market is expected to reach USD 4.49 billion by 2020, according to a new study by Grand View Research, Inc. Positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent is expected to drive silicon carbide demand. In addition, silicon carbide is an essential element in the manufacturing of semiconductors which is expected to witness significant growth over the next six years. Revitalizing automobile industry, especially in Asia Pacific, is also expected boost the demand for silicon carbide. Read more.

September 28, 2015
In the News: SiC Players are Pushing the SiC Technology Adoption Towards EV/HEV Industry
After several years of delays and questionings' phase, silicon carbide (SiC) technology confirmed its added-value, compared to existing silicon (Si) technologies. Yole Développement announces in its latest report GaN and SiC Devices for Power Electronics Applications (July 2015 edition) the penetration of silicon carbide (SiC), from low to high voltage (600 to 3300 V), in the following market segments: Power Factor Correction (PFC), photovoltaics, diodes with electric and hybrid electric vehicles (EV/HEV), wind, Uninterruptible Power Supplies (UPS) and motor drives. Read more.

September 24, 2015
In the News: Increasing Carrier Lifetimes for High-voltage Silicon Carbide
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs). Such devices are being developed to handle very high voltages beyond 10kV for electric power transmission and distribution… Read more.

September 21, 2015
NEW! 1700V SiC MOSFET from Wolfspeed™
The C2M1000170J features high blocking voltage with low RDS(on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability. Learn more.

September 15, 2015
In the News: SiC Comes of Age
In a recent report from France-based Yole Développement, Pierric Gueguen and colleagues outlined how SiC at last offers added-value compared to existing silicon technologies, following years of doubt and delays. Read more.

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