Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

May 28, 2015
Three-level Inverter SiC MOSFET Power Module from Microsemi
Ideal for uninterruptible power supplies (UPS) applications, this module features VDSS = 1200V and RDSon = 12mΩ @ Tj = 25°C. Benefits include stable temperature behavior, low junction-to-case thermal resistance, and a low-profile package. Learn more.
 

May 26, 2015
NEW! 900V 65 mOhm SiC MOSFET in TO-247-3 Thru-hole Package from Cree
Benefits of the C3M0065090D include higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency. Learn more.
 

May 21, 2015
NEW! 900V 65 mOhm SiC MOSFET in TO-263-7 SMT from Cree
Key features of the new C3M0065090J include:
  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • New low impedance package with driver source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Applications include renewable energy, EV battery chargers, high-voltage DC/DC converters, and switch-mode power supplies
 

May 18, 2015
In the News: Arkansas Researchers Receive Additional $200,000 NSF Grant to Develop High-Temperature Integrated Circuits
The researchers intend to create a prototype of a silicon carbide-based converter that can acquire and process data in harsh environments. They will then evaluate the prototype across temperature variations and test how the converter functions in a harsh, real-world environment by combining the system with ignition sensor technology. Finally, the team plans to generate a commercial feasibility analysis based on projections of the manufacturing costs of a high volume of silicon carbide. Read the full article.
 

May 15, 2015
Richardson RFPD at PCIM Europe 2015
Stop by the Richardson RFPD booth (Hall 9 Booth #415) at this year’s PCIM Europe in Nuremberg, May 19-21. We’ll be featuring:
  • The latest SiC products from Cree and Microsemi
  • The advantages of integrating Cornell Dubilier power film capacitors into your inverter designs
  • Astrodyne/TDI Power's cost-saving EMI/RFI filter offerings
  • Many more of the latest active, passive and thermal products from the industry's leading names
  • Plus – Enter our drawing to win one of 5 free 1200V SiC MOSFET Evaluation Kits. Click here to learn more!
 

May 14, 2015
In the News: Global Silicon Carbide Market to Grow at a CAGR of 15.3% from 2013 to 2019
Transparency Market Research has announced the addition of the "Silicon Carbide (Black SiC, Green SiC) Market for Automotive, Aerospace, Military, Electronics, Healthcare, Steel and Energy Applications - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019" report to their offering. Read more.
 

May 11, 2015
Cree’s 650V SiC Schottky Diodes Available from Stock at Richardson RFPD
Developed in response to the power supply industry's recent demand for components with a nominal voltage rating slightly higher than 600V, Cree’s 650V Cree Z-Rec SiC Schottky diodes enable high-efficiency power systems with improved reliability, simplicity and total cost. They are available in TO-252-2 (DPAK) packages, which are a smaller footprint than many of the comparable diodes currently on the market. Buy now from Richardson RFPD.
 

May 7, 2015
Thesis: Analyzing and Testing of Silicon Carbide Components for Down Hole Oil Applications
Norwegian University of Science and Technology master thesis analyzes the use of SiC in high temperature down hole oil exploitation activities. The inherent properties of wide bandwidth, high breakdown electrical field and high thermal conductivity give commercially-available SiC power devices up to 150°C operational junction temperature. This study produced a review of Cree’s 1200V, 50A six-pack module in a laboratory environment. Learn more.
 

May 4, 2015
Download SIC MOSFET SPICE Models from Cree
To take full advantage of all the benefits of SiC technology, power converters must be redesigned specifically for SiC devices. SiC MOSFETs have significantly different characteristics than silicon devices, and thus require SiC-specific models for accurate circuit simulations. Cree’s behavior-based and temperature-dependent SPICE model delivers accurate simulation results without compromising speed and includes self-heating and transient thermal capabilities. Valid for junction temperatures spanning 25 to 150 degrees C, the model allows power electronics design engineers to reliably simulate the advanced switching performance of Cree C2M products. Download a Cree C2M MOSFET model.
 

April 30, 2015
In the News: SiC & GaN Power Semiconductors Market to Grow 17-fold to $2.5bn in 2023
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications. Read more.
 

April 27, 2015
In the News: Silicon Carbide Market Applications Trends and Segment Forecasts 2012 to 2020
Silicon carbide market is expected to reach over USD 4.50 billion by 2020 owing to high utility in steel and power industry, medical and healthcare, electronics and semiconductor, automotive, aerospace & aviation and military applications. Read more.
 

April 23, 2015
White Paper: Material Science and Device Physics in SiC Technology for High-voltage Power Devices
This article from the Japanese Journal of Applied Physics describes the features and present status of SiC power devices. Important aspects such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are also reviewed. Learn more.
 

April 20, 2015
In the News: Cree's SiC Technology Reduces Solar Power Inverter Size, Weight and Cost
Cree says it has demonstrated that its SiC MOSFET and diode technologies enable what are claimed to be previously unattainable levels of power density in string solar inverter products, yielding ultra-high efficiencies (greater than 99.1% at peak) at one-fifth the average size and weight of existing silicon-based inverter units. Read more.
 

April 16, 2015
White Paper: 10kV SiC-based Isolated DC-DC Converter for Medium Voltage-Connected Solid-State Transformers
This IEEE article presented at APEC 2015 utilizes SiC and solid-state transformer technology for designing a 25kW/50 kHz prototype based on 10kV SiC devices. Learn More.
 

April 13, 2015
VIDEO: APEC 2015 interview with Yole Développement
In this video from APEC 2015, Pierric Gueguen, Ph.D, Yole’s Business Unit Manager for Power Electronics & Semiconductors, highlights the growth expectations for silicon carbide and discusses the characteristics that differentiate the applications that benefit from SiC vs. GaN on SiC technology. Watch now.
 

April 9, 2015
Technical Article: Dynamic and Static Behavior of Packaged SiC MOSFETs in Paralleled Applications
This article from Cree deals with the parallel operation of packaged silicon carbide MOSFETs, including the parameters that affect the static and dynamic current-sharing behavior of the devices and the sensitivity of those parameters to the device junction temperature. Download paper.
 

April 6, 2015
In the News: Strategy Is Key Differentiator as More Efficient GaN, SiC Power Electronics Enter Market
The use of silicon carbide as a semiconductor for mechanical and electrical sensor devices is showing promise for improved operations and safety in harsh working environments, according to new research from Griffith University. Read article.While carmakers could succeed by playing the role of an "integrator," GaN or SiC developers could be a "technology disruptor" offering core technology expertise, says Lux Research… Read article.
 

April 3, 2015
In the News: Study Shows Benefits of SiC for Sensors in Harsh Environments
The use of silicon carbide as a semiconductor for mechanical and electrical sensor devices is showing promise for improved operations and safety in harsh working environments, according to new research from Griffith University. Read article.
 

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