Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

July 2, 2015
Video: Cree Features All-SiC 50kW Solar Inverter at APEC 2015
Mrinal Das, Cree’s power module product marketing manager, highlights SiC’s performance, cost and physical characteristic benefits in this all-SiC 50kW solar inverter that is 1/3 the weight of a silicon solution. Watch video.
 

June 29, 2015
Webinar: Process Solutions for GaN and SiC Power Semiconductor Devices
The potential energy efficiency savings from the adoption of wide band gap power semiconductor devices based on GaN or SiC has led to significant research and development that is now beginning to be realized in commercially available devices. Wednesday, July 8th at 4pm (UK time). Learn more and register.
 

June 25, 2015
Technical Article: Computer Aided Design of Snubber Circuit for DC/DC Converter with SiC Power MOSFET Devices
This article from the Poznan University of Technology Academic Journals presents a computer-aided design of a snubber circuit for a DC/DC converter. A simulation model of the converter with parasitic circuit was designed, and three types of snubber circuits (C, RC, RCD) were investigated in simulation tests. Read the article.
 

June 22, 2015
White Paper: Simulation and Modeling of Silicon Carbide Devices
This doctoral thesis from Friedrich-Alexander University (Erlangen, Germany) aims to explain the mechanisms that control the channel mobility in SiC MOSFETs using numerical simulation and to develop a self-consistent simulation methodology for a description of their electrical behavior. Download pdf.
 

June 18, 2015
In the News: The Problem with Power
As power demands surge, electricity networks are under strain. Can SiC power electronics save the grid, asks Compound Semiconductor. Read article.
 

June 15, 2015
White Paper: High-Efficiency SiC Power Conversion Base Drivers for BJT and Performance Impacts on Series-Resonant Converters
This KTH Royal Institute of Technology doctoral thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented. Read more.
 

June 11, 2015
In the News: Silicon Carbide Market Share, Analysis, Report To 2020
HexaResearch.com has announced the addition of “Global Silicon Carbide Market Analysis And Segment Forecasts, 2012 – 2020″ Market Research report to their database. The SiC market is expected to reach over USD 4.50 billion by 2020 owing to high utility in steel and power industry, medical and healthcare, electronics and semiconductor, automotive, aerospace & aviation and military applications. Read more.
 

June 8, 2015
White Paper: Soft-Switching SiC Interleaved Boost Converter
Paper by M. R. Ahmed, G. Calderon-Lopez, F. Bryan, R. Todd and A. J. Forsyth, School of Electrical and Electronic Engineering, Power Conversion Group, The University of Manchester – and presented at APEC 2015 – confirms the viability of soft switching techniques for SiC converters and suggests that there is significant potential for further increases in switching frequencies. Read more.
 

June 4, 2015
Presentation: Silicon Carbide’s Impact on EV/HEV Chargers and Inverters
Paul Kierstead, Cree’s Director of Marketing, SiC Power Products, gave this presentation as part of Yole Développement’s Power Electronics Market Briefing ("How are hybrid and electric vehicles going to reshape the overall power electronics industry?") at PCIM Europe 2015. Mr. Kierstead’s presentation is now available in pdf format. Please click here to download.
 

June 1, 2015
Phase-leg SiC MOSFET Power Module from Microsemi
The APTMC120AM25CT3AG offers outstanding performance at high frequency operation, direct mounting to heat sink, and low junction to case thermal resistance. Key features include Vdss=1200V, Rds(on) = 25 mOhm max @ Tj = 25 °C, and Id = 105A @ Tc = 25 °C. Learn more.
 

May 28, 2015
Three-level Inverter SiC MOSFET Power Module from Microsemi
Ideal for uninterruptible power supplies (UPS) applications, this module features VDSS = 1200V and RDSon = 12mΩ @ Tj = 25°C. Benefits include stable temperature behavior, low junction-to-case thermal resistance, and a low-profile package. Learn more.
 

May 26, 2015
NEW! 900V 65 mOhm SiC MOSFET in TO-247-3 Thru-hole Package from Cree
Benefits of the C3M0065090D include higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency. Learn more.
 

May 21, 2015
NEW! 900V 65 mOhm SiC MOSFET in TO-263-7 SMT from Cree
Key features of the new C3M0065090J include:
  • New C3M SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • New low impedance package with driver source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Applications include renewable energy, EV battery chargers, high-voltage DC/DC converters, and switch-mode power supplies
 

May 18, 2015
In the News: Arkansas Researchers Receive Additional $200,000 NSF Grant to Develop High-Temperature Integrated Circuits
The researchers intend to create a prototype of a silicon carbide-based converter that can acquire and process data in harsh environments. They will then evaluate the prototype across temperature variations and test how the converter functions in a harsh, real-world environment by combining the system with ignition sensor technology. Finally, the team plans to generate a commercial feasibility analysis based on projections of the manufacturing costs of a high volume of silicon carbide. Read the full article.
 

May 15, 2015
Richardson RFPD at PCIM Europe 2015
Stop by the Richardson RFPD booth (Hall 9 Booth #415) at this year’s PCIM Europe in Nuremberg, May 19-21. We’ll be featuring:
  • The latest SiC products from Cree and Microsemi
  • The advantages of integrating Cornell Dubilier power film capacitors into your inverter designs
  • Astrodyne/TDI Power's cost-saving EMI/RFI filter offerings
  • Many more of the latest active, passive and thermal products from the industry's leading names
  • Plus – Enter our drawing to win one of 5 free 1200V SiC MOSFET Evaluation Kits. Click here to learn more!
 

May 14, 2015
In the News: Global Silicon Carbide Market to Grow at a CAGR of 15.3% from 2013 to 2019
Transparency Market Research has announced the addition of the "Silicon Carbide (Black SiC, Green SiC) Market for Automotive, Aerospace, Military, Electronics, Healthcare, Steel and Energy Applications - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019" report to their offering. Read more.
 

May 11, 2015
Cree’s 650V SiC Schottky Diodes Available from Stock at Richardson RFPD
Developed in response to the power supply industry's recent demand for components with a nominal voltage rating slightly higher than 600V, Cree’s 650V Cree Z-Rec SiC Schottky diodes enable high-efficiency power systems with improved reliability, simplicity and total cost. They are available in TO-252-2 (DPAK) packages, which are a smaller footprint than many of the comparable diodes currently on the market. Buy now from Richardson RFPD.
 

May 7, 2015
Thesis: Analyzing and Testing of Silicon Carbide Components for Down Hole Oil Applications
Norwegian University of Science and Technology master thesis analyzes the use of SiC in high temperature down hole oil exploitation activities. The inherent properties of wide bandwidth, high breakdown electrical field and high thermal conductivity give commercially-available SiC power devices up to 150°C operational junction temperature. This study produced a review of Cree’s 1200V, 50A six-pack module in a laboratory environment. Learn more.
 

May 4, 2015
Download SIC MOSFET SPICE Models from Cree
To take full advantage of all the benefits of SiC technology, power converters must be redesigned specifically for SiC devices. SiC MOSFETs have significantly different characteristics than silicon devices, and thus require SiC-specific models for accurate circuit simulations. Cree’s behavior-based and temperature-dependent SPICE model delivers accurate simulation results without compromising speed and includes self-heating and transient thermal capabilities. Valid for junction temperatures spanning 25 to 150 degrees C, the model allows power electronics design engineers to reliably simulate the advanced switching performance of Cree C2M products. Download a Cree C2M MOSFET model.
 

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