Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

December 13, 2017
In the News: Panelists Call For Better Training In SiC And GaN Design
The Power Electronics Industry Collaborative (PEIC) organised a special session on workforce challenges and opportunities facing the power electronics industry at the IEEE Energy Conversion Congress & Expo (ECCE), held Oct. 1 – 5, 2017 in Cincinnati, OH. Six expert panelists from PEIC member companies and affiliates shared their collective vision for enhanced workforce development initiatives in power electronics. Read more.

December 12, 2017
In the News: Silicon Carbide: On the Road, Not Just on Trial
Recently, Yole Développement released three reports related to the SiC wafer industry—RF Power Market and Technologies 2017: GaN, GaAs and LDMOS; Power SiC 2017: Materials, Devices, Modules and Applications; and Status of the Power Electronics Industry 2017. Read more.

December 8, 2017
On-Demand Webinar: A Cost-effective, Highly Efficient 3-Phase AC/DC Power System with Bi-directional Power Capability
This Engineering360 webinar from Wolfspeed presents an optimized two-level, three-phase 20 kW hardware prototype PFC design using 1 kV SiC MOSFETs. The performance of this SiC-based AC/DC converter is then compared against similarly rated AC/DC converter topologies with primary emphasis on the Vienna rectifier using SJ MOSFETs. Watch on-demand now.

December 5, 2017
In the News: Solar Inverter Consolidation Will Continue: 'Prices Show No Sign of Stabilizing'
"…Wide band-gap switching materials like silicon carbide and gallium nitride (could) provide cost-competitive alternatives in lower-voltage, high-performance applications over the next several years. Beyond that, however, 'there are few technology developments in the pipeline that will result in step-function price declines in the medium term…" Read more.

November 30, 2017
In the News: X-FAB, New Country Organics Unveil Combined $66M Lubbock Expansions, Investments
X-FAB Texas is expanding its production of silicon carbide power devices, making it the world’s first 6-inch silicon carbide foundry, said CEO and President of X-FAB Texas Lloyd Whetzel. The upgrade will create 50 new jobs and a total value-added impact of $7.5 million, according to a news release from LEDA… Read more.

November 29, 2017
In the News: Electronics Demonstrate Operability in Simulated Venus Conditions
Standard electronics used commercially and for planetary exploration are based on silicon semiconductors, which do not operate at Venus temperatures. A team at NASA Glenn Research Center (GRC) has been working to develop high temperature electronics based on silicon carbide (SiC) semiconductors that can operate at Venus temperatures and above. Recently, the team demonstrated that a variety of the world's first moderately complex SiC-based microcircuits (tens or more of transistors) could withstand up to 4000 hours of operation at 500° C. Read more.

November 17, 2017
Online Book: Analysis and Simulation of Electrical and Computer Systems
"Applications of SiC MOSFETs in AC-DC Converters Dedicated for Distributed Generation Systems" opening chapter includes an illustration of the particular features provided by the wide band gap devices, design parameters of the analyzed demonstrators where different types of SiC MOSFETs are considered, and the presentation of experimentally measured efficiency characteristics and current-voltage waveforms. Read more.

November 13, 2017
White Paper: The Effect of Inverter Failures on the Return on Investment of Solar Photovoltaic Systems
This paper’s analysis of failure data shows that the short warranties and reliability concerns associated with solar PV inverters reduce the long-term ROI of residential solar PV systems by up to 10%. Methods to improve the reliability of PV inverters, such as selection of capacitors, inverter topology, and incorporating wide-bandgap semiconductor devices, are presented.
Read more.

November 10, 2017
Technical Article: Exploding the Inverter
Electric racing has introduced a whole new way of thinking about powertrains to many fans. While the battery and the motor may be relatively easy concepts to understand, what on earth is an inverter – and, more importantly, how can it deliver a competitive advantage? Current E sat down with Angus Lyon, head of powertrain at Mahindra Racing, to provide some clarity. Read more.

November 8, 2017
Application Note: Wolfspeed's "Analog Based 2.2 KW High Efficiency CCM Bridgeless Totem Pole PFC"
Download this application note which discusses the use of the latest SiC MOSFETs in new, low-inductance packaging to design a PFC system. When combined with a DC/DC circuit, the system can achieve system-level efficiency suitable for the 80+ titanium standard. Designers of server and telecom power supplies will especially appreciate reaching 80+ titanium efficiency requirements with no additional cost or complexity. Download now.

November 2, 2017
In the News: Jayant Baliga's Quest to Make Silicon-Carbide Power Electronics Succeed
When Jayant Baliga invented the insulated gate bipolar transistor in the 1970s—something for which he won the 2014 IEEE Medal of Honor—it went from prototype to commercial product in about a year and a half. His quest to make silicon carbide a key material for power electronics has taken decades longer… Read more.

October 30, 2017
Technical Article: Wolfspeed SiC MOSFETs Enable Radical Improvements in Efficiency, Power Density and Cost for Three-Phase Industrial PFCs
This article shows designers the improved performance versus cost tradeoff space enabled by 1,000 V SiC MOSFETs and a simple two-level, six-switch three-phase PFC topology. These devices promise to breathe new life into this well-understood simple topology and, with appropriate control systems, mitigate the conventional barriers to achieving high performance at increased switching frequencies with full bidirectional functionality. Read more.

October 27, 2017
In the News: Gallium Nitride Draws Interest for Power Electronics in Future Markets
Gallium nitride, a III/V semiconductor eyed for its performance in high-voltage electronics, is gaining traction for markets pertaining to electric vehicles, continuous sensing and communication for autonomous cars, and military applications. Read more.

October 23, 2017
Technical Article: Impact of Ultra-Low On-Resistance SiC MOSFETs on Electric Vehicle Drive-Train
Three market / technology forces are moving in concert to create an opportunity for SiC MOSFETs to be an enabling technology in the Battery powered Electric Vehicle (BEV). The pull of the developing traction-drive requirements for BEV drive-train, which can utilize SiC to cut inverter losses by ~78 % in the EPA drivecycle, can offer BEV designers increased range or reduced battery costs for the same range. Download now.

October 20, 2017
In the News: New Manufacturing Process for SiC Power Devices Opens Market to More Competition
Researchers from North Carolina State University are rolling out a new manufacturing process and chip design for silicon carbide (SiC) power devices, which can be used to more efficiently regulate power in technologies that use electronics. The process - called PRESiCE - was developed with support from the PowerAmerica Institute funded by the Department of Energy to make it easier for companies to enter the SiC marketplace and develop new products. Read more.

October 16, 2017
White Paper: Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices
This paper includes an overview of the properties of AlGaN that motivate its application to power switching, as well as an analysis of conduction and switching loss mechanisms as a function of AlGaN bandgap for various device types (PiN diodes, Schottky diodes, etc.) These results are then compared to similar metrics for SiC, GaN, and UWBG materials other than AlGaN. Read more.

October 12, 2017
New Series of DC/DC Converters for SiC and IGBT Applications from RECOM
The RxxPxxyyD Series devices feature 6400 VDC isolation and <10 pF isolation capacitance and have been designed to fulfill the demanding requirements of high slew-rate SiC transistor drivers. Learn more.

October 9, 2017
Technical Article: Modeling of Wide Band Gap Devices for Accurate Simulation
Creating accurate models for Wide Band Gap (WBG) power devices representing their complete behavior is vital to the system simulation for ensuring that the simulation results are highly accurate. Read more.

October 4, 2017
Technical Article: Wide-Bandgap Developments—What You Need To Know
Advances in wide bandgap (WBG) power devices are enabling silicon-carbide (SiC) and gallium-nitride (GaN) devices that can operate at higher voltages and temperatures than conventional semiconductor devices. Also, they can switch at faster speeds with lower switching losses. New SiC and GaN solutions and developments are especially taking hold in three fields: data centers, wireless charging, and energy harvesting. Read more.

October 3, 2017
In the News: Funding for Illinois Researchers to Address Advancements in Power Conversion
“…We’ve squeezed every drop of juice out of silicon in the industry,” says John Shen, one of the ARPA-E grant winners and a professor of electrical and computer engineering at the Illinois Institute of Technology on Chicago’s South Side. “So to move forward, to get a higher conversion efficiency, we’re looking into what we call wide bandgap semiconductor materials, the future generation of power semiconductor devices.” Read more.

September 29, 2017
In the News: Wolfspeed Develops All-SiC Power Modules for High Voltage Applications with Assistance from PowerAmerica
With funding assistance from PowerAmerica, SiC device and power module company Wolfspeed has developed first-of-its-kind silicon carbide power modules for 3.3 kV and 10 kV applications. According to the company, this is the first SiC power module at these voltage levels to use exclusively the MOSFET built-in body diode as the anti-parallel rectifier. Read more.

September 25, 2017
Application Note: Design Recommendations for SiC MOSFETs
SiC MOSFETs are coming into prominence in select power switching applications above ½ kV, especially in those that benefit from the high-speed capability of SiC MOSFETs. This application note focuses on optimization for speed to minimize switching losses and to get the full benefit of the devices. Download now.

September 22, 2017
White Paper: Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching and False Turn-On Conditions
Transforming the device level advances of SiC technology (lower on-state losses, lower parasitic capacitances and potentially higher switching frequencies) into smaller and more efficient converters present numerous challenges. One of the challenges is understanding and optimizing the more rapid switching waveforms, including predicting and managing parasitic oscillations, switching losses and electromagnetic interference (EMI)… Read more.

September 18, 2017
September 20th Webinar: The Chips are on the Table, Now What? SiC Optimization from the Chip Up
SiC MOSFETs and diodes are gaining market share in the power electronics industry. Many designs already utilize discrete SiC devices. However, the transition from discrete devices to higher power modules is not always easy. This Wolfspeed presentation, presented by IEEE GlobalSpec, focuses on the proper utilization of SiC devices in power modules and higher power applications. Learn more and register now.

September 14, 2017
In the News: UA, Cree Get Nearly $4 Million in Federal Funding to Improve Electric Power Devices
The University of Arkansas and Cree Fayetteville will receive more than $4 million from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) to develop more efficient electric power converters. Read more.

September 11, 2017
Research Report: SiC Power Electronics for Variable Frequency Motor Drives
Variations in manufacturing expertise, yields, and access to existing facilities currently have a greater impact on regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules than core country factors such as labor and electricity costs. Read more.

September 7, 2017
White Paper: Designing Robust Transistor Circuits with IGBTs and SiC MOSFETs
This RECOM white paper goes beyond the usual transistor specification considerations and looks at the driver circuit as a significant contributor to the robustness of the final design. Learn more.

September 5, 2017
In the News: Following Failed Infineon Deal, Cree Plots Wolfspeed Factory Expansion
CEO Chuck Swoboda told analysts increased demand from the electric vehicle and battery storage sectors “is quickly bringing silicon carbide to the mainstream” and putting major pressure on the business. Read more.

August 31, 2017
In the News: Microsemi Awarded Contract to Accelerate Adoption of Silicon Carbide Technology as New Member of PowerAmerica
Company to develop state-of-the-art 1.7 kV and 3.3 kV SiC MOSFETS and diodes as part of PowerAmerica Institute's $70 million backing from the U.S. Department of Energy over five years. Read more.

August 28, 2017
White Paper: 15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers
This paper reviews the characteristics of 15 kV SiC MOSFET and offers a comprehensive guideline of implementing this device in practical MV power conversion scenarios such as AC-DC, DC-DC and AC-AC in terms of topology selection, loss optimization and thermal management. Read more.

August 24, 2017
Technical Article: Impact of Ultra-Low On-Resistance SiC MOSFETs On Electric Vehicle Drive-Train
Three market / technology forces are moving in concert to create an opportunity for SiC MOSFETs to be an enabling technology in the Battery powered Electric Vehicle (BEV). The pull of the developing traction-drive requirements for BEV drive-train, which can utilize SiC to cut inverter losses by ~78 % in the EPA drivecycle, can offer BEV designers increased range or reduced battery costs for the same range. Read more.

August 23, 2017
Application Note: Design Recommendations for SiC MOSFETs
SiC MOSFETs are coming into prominence in select power switching applications above ½ kV, especially in those that benefit from the high-speed capability of SiC MOSFETs. This Microsemi application note focuses on optimization for speed to minimize switching losses and to get the full benefit of the devices. Read more.

August 18, 2017
In the News: Kettering University Researchers Developing Next Generation of EV Battery Chargers
Kettering recently concluded its research with PowerAmerica, a public-private partnership between industry, the U.S. Department of Energy and academia, including 11 university partners. The goal of Power America is to accelerate the adoption of advanced semiconductor products made with Silicon Carbide (SiC) and Gallium Nitride (GaN) into a wide range of products. Read more.

August 16, 2017
In the News: Wolfspeed Reference Design for SiC MOSFETs Achieves 80+ Titanium Rating
Wolfspeed recently developed a comprehensive reference design that demonstrates the implementation of a totem-pole PFC topology in a 2kW bridgeless power supply. At 230V redundant operation the reference design can easily exceed the 80+ Titanium standards. The design achieved actual results of 98.7% peak efficiency at half load and 98.55% efficiency at full load. Read more.

August 10, 2017
In the News: SiC and GaN vs. IGBTs: The Imminent Tug of War for Supremacy
Automotive, industrial, and other applications that require smaller size, lighter weight, and more efficient operation are increasingly looking to SiC and GaN solutions. Read more.

August 7, 2017
In the News: ADI's Gate Drivers Enable Higher Switching Speeds
Analog Devices Inc. has launched the ADuM4120 and ADuM4121 series of small form factor isolated gate drivers that are designed for power switch technologies, such as silicon carbide (SiC) and gallium nitride (GaN), which require higher switching speeds and system size constraints. Read more.

July 31, 2017
Now available: Surface-mount version of 1200 V, 75 mOhm MOSFET from Wolfspeed
The new C3M0075120J is the surface-mount version of Wolfspeed’s 1200 V, 75 mOhm MOSFET C3M0075120K. Like the 4L-TO247, the surface-mount device includes a Kelvin-source pin to help minimize gate-ringing and reduce system losses. Learn more.

July 17, 2017
In the News: Compound Semiconductor Market Growing At Over 8 Percent CAGR
Reports include a prediction that the SiC market will grow steadily at a CAGR of over 14 percent between 2017 and 2021, driven by the growing demand for power inverters for electric vehicles. Read more.

July 10, 2017
In the News: John Deere Successfully Demos SiC-Based Inverter in Heavy Duty Construction Vehicle
Through PowerAmerica, John Deere has formed a collaboration with researchers from the Department of Energy National Renewable Energy Laboratory to develop a 200 kW 1050 VDC silicon carbide-based inverter. The inverter will convert vehicle engine power into electrical power needed for hybrid motors in heavy duty construction vehicles. Read more.

July 7, 2017
Now Available from Microsemi: 1200 V Boost Chopper & Buck Chopper SiC MOSFET Power Modules
The APT30SM120JCU2 (boost) and APT30SM120JCU3 (buck) are built with SiC MOSFETs and SiC Schottky diodes, and therefore combine the advantages of both, including low RDS(on), high-temperature performance, zero reverse recovery, zero forward recovery, temperature-independent switching behavior, and positive temperature coefficient on VF.

July 5, 2017
Webinar Now Available On-Demand
Last week’s Wolfspeed webinar on achieving high-efficiency power supplies (80+ titanium) without increasing complexity or cost is now available on-demand. Highlights include:
  • Learn how to enable server and telecom power supplies to reach 80+ titanium efficiency requirements with no additional cost or complexity
  • Review a full reference design example of how to implement Totem pole PFC using SiC MOSFETs
  • Understand the benefits of low-inductance discrete SiC MOSFET packaging and Kelvin-contact
  • See the latest SiC MOSFETs with low conduction losses, switching losses and Qrr, enabling new, simplified power conversion topologies

See archived posts.

 
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