Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

June 23, 2016
In the News: NREL Readies New Wind-turbine Drivetrain for Commercialization
ENGINEERS AT NREL have completed tests on an unusual wind-turbine drivetrain that is the collaboration of several companies. The design sports a single-stage gearbox designed by Romax Technology, a medium-speed permanent-magnet generator, and a power converter developed by DNV Kema with high-efficiency modules developed by Cree (now Wolfspeed). The goal of the project’s first phase, which began in 2011, was to design an advanced drivetrain that could improve reliability and efficiency, reduce the cost of wind energy, and scale to larger power ratings… Read more.
 

June 22, 2016
White Paper: Using Advanced SiC Devices for Smaller, Cooler and more Efficient Drivetrain & Charging Systems
As the market demand for electric vehicles continues to increase — driven in part by government regulations on fuel efficiency and CO2 emissions, social awareness, and the overall trend toward greener transportation options — a growing number of automotive manufacturers are incorporating the latest power electronics technology in their designs to improve overall performance, increase efficiency, and reduce cost, weight, and complexity. Read more.
 

June 16, 2016
Microsemi Expands Irish Site as Silicon Carbide Takes-off
Microsemi is expanding its site in Ennis, in County Clare, Ireland, for the characterization of the latest Silicon Carbide (SiC) devices as the popularity grows for power designs. Read more.
 

June 14, 2016
In-stock now: Vincotech’s fastPack 0 SiC Power Module
The PC094PB065ME01 fastPACK 0 SiC is a faster, cooler, and even more efficient power module designed for switching frequencies up to 400 kHz. It features a fast-switching 900V SiC MOSFET that outperforms 1200V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650V MOSFETs. Learn more.
 

June 13, 2016
New 1.2kV, 3.6 mOhm All-SiC High-Performance, Half-Bridge Module C2M MOSFET and Z-RecTM Diode from Wolfspeed
The CAS325M12HM2 half-bridge and gate driver combination achieves efficiencies of over 98% and features ultra-low loss, low (5 nH) inductance, ultra-fast switching operation, and zero reverse recovery current from diode. Learn more.
 

June 2, 2016
New Simulation Tool from Wolfspeed
SpeedFit™ is Wolfspeed’s new, free simulation tool dedicated solely to simulating and evaluating the performance of silicon carbide (SiC) power devices. Learn more.
 

June 1, 2016
Thesis: Design and Control of a Bidirectional Dual Active Bridge DC-DC Converter to Interface Solar, Battery Storage, and Grid-Tied Inverters
This thesis aims to demonstrate the performance benefits of SiC MOSFETs in the dual active bridge topology. Modern modeling techniques are also explored and used to develop an enhanced digital controller, implemented in a DSP, for steady state reference tracking and load disturbance rejection. Read more.
 

May 12, 2016
New SiC Short Form Catalog from Microsemi
In addition to producing discrete SiC semiconductors, Microsemi has developed a variety of SiC and mixed semiconductor power modules. These modules, incorporating the latest in available technologies, offer rugged operation as well as high efficiency. Microsemi has a wide ranging interest in partnering with customers to provide the best SiC solution for a specific application. Download pdf version of catalog.
 

May 11, 2016
In the News: US Air Force Offering $13.5M Cooperative Agreement to Develop Large-diameter SiC Substrates and Epi
The Air Force need for sensors extends from DC to the radio-frequency spectra focusing on microwave through sub-millimeter wave (300MHz–300GHz). Exploitation of homo/hetero-epitaxial devices fabricated on SiC holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military RF and power management and distribution components… Read more.
 

May 4, 2016
1200V, 32A, 80mΩ SiC Power MOSFET
Microsemi's APT40SM120J features fast switching with low EMI/RFI, low RDS(on), ultra-low Crss for improved noise immunity, and low gate charge. It is suitable for PFC and other boost converters, buck converter, two- and single-switch forward converter, flyback converter, and inverter applications. Learn more.
 

May 4, 2016
Visit Richardson RFPD at Stand #9-415 at PCIM Europe
Features at our stand will include:
  • A drawing to win one of Wolfspeed’s new 900V SiC MOSFET evaluation kits
  • Microsemi’s new 700V SiC MOSFET family
  • The latest gate drive solutions from Power Integrations
  • Vincotech’s ultra-compact and bookshelf converter modules and 900V SiC MOSFET module
  • New SiC reference designs and SiC power supplies
  • Recom’s new DC/DC converters for SiC MOSFET drivers
  • Passive products, from Cornell Dubilier, Astrodyne, Ohmite and Kendeil
Learn more.
 

April 14, 2016
Vincotech Solutions to Speed-up Your Applications
fastPACK 0 SiC - a faster, cooler, and even more efficient power module designed for switching frequencies up to 400 kHz. Featuring a fast-switching 900V SiC MOSFET that outperforms 1200V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650V MOSFETs. Learn more.
 

April 12, 2016
In the News: Is Only Full SiC the “Real“ SiC?
SiC Schottky diodes almost completely eliminate adverse reverse-recovery effects found in Si devices, reducing IGBT switching losses by up to 60% using fast IGBT devices in hard switched conditions. By combining Silicon and SiC chips in the same package, performance improvements can be achieved at medium power levels while using cheaper wide band gap material. Read more in the April issue of Bodo’s Power Systems, starting on page 14. (Login or free registration required.)
 

April 8, 2016
In-Stock Now: Vincotech flow 3xPHASE-SiC (1200 V / 80 mΩ) for Solar Inverter, Charger and Power Supply Applications
The 10-PZ126PA080MR-M909F28Y features SiC-power MOSFETs and Schottky diodes, 3-phase inverter topology with split output, improved switching behavior, ultra-low inductance with integrated DC capacitors, a switching frequency >100 kHz, and temperature sensor. Learn more.
 

April 7, 2016
Updated: Silicon Carbide Product Selection Guide from Richardson RFPD
Download our updated SiC Selection Guide, featuring our complete portfolio of SiC-focused products from industry-leading suppliers, including Microsemi, Powerex, Vincotech and Wolfspeed. Download pdf now.
 

March 31, 2016
White Paper: High Voltage and Large Current Dynamic Test of
SiC Diodes and Hybrid Module

Abstract: High voltage and large current dynamic test for SiC diodes and hybrid module was studied. Then high voltage dynamic test for 1700V-25A 4H-SiC junction barrier schottky (JBS) diodes and high current dynamic test for a 1700V-200A half-brige SiC hybrid module were performed. With the change of test conditions, such as driving resistance and load inductance, dynamic parameters have some variation. The reverse recovery time of SiC diode and swich on/off time of SiC hybrid module under test is between 20ns to 200ns. The test got a high accuracy. These devices are very suitable for high frequency applications. Read more.
 

March 28, 2016
Meet Wolfspeed™, A Cree Company
Cree has achieved global renown as a leader in wide bandgap, SiC and GaN-based electronics for Power and RF applications. With the creation of Wolfspeed, it is poised to liberate the world’s electronics systems from the constraints of silicon with the fastest, smallest, lightest and most efficient semiconductor products on the planet. Read more.
 

March 18, 2016
Market Report: Silicon Carbide Market Analysis By Product, By End-use And Segment Forecasts To 2020
The Global Silicon Carbide Market is expected to reach USD 4.49 billion by 2020. Positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent is expected to drive silicon carbide demand. In addition, silicon carbide is an essential element in the manufacturing of semiconductors which is expected to witness significant growth over the next six years. Revitalizing automobile industry, especially in Asia Pacific, is also expected boost the demand for silicon carbide. Read more.
 

March 16, 2016
In the News: Inside the Super-Small, High-Efficiency Solar Inverters of Google’s Little Box Challenge
GaN and SiC semiconductors and novel designs pack a game-changing power density. Can they compete on cost and at scale? Read more.
 

March 11, 2016
In the News: Sandia Researchers Search for More Powerful
Semiconductor Materials

Excerpt: “Wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) allow devices to operate at much higher voltages, frequencies, and temperatures than the conventional materials, so more powerful, cheaper, and more energy-efficient electrical conversion systems can be built.” Read article.
 

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