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Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.
August 28, 2014
Microsemi 650V SiC/Si NPT Hybrid Discretes are Cost-effective Choice over MOSFETs
Richardson RFPD is stocking three new 650V non-punch through (NPT) IGBTs designed to replace more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz. Available in 45A and 70A current ratings, these 650V SiC/Si hybrid discrete join Microsemi’s 1200V SiC/Si NPT IGBTs previously introduced. Learn more.
 

August 26, 2014
News: SiC Power Electronics Can Slash $6,000 From Cost of Tesla Model S
New research reports that wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early as 2020. Learn more.
 

August 20, 2014
Analysis Touts Benefits of Silicon Carbide
The excellent properties of Sic have been playing important roles in Chinese society development and construction. This recent article highlights the “revolutionary change” SiC is having in the China semiconductor market. Learn more.
 

August 18, 2014
New, Lower Pricing on Microsemi SiC Schottky Diodes
Microsemi has announced a reduction of at least 25% on its line of 1200V SiC diodes. The complete line of SBDs at 10A, 20A and 30A are available from Richardson RFPD. Learn more.
 

August 14, 2014
New! 650V, 20A Silicon Carbide Schottky Diode from Cree
The CVFD20065A Z-Rec® rectifier features low forward voltage (Vf = 1.35V @ 25 ºC) and is available in a compact TO-220 package.
Learn more.

 

August 11, 2014
Research News: Advanced Dielectric Film Growth Technique for Next Generation Power Devices
A research group from the University of Tokyo Graduate School of Engineering report on a novel dielectric film growth technique which improves the performance of SiC power devices.
Learn more.

 

August 8, 2014
Technical Paper Highlights Use of SiC in Aircraft Application
In a More Electric Aircraft, there is a need to integrate power electronics with the starter generator system in hostile engine environments. This paper describes a project involving a 50kVA SiC-based high temperature bi-directional converter that provides the power conversion for the starter generator system at 200 °C, which can be directly mounted on the engine compartment. The converter is a three phase PWM active rectifier, based on a SiC MOSFET. Learn more.
 

August 7, 2014
New! Microsemi 1200V, 32A SiC power MOSFET in SOT-227 Package
The Microsemi APT40SM120J features best-in-class RDS(on) v. temperature, ultra-low gate resistance for minimizing switching energy loss and superior maximum switching frequency all in a SOT-227 package. Learn more.
 

August 4, 2014
IEEE Paper Highlights Improved Efficiency of SiC MOSFETs in 3.3kW EV Charger Application
An on-vehicle battery charger (OBC) for plug-in hybrid electric vehicles and battery electric vehicles is developed for the purpose of measuring the performance of the PFC boost utilizing different switching power devices. With the SiC DMOSFET at 200kHz switching frequency, the measured maximum power conversion efficiency of the PFC boost front-end converter is 97.7%. The full OBC efficiency is 94.7%. Learn more.
 

July 31, 2014
News: New CSR Zhuzhou IGBT Production Plant Operated by Dynex
Chinese semiconductor manufacturer, Zhuzhou CSR Times Electric Co, has inaugurated a $240m IGBT (insulated gate bipolar transistor) production plant – said to be the first of its kind in China, and the second worldwide – incorporating technology developed by its UK subsidiary, Dynex Semiconductor. Learn more.
 

July 29, 2014
Cree SiC Power Design Efforts Could Be Worth $1 Million USD
The Little Box Challenge is a design contest presented by Google and the IEEE Power Electronics Society to spur innovation in power inverter design with a $1 million USD prize to the person or team who can achieve the highest power density. Learn more.
 

July 21, 2014
News: New York Power Electronics Manufacturing Consortium Highlights
Use of SiC
A new consortium in which the state of New York will partner with over 100 other companies, universities and public authorities will focus on the development and manufacture of the next generation of Silicon Carbide and other materials used on semiconductors. All NY-PEMC partner companies will have access to state-of-the-art 6” SiC wafers developed and produced there and a baseline process flow where they can make their own enhancements in preparation for high volume, cost effective manufacturing. Learn more.
 

July 24, 2014
Video: High-performance SiC-based Plug-in Hybrid Electric Vehicle
Battery Charger
This video highlights Cree’s participation with Arkansas Power Electronics International, Toyota, Oak Ridge National Labs, the University of Arkansas and government agency ARPA-E on a SiC-based battery charger featuring power capability of 6kW, 95%+ efficiency and ultra-high power density of 5kW/L and 3.8kW/kg. The new Level 2 isolated on-board vehicular battery charger uses SiC power devices for application in electric vehicles and plug-in hybrid electric vehicles. View here.
 

July 17, 2014
Full SiC & Hybrid SiC IGBTs from Powerex Feature Low Profile Design
Powerex packages SiC MOSFETs and Schottky barrier diodes from leading suppliers into high-performance, all-SiC modules—or with high-frequency silicon IGBTs into hybrid Si/SiC modules. The new low-profile split dual package features low inductance and either a copper or AlSiC baseplate for high thermal cycling applications. Learn more.
 

July 14, 2014
Cree Dual Channel SiC MOSFET Driver Available from Stock
The CGD15HB62P half bridge gate driver is designed for use with 1200V SiC MOSFET modules and has been optimized for use with Cree’s CAS300M12BM2 62 mm module. Learn more.
 

July 10, 2014
New 2nd-Generation Z-FET® from Cree!
The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET in a TO-247-3 package. Benefits include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability. Learn more.
 

July 7, 2014
This week at SEMICON West—Wide-Bandgap Power Electronics: A Path Toward CO2 Emission Decrease
Jean Christophe-Eloy, president and CEO of Yole Développement, will chair a session on July 10th to discuss the positive impact of CO2 emissions based on the power conversion efficiency of systems using SiC and GaN. Yole estimates wide bandgap (WBG) devices are expected to generate business exceeding $1 billion USD by 2020. Learn more.
 

July 3, 2014
New! 1200V, 40A SiC MOSFET from Microsemi
The APT40SM120B is part of a new family of SiC MOSFETs developed using Microsemi’s in-house SiC fabrication capabilities. The 80mΩ device is offered in a TO-247 package and features best-in-class RDS(on) v. temperature, as well as ultra-low gate resistance for minimizing switching energy loss. Learn more.
 

July 2, 2014
Download Our Latest SiC Products Brochure!
New Silicon Carbide Technology selection guide highlighting our offering of SiC Schottky Diodes, MOSFETs and SiC modules from Cree, Microsemi, Powerex and Vincotech. Learn more.
 

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