Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

August 20, 2015
Podcast: Paultre on Power - Dr. Alex Lostetter and John Palmour of Cree on the APEI Buy and the Power Semi Industry
Normally relatively conservative, the power industry is in flux due to wide-bandgap semiconductors and the guests from Cree explain some of the challenges and opportunities involved. Listen now.

August 17, 2015
In the News: Creating Circuits for the Venus Rover Program
Ozark Integrated Circuits Inc. will use grants to design complex, silicon-carbide-based integrated circuits that can operate on the surface of Venus, where the temperature can reach 500 degrees Celsius – 932 degrees Fahrenheit… Read more.

August 13, 2015
Technical Article: Opening Windows for Silicon Carbide Junction Termination Extensions
Companies keen to commercialize SiC for high-voltage power applications need production flows that are robust against process variation. This article attempts to improve the effectiveness of junction termination extensions across a range of parameters. Read more.

August 10, 2015
Cree Demonstration Board for a Single-end Flyback Converter Design
The CRD-060DD12P is a Cree demonstration board for a single-end Flyback converter design with a commercially available 1700V Silicon Carbide (SiC) MOSFET to replace conventional two-switch Flyback converter for high voltage input auxiliary power supply of three phase applications. Learn more.

August 6, 2015
Download SIC MOSFET SPICE Models from Cree
To take full advantage of all the benefits of SiC technology, power converters must be redesigned specifically for SiC devices. SiC MOSFETs have significantly different characteristics than silicon devices, and thus require SiC-specific models for accurate circuit simulations. Cree’s behavior-based and temperature-dependent SPICE model delivers accurate simulation results without compromising speed and includes self-heating and transient thermal capabilities. Valid for junction temperatures spanning 25 to 150 degrees C, the model allows power electronics design engineers to reliably simulate the advanced switching performance of Cree C2M products. Download a Cree C2M MOSFET model.

August 3, 2015
Podcast: Paultre on Power - Paul Kierstead of Cree on the availability of SiC MOSFETs
Paul Kierstead of Cree talks to Alix Paultre of Power Systems Design about their latest Silicon Carbide (SiC) power solutions at PCIM 2015. Already acknowledged as a next-gen replacement for IGBTs and other heavy-duty industrial devices, SiC is also tilting at traditional MOSFETs with a family of new devices. Cree recently unveiled the industry’s first 900V MOSFET platform, optimized for high-frequency power electronics applications such as renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies. Listen now.

July 30, 2015
White Paper: Material Science and Device Physics in SiC Technology for High-voltage Power Devices
This article from the Japanese Journal of Applied Physics describes the features and present status of SiC power devices. Important aspects such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are also reviewed. Learn more.

July 27, 2015
Updated Silicon Carbide Technology Overview Available
Includes Richardson RPFD’s SiC offerings from franchised vendors, an overview of SiC test/evaluation products, a package style selection guide, and more. Download now.

July 23, 2015
650V & 1200V SiC/Si Hybrid NPT IGBTs in Stock!
Microsemi has added three new 650V non-punch through (NPT) IGBTs with integrated zero recovery, low leakage, SiC anti-parallel diodes, to its offering that previously included only 1200V models. Available in 45A and 70A current ratings, these leading edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz. Leveraging Power MOS 8™ technology, the 650V products offer the industry’s best loss performance – approximately 8% better than the closest competing IGBT. Learn More.

July 20, 2015
VIDEO: APEC 2015 interview with Yole Développement
In this video from APEC 2015, Pierric Gueguen, Ph.D, Yole’s Business Unit Manager for Power Electronics & Semiconductors, highlights the growth expectations for silicon carbide and discusses the characteristics that differentiate the applications that benefit from SiC vs. GaN on SiC technology. Watch now.

July 16, 2015
Quick Link: SiC Tech Hub New Products
The New Products page on the SiC Tech Hub offers a snapshot of a handful of the newest SiC devices offered by Richardson RFPD. Current featured products include a SiC MOSFET eval kit from Cree, SiC MOSFET power modules from Microsemi, and 1200V SiC MOSFET modules from Vincotech. Learn more.

July 13, 2015
Technical Article: Dynamic and Static Behavior of Packaged SiC MOSFETs in Paralleled Applications
This article from Cree deals with the parallel operation of packaged silicon carbide MOSFETs, including the parameters that affect the static and dynamic current-sharing behavior of the devices and the sensitivity of those parameters to the device junction temperature. Download paper.

July 9, 2015
In the News: The Next Opportunity for Utility PV Cost Reductions: 1,500 Volts DC
Excerpt: “As these regulatory barriers dissolve, manufacturers will begin to introduce 1,500 Vdc products in volume. We expect this to begin in mid-2015 and continue into 2016. The market will initially target large utility projects with central inverters, but we expect three-phase string inverters to follow soon after. This will be further enabled by the implementation of next-generation silicon carbide devices that allow for higher switching frequencies and greater power densities.” Read more.

July 6, 2015
Gate Driver In-Stock for Cree’s 1700V SiC Module
Now available from Richardson RFPD, the PT62SCMD17 is a dual 1700V SiC MOSFET driver designed for driving Cree’s CAS300M17BM2 62mm, 1700V SiC power module. Learn more.

July 2, 2015
Video: Cree Features All-SiC 50kW Solar Inverter at APEC 2015
Mrinal Das, Cree’s power module product marketing manager, highlights SiC’s performance, cost and physical characteristic benefits in this all-SiC 50kW solar inverter that is 1/3 the weight of a silicon solution. Watch video.

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