Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

February 22, 2017
In the News: Prolonged Silicon Carbide Integrated Circuit Operation in Venus Surface Atmospheric Conditions
The prolonged operation of semiconductor integrated circuits (ICs) needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the
∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks) electrical operation of two silicon carbide (4H-SiC) junction field effect transistor (JFET) ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus. Read more.
 

February 15, 2017
In the News: Wolfspeed Extends 650/1200V Silicon Carbide Diode Specs
The 650V 12A C3D12065A and 16A C3D16065A Z-Rec SiC Schottky diodes are supplied in TO-220-2 packages, and are targeted at PFC boost stages in server power supplies, especially next-generation systems rated for 1100W, 1600W, 2000W, and 2400W with low-line or high-line inputs. They are also available as bare die. The 650V 2x15A C3D30065D Z-Rec diodes are supplied in TO-247-3 packages, and are best suited for rectification applications in 3-5kW power supplies. Also supplied in TO-247-3 packages, the 1200V 2x7.5A C4D15120D Z-Rec diodes are ideal for use in PV inverters and on- and off-board chargers. Read more.
 

February 2, 2017
White Paper: A Bidirectional DC-DC High Frequency Dual-Half Bridge Series Resonant Converter: Design, Simulation and Experimental Results
This paper looks at a bidirectional high frequency dual-half bridge series resonant converter (DHBSRC) designed for energy storage application. Two half-bridges are connected through LC resonant tank and HF transformer. Power flow of the converter is controlled using phase shifted gating scheme with 50% duty cycle. Operating principle, analysis and design of DHBSRC are presented in the report. This project also looks at the benefit of using new generation SiC MOSFETs that have many promising properties like larger bandgap and higher thermal conductivity, which predicts lower conduction losses and higher efficiency of converter. Download paper.
 

January 26, 2017
White Paper: Forward Current-voltage Characteristics Simulation of 4H-SiC Silicon Carbide Schottky Diode for Power Electronics
Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n≈1.1 at low temperature ∼300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode. Download paper.
 

January 23, 2017
In the News: Power Views – The Future of Electricity
From the shop floor to equipment performance, electrification is in expansion. While the benefits of electrification are already being felt, the development in the industrial world must be accelerated. Read more.
 

January 20, 2017
In the News: Wolfspeed Introduces New SiC MOSFET for EV Drive Trains
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 900V, 10mΩ MOSFET rated for 196 A of continuous drain current at a case temperature of 25°C. This device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design. Read more.
 

January 16, 2017
White Paper: Efficiency and Current Harmonics Comparison Between SiC and Si Based Inverters for Microgrids
In this paper, the power loss and current harmonics of both Si-IGBT and SiC-MOSFET based inverters are investigated and compared in low voltage (LV) microgrid applications, respectively. And the experimental results show that the application of SiC devices greatly increases the energy efficiency and improves the power quality in microgrid. Read more.
 

January 12, 2017
Available Now: Wolfspeed SiC 20 kW LLC Reference Design
The CRD-20DD09P-2 makes it easy to evaluate converter level efficiency and power density gains when using Wolfspeed’s new 1000 V, 65 mΩ SiC MOSFETs in a 4L-TO247 package in a full bridge resonant LLC circuit. It also can be used to evaluate the integration of a SiC-based isolated DC/DC stage in a larger multi-stage prototype system, like a fast DC charger for electric vehicles. Learn more.
 

January 9, 2017
New Microsemi 1200V SiC MOSFET
The APT80SM120B features low conduction losses at high temperature, low switching losses, high short circuit withstand ratings, low gate resistance, and patented SiC technology. Microsemi’s portfolio of 700V, 1200V and 1700V SiC MOSFETs improve system efficiency and reliability, and they offer numerous advantages over silicon superjunction MOSFETs.
Learn more
.
 

December 21, 2016
Wishing you all a Happy Holiday Season and a Joyous New Year
We will return with more SiC news in January 2017!
 

December 15, 2016
Technical Article: Silicon-Carbide Based Uninterruptible Power Supplies: A technological leap in efficiency and reliability
Summary: SiC technology is an innovation that will establish a new trajectory for small devices and power electronics. Benefits include: increased system efficiency, lower cooling system requirements, operation at higher temperatures, and higher power density. With the integration of SiC based technology into UPS, the goals of data center operators to operate at higher efficiencies, maximize floor space, and reduce operating costs across the facility are being achieved. Read more.
 

December 12, 2016
In the News: Wolfspeed Wins 2016 R&D 100 Award for SiC-based Underhood Inverter for Electric Vehicles
Wolfspeed's high-temperature WBG underhood inverter was developed in response to the need for smaller, lighter and more efficient systems with higher power density in the electric vehicle market, and in collaboration with the Toyota Research Institute of North America, the US National Renewable Energy Laboratory (NREL), the University of Arkansas National Center for Reliable Electric Power Transmission, and the Department of Energy (DoE) Vehicle Technologies Office. Read more.
 

December 8, 2016
In the News: Silicon Carbide Technology Preferred Over Traditional Silicon Technology
Improvement in power conversion by using silicon carbide will increase demand for the technology in developing countries, says Allied Market Research. Read more.
 

December 6, 2016
White Paper: The Spice Dynamic Behavioral Electro-thermal Model of Silicon Carbide Power MOSFET
This paper presents an electro-thermal behavioral model (ETM) Silicon Carbide (SiC) Power MOSFET developed by SPICE. This model is based on the MOS level 1 of SPICE model wherein the phenomena characteristic of the static and dynamic behavior which are dependent on self-heating and junction temperature are included and represented by ABM facilities (Analog Behavioral Models) of Spice. Download paper.
 

December 1, 2016
In the News: Silicon Carbide Chips Kickstart a New Era in Power Electronics
SiC devices—both diodes and transistors—are making inroads in automotive, energy, and industrial environments amid high-power handling capability and power loss savings.
Read more.
 

November 28, 2016
In the News: First 1000V silicon carbide MOSFET
Wolfspeed has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size, in applications such as efficient electric vehicle fast battery chargers. Read more.
 

November 23, 2016
Happy Thanksgiving to our customers, colleagues and friends in the U.S. We’ll be back next week with more SiC Tech Hub updates.
 

November 21, 2016
In the News: Low-cost HV SiC Switches Could Enhance Drives
Researchers in the US have created a high-voltage, high-frequency silicon carbide (SiC) power switch that could cost about half as much as conventional HV SiC power switches. They say that their device could help to cuts the costs and boost the performance of applications such as medium-voltage drives, solid-state transformers, HV transmission systems and circuit-breakers. Read more.
 

November 16, 2016
In the News: A Better Material Has Now Been Discovered for Use
in the Solar Industry

Scientists at GE’s Global Research Center have discovered a material that could revolutionize the solar industry. It was first discovered in an attempt to produce artificial diamonds, but now researchers have found that silicon carbide (SiC) can actually replace silica that is currently used throughout the solar industry. Read more.
 

November 14, 2016
Wolfspeed SpeedFit Design Simulator™
Launched earlier this year, Wolfspeed’s SpeedFit is an online circuit simulation tool to help accelerate SiC device evaluation and adoption. It was developed using Plexim’s PLECS web-based simulation platform, and it is the industry’s only such tool that is 100% dedicated to simulating and evaluating SiC power devices. Learn more.
 

November 10, 2016
In the News: A Cheaper High Voltage SiC Switch?
Researchers at NC State University say 15kV Super-Cascode switch could cost around half conventional high voltage SiC solutions. Read more.
 

November 8, 2016
Wolfspeed LTspice and PLECS Models
If designing SiC into your systems is a journey, Wolfspeed models are your passport. Complete this form to receive diode, MOSFET and/or module models immediately.
 

November 1, 2016
In the News: Wolfspeed Delivers Industry’s First 1000V SiC MOSFET
Wolfspeed has introduced a 1000V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system-size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component-count while achieving more than 3x increase in power density and a 33 percent increase in output power. Read more.
 

October 31, 2016
Silicon Carbide Reference Designs
Reduce design-cycle time and create rugged and reliable system designs with these Wolfspeed SiC reference designs that demonstrate proper design techniques when implementing Wolfspeed SiC products. Learn more.
 

October 28, 2016
In the News: Wide-Bandgap Boosts EVs
In 2010, the U.S. Department of Energy set a goal for electric vehicle inverters to be boosted from 4.1 kW/L to 13.4 kW/L by 2020. Now, a 12.1-kW/L inverter has cleared the way to meeting or beating that goal. By using wide-bandgap materials — namely silicon carbide — North Carolina State University achieved the more-than-tripled performance and has a prototype to prove it… Read more.
 

October 24, 2016
Video: Overview of Wolfspeed SiC Diodes
Wolfspeed has the industry’s broadest portfolio, enabling everyone to achieve highest system efficiency, power density and reliability. Learn more about Wolfspeed’s Z-Rec® diodes and more. Watch now.
 

October 10, 2016
Video: Paralleling SiC Schottky Diodes
One of the benefits of Wolfspeed SiC diodes is that they can be paralleled for high currents without having to be derated. Watch now.
 

October 5, 2016
In the News: Global Technology Suppliers Raise Inverter Output
Using New Materials

As competition intensifies between inverter suppliers, GE has launched a new 1,500-volt DC central inverter with power devices made from silicon carbide, which can increase the efficiency of utility-scale PV power plants to 99% weighted power conversion efficiency… Read more.
 

October 3, 2016
Video: SiC Converters in the Lab
Convinced of the power of SiC? Ready to design-in SiC? Take a look at what Wolfspeed engineers have accomplished in the applications lab. Watch now.
 

September 29, 2016
In the News: New Technology Being Developed To Increase Electric Car Range
Inverters have been used by electric and hybrid vehicles in order to have enough electricity be used from the battery to the motor. At North Carolina State University's Future Renewable Electric Energy Distribution and Management (FREEDM) Systems Center a new inverter made of silicon carbide promises to transfer 99 percent of that energy to the motor. Read more.
 

September 27, 2016
Video: SiC PFC Boost
The simplest way to benefit from SiC diodes is as a drop-in replacement for a PFC boost diode. See how easy and beneficial it is in this short video from Wolfspeed’s Thomas Barbieri, Phd. Watch now.
 

September 23, 2016
In the News: ABB Shrinks Battery Charger by a Factor of Ten
SiC-based train battery charger is 80 percent lighter than previous generation. Read more.
 

September 19, 2016
Video: The Wolfspeed MPS Diode Advantage
Wolfspeed’s broad portfolio of SiC Schottky diodes includes more than two trillion field hours and 15 years of experience, combined with the fastest delivery times. Its diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Watch now.
 

September 15, 2016
In the News: Infineon’s Acquisition of Wolfspeed Just the Beginning of Collaborations in SiC Power Electronics
After International Rectifier & Infineon, Fairchild & ON Semiconductor, Wolfspeed & APEI, and now Infineon & Wolfspeed, market analyst firm Yole Développement wonders who will be next to merge. Read now.
 

September 14, 2016
Technical Article: Simplifying Power Conversion with Medium Voltage SiC MOSFETs
Designing power conversion systems with fewer, higher-voltage MOSFETs cuts component count, increases reliability and has little impact on the total area of the chips. Read more.
 

September 8, 2016
New SiC/Si Hybrid Module from Vincotech
The flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz. Learn more.
 

September 6, 2016
Video: The Power of SiC
What’s the big deal with silicon carbide and power conversion? In this video, Wolfspeed’s Tom Barbieri, Diode Product Line Manager, reviews the electrical and amterial properties of SiC that make it such an ideal semiconductor for high power conversion. Watch now.
 

September 2, 2016
A New IPM With CIP Topology – Better, Faster In; Smaller, Cheaper Out
Vincotech is slashing costs and shrinking footprints with the flowIPM 1B CIP 600 V. This new, deeply integrated Intelligent Power Module for 600 V applications features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz. Learn more.
 

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