Realize the benefits of Silicon Carbide technology with our offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules from such industry-leading suppliers as Cree, Microsemi, Powerex and Vincotech. Incorporate SiC content into your design to achieve:
  • Improved efficiencies
  • Smaller power electronic system size
  • Higher operating temperature
  • Higher voltage operation
  • Higher power density
  • Increased heat dissipation
Utilize our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits. At anytime, please contact us for design assistance.

September 23, 2016
In the News: ABB Shrinks Battery Charger by a Factor of Ten
SiC-based train battery charger is 80 percent lighter than previous generation. Read more.
 

September 19, 2016
Video: The Wolfspeed MPS Diode Advantage
Wolfspeed’s broad portfolio of SiC Schottky diodes includes more than two trillion field hours and 15 years of experience, combined with the fastest delivery times. Its diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Watch now.
 

September 15, 2016
In the News: Infineon’s Acquisition of Wolfspeed Just the Beginning of Collaborations in SiC Power Electronics
After International Rectifier & Infineon, Fairchild & ON Semiconductor, Wolfspeed & APEI, and now Infineon & Wolfspeed, market analyst firm Yole Développement wonders who will be next to merge. Read now.
 

September 14, 2016
Technical Article: Simplifying Power Conversion with Medium Voltage SiC MOSFETs
Designing power conversion systems with fewer, higher-voltage MOSFETs cuts component count, increases reliability and has little impact on the total area of the chips. Read more.
 

September 8, 2016
New SiC/Si Hybrid Module from Vincotech
The flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz. Learn more.
 

September 6, 2016
Video: The Power of SiC
What’s the big deal with silicon carbide and power conversion? In this video, Wolfspeed’s Tom Barbieri, Diode Product Line Manager, reviews the electrical and amterial properties of SiC that make it such an ideal semiconductor for high power conversion. Watch now.
 

September 2, 2016
A New IPM With CIP Topology – Better, Faster In; Smaller, Cheaper Out
Vincotech is slashing costs and shrinking footprints with the flowIPM 1B CIP 600 V. This new, deeply integrated Intelligent Power Module for 600 V applications features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz. Learn more.
 

August 30, 2016
FAQ Available: The Proper Handling & Processing of Bare Die
This document addresses a range of topics, from die attach, wirebonding and potting materials recommendations for SiC devices, to device testing for SiC Schottky diodes. Download more.
 

August 25, 2016
In the News: Air Force Eyes Program to Develop Silicon Carbide Films for Radar and EW Semiconductor Wafers
U.S. Air Force researchers will announce a project next month to stand-up a manufacturer of affordable high quality silicon carbide films for RF and power switching semiconductor wafers for radar, electronic warfare (EW), and military communications. Read more.
 

August 24, 2016
Application Note: Wolfspeed CPW5 Z-Rec® Rectifier
Wolfspeed’s CPW5 Z-Rec® high-power SiC Schottky diodes are the industry’s first commercially-available family of 50 Amp SiC rectifiers. These diodes are designed to deliver the cost reduction, high efficiency, system simplicity and improved reliability of SiC technology to high-power systems from 50kW to over 1MW. Learn more.
 

August 17, 2016
New! 1700 V, 45 mΩ SiC MOSFET from Wolfspeed— Designed to support new 1500 V bus high-frequency applications
The C2M0045170D is the industry’s first 1700 V, 45 mΩ SiC MOSFET. It offers high-speed switching with low capacitances, avalanche ruggedness, fast intrinsic diode with low reverse recovery (Qrr), and it is easy to parallel and simple to drive. The new 1700 V platform enables smaller and higher-efficiency next-generation power conversion systems. Learn more.
 

August 16, 2016
Wolfspeed SiC Selector Guide
This updated selector guide of Wolfspeed’s extensive portfolio of commercially-available SiC power devices includes the full range of Schottky diodes (600–1700V discretes and bare die), MOSFETs, modules, gate driver boards and reference designs. Download now.
 

August 12, 2016
In the News: Meet Jayant Baliga - the Inventor of IGBT Who is Working to Kill his Own Invention
“His name is being mentioned in some science circles as a potential Nobel Prize winner. But his original equation still occupies his mind, as it predicted that a material called silicon carbide will be a hundred times more efficient than silicon. This material was not well understood then, but things have changed significantly since the 1980s…” Read more.
 

August 3, 2016
Wolfspeed Portfolio of SiC Schottky Diodes
Based on a Merged PIN Schottky (MPS) process, Wolfspeed diodes enable drastically higher forward surge capability and lower reverse leakage. This design is more robust and more reliable than a standard Schottky design. Learn more.
 

July 28, 2016
In the News: Kettering University Researchers Tapped to Develop High Efficiency Charger for PowerAmerica
Kettering University researchers in the Advanced Power Electronics Lab (APEL) are part of a team tasked by PowerAmerica with developing a high efficiency silicon carbide (SiC) electric vehicle battery charger. Read more.
 

July 25, 2016
New Wolfspeed White Paper: SiC Schottky Diode Device Design
Since their introduction some 10+ years ago, the device design, performance, and reliability of SiC diodes have continued to evolve and develop, providing new choices for design engineers. The differences between the available SiC devices must be taken into consideration when specifying the optimum devices for a given application. Read more.
 

July 21, 2016
Technical Article: EVs Race to Adopt SiC Power
As the market demand for electric vehicles continues to increase — driven in part by government regulations on fuel efficiency and CO2 emissions, social awareness, and the overall trend toward greener transportation options — a growing number of automotive manufacturers are incorporating the latest power electronics technology in their designs to improve overall performance, increase efficiency, and reduce cost, weight, and complexity… Read more.
 

July 20, 2016
RECOM DC/DC Converters for SiC MOSFET Drivers
The RKZ-xx2005D and RxxP22005D series from RECOM are specifically designed for SiC MOSFET driver applications with harsh environmental requirements. The converters feature power sharing, asymmetric outputs and wide operation temperature ranges. Learn more.

July 5, 2016
In Stock: Wolfspeed’s SiC MOSFET Evaluation Board for New 7L-D2PAK
The CRD-5FF0912P is a pre-assembled PCB assembly in a half-bridge configuration featuring two C3M0120090J SiC MOSFETs from Wolfspeed in a surface mount 7L-D2PAK package. The board allows easy evaluation of the MOSFET switching waveforms, gate drive circuit performance and protection implementation on a PCB. Use it as an evaluation tool or as a means to quickly prototype a SiC power converter. Read more.

June 23, 2016
In the News: NREL Readies New Wind-turbine Drivetrain for Commercialization
ENGINEERS AT NREL have completed tests on an unusual wind-turbine drivetrain that is the collaboration of several companies. The design sports a single-stage gearbox designed by Romax Technology, a medium-speed permanent-magnet generator, and a power converter developed by DNV Kema with high-efficiency modules developed by Cree (now Wolfspeed). The goal of the project’s first phase, which began in 2011, was to design an advanced drivetrain that could improve reliability and efficiency, reduce the cost of wind energy, and scale to larger power ratings… Read more.
 

June 22, 2016
White Paper: Using Advanced SiC Devices for Smaller, Cooler and more Efficient Drivetrain & Charging Systems
As the market demand for electric vehicles continues to increase — driven in part by government regulations on fuel efficiency and CO2 emissions, social awareness, and the overall trend toward greener transportation options — a growing number of automotive manufacturers are incorporating the latest power electronics technology in their designs to improve overall performance, increase efficiency, and reduce cost, weight, and complexity. Read more.
 

June 16, 2016
Microsemi Expands Irish Site as Silicon Carbide Takes-off
Microsemi is expanding its site in Ennis, in County Clare, Ireland, for the characterization of the latest Silicon Carbide (SiC) devices as the popularity grows for power designs. Read more.
 

June 14, 2016
In-stock now: Vincotech’s fastPack 0 SiC Power Module
The PC094PB065ME01 fastPACK 0 SiC is a faster, cooler, and even more efficient power module designed for switching frequencies up to 400 kHz. It features a fast-switching 900V SiC MOSFET that outperforms 1200V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650V MOSFETs. Learn more.
 

June 13, 2016
New 1.2kV, 3.6 mOhm All-SiC High-Performance, Half-Bridge Module C2M MOSFET and Z-RecTM Diode from Wolfspeed
The CAS325M12HM2 half-bridge and gate driver combination achieves efficiencies of over 98% and features ultra-low loss, low (5 nH) inductance, ultra-fast switching operation, and zero reverse recovery current from diode. Learn more.
 

June 2, 2016
New Simulation Tool from Wolfspeed
SpeedFit™ is Wolfspeed’s new, free simulation tool dedicated solely to simulating and evaluating the performance of silicon carbide (SiC) power devices. Learn more.
 

June 1, 2016
Thesis: Design and Control of a Bidirectional Dual Active Bridge DC-DC Converter to Interface Solar, Battery Storage, and Grid-Tied Inverters
This thesis aims to demonstrate the performance benefits of SiC MOSFETs in the dual active bridge topology. Modern modeling techniques are also explored and used to develop an enhanced digital controller, implemented in a DSP, for steady state reference tracking and load disturbance rejection. Read more.
 

May 12, 2016
New SiC Short Form Catalog from Microsemi
In addition to producing discrete SiC semiconductors, Microsemi has developed a variety of SiC and mixed semiconductor power modules. These modules, incorporating the latest in available technologies, offer rugged operation as well as high efficiency. Microsemi has a wide ranging interest in partnering with customers to provide the best SiC solution for a specific application. Download pdf version of catalog.
 

May 11, 2016
In the News: US Air Force Offering $13.5M Cooperative Agreement to Develop Large-diameter SiC Substrates and Epi
The Air Force need for sensors extends from DC to the radio-frequency spectra focusing on microwave through sub-millimeter wave (300MHz–300GHz). Exploitation of homo/hetero-epitaxial devices fabricated on SiC holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military RF and power management and distribution components… Read more.
 

May 4, 2016
1200V, 32A, 80mΩ SiC Power MOSFET
Microsemi's APT40SM120J features fast switching with low EMI/RFI, low RDS(on), ultra-low Crss for improved noise immunity, and low gate charge. It is suitable for PFC and other boost converters, buck converter, two- and single-switch forward converter, flyback converter, and inverter applications. Learn more.
 

May 4, 2016
Visit Richardson RFPD at Stand #9-415 at PCIM Europe
Features at our stand will include:
  • A drawing to win one of Wolfspeed’s new 900V SiC MOSFET evaluation kits
  • Microsemi’s new 700V SiC MOSFET family
  • The latest gate drive solutions from Power Integrations
  • Vincotech’s ultra-compact and bookshelf converter modules and 900V SiC MOSFET module
  • New SiC reference designs and SiC power supplies
  • Recom’s new DC/DC converters for SiC MOSFET drivers
  • Passive products, from Cornell Dubilier, Astrodyne, Ohmite and Kendeil
Learn more.
 

April 14, 2016
Vincotech Solutions to Speed-up Your Applications
fastPACK 0 SiC - a faster, cooler, and even more efficient power module designed for switching frequencies up to 400 kHz. Featuring a fast-switching 900V SiC MOSFET that outperforms 1200V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650V MOSFETs. Learn more.
 

April 12, 2016
In the News: Is Only Full SiC the “Real“ SiC?
SiC Schottky diodes almost completely eliminate adverse reverse-recovery effects found in Si devices, reducing IGBT switching losses by up to 60% using fast IGBT devices in hard switched conditions. By combining Silicon and SiC chips in the same package, performance improvements can be achieved at medium power levels while using cheaper wide band gap material. Read more in the April issue of Bodo’s Power Systems, starting on page 14. (Login or free registration required.)
 

April 8, 2016
In-Stock Now: Vincotech flow 3xPHASE-SiC (1200 V / 80 mΩ) for Solar Inverter, Charger and Power Supply Applications
The 10-PZ126PA080MR-M909F28Y features SiC-power MOSFETs and Schottky diodes, 3-phase inverter topology with split output, improved switching behavior, ultra-low inductance with integrated DC capacitors, a switching frequency >100 kHz, and temperature sensor. Learn more.
 

April 7, 2016
Updated: Silicon Carbide Product Selection Guide from Richardson RFPD
Download our updated SiC Selection Guide, featuring our complete portfolio of SiC-focused products from industry-leading suppliers, including Microsemi, Powerex, Vincotech and Wolfspeed. Download pdf now.
 

March 31, 2016
White Paper: High Voltage and Large Current Dynamic Test of
SiC Diodes and Hybrid Module

Abstract: High voltage and large current dynamic test for SiC diodes and hybrid module was studied. Then high voltage dynamic test for 1700V-25A 4H-SiC junction barrier schottky (JBS) diodes and high current dynamic test for a 1700V-200A half-brige SiC hybrid module were performed. With the change of test conditions, such as driving resistance and load inductance, dynamic parameters have some variation. The reverse recovery time of SiC diode and swich on/off time of SiC hybrid module under test is between 20ns to 200ns. The test got a high accuracy. These devices are very suitable for high frequency applications. Read more.
 

March 28, 2016
Meet Wolfspeed™, A Cree Company
Cree has achieved global renown as a leader in wide bandgap, SiC and GaN-based electronics for Power and RF applications. With the creation of Wolfspeed, it is poised to liberate the world’s electronics systems from the constraints of silicon with the fastest, smallest, lightest and most efficient semiconductor products on the planet. Read more.
 

March 18, 2016
Market Report: Silicon Carbide Market Analysis By Product, By End-use And Segment Forecasts To 2020
The Global Silicon Carbide Market is expected to reach USD 4.49 billion by 2020. Positive outlook on steel manufacturing, for which SiC is used as a deoxidizing agent is expected to drive silicon carbide demand. In addition, silicon carbide is an essential element in the manufacturing of semiconductors which is expected to witness significant growth over the next six years. Revitalizing automobile industry, especially in Asia Pacific, is also expected boost the demand for silicon carbide. Read more.
 

March 16, 2016
In the News: Inside the Super-Small, High-Efficiency Solar Inverters of Google’s Little Box Challenge
GaN and SiC semiconductors and novel designs pack a game-changing power density. Can they compete on cost and at scale? Read more.
 

March 11, 2016
In the News: Sandia Researchers Search for More Powerful
Semiconductor Materials

Excerpt: “Wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) allow devices to operate at much higher voltages, frequencies, and temperatures than the conventional materials, so more powerful, cheaper, and more energy-efficient electrical conversion systems can be built.” Read article.
 

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