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TriQuint is leading the way in GaN product innovation from DC to 18 GHz including discrete transistors, amplifiers and switches, supported by its unique ability to integrate and package single and multiple die in secure, US facilities. Demand for GaN technology is growing worldwide – the solution is RF innovation from TriQuint.

GaN Switches
Part Number Frequency Range
(MHz)		 Configuration Insertion Loss
(dB)		 Isolation
(dB)		 Max Input
Power (dBm)		 Switching Time
(ns)		 Package Type
TGS2351-SM 0-6000 SPDT 0.8 -40 46 50 4.0 x 4.0 x 1.43 mm
TGS2352 0-12000 SPDT 1.0 -35 43 31 1.15 x 1.65 x 0.1 mm
TGS2353 0-18000 SPDT 1.5 -30 40 31 1.15 x 1.65 x 0.1 mm

GaN HEMTs
Part Number Frequency Range
(MHz)		 P1dB
(W)		 P3dB
(W)		 Gain
(dB)		 Power Added
Efficiency (%)		 Supply Voltage
(V)		 Package Type
T1G4003532-FL 0-3500 - 37 14 54 32 Flanged
T1G4003532-FS 0-3500 - 37 14 54 32 Earless
T1G4005528-FS 0-3500 55 - 17.6 60.7 28 Ceramic
T1G6003028-FL 0-6000 33.5 - 15.2 64.1 28 Flanged
T1G6003028-FS 0-6000 33.5 - 15.2 64.1 28 Earless

GaN Power Amplifier IC
Part Number Frequency Range
(MHz)		 P1dB
(dBm)		 Gain
(dB)		 Power Added
Efficiency (%)		 Supply Voltage
(V)		 Package Type
TGA2576-FL  2500-6000 45.5 26 35 30 11.4 x 17.3 x 3.0 mm 
TGA2579-FL 13750-15350 44 32 30 25 11.4 x 17.3 x 3.0 mm



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