Welcome to the TriQuint GaN Tech Hub, your source for products, news, technical resources, and more.

PRODUCT UPDATES:

• The TGA2576-FL GaN amplifier offers the industry’s best power (30W) and PAE (30%) performance across the 2.5-6 GHz band.
• New T1G6003028-FS 30W GaN FET offers >50% drain efficiency and 14dB of gain through 6 GHz.
• DC-18 GHz TGF2023-10 HEMT offers 40 W Psat, 11.5 dB associated gain, and 53% PAE at 6 GHz.
• At 10 GHz, the TGF2023-20 provides 67.6 W Psat, 48% PAE and 8.7 dB gain – great for X-band defense applications!
• TriQuint’s 12 GHz SPDT GaN switch, the TGS2352, offers 20W of power handling and switching speeds of <50nS with -35 dB of isolation and <1 dB of insertion loss.
• The TGA2579-FL power amplifier, with over 13.75 - 15.35 GHz, provides 25 W Psat, 20 dB associated gain, and 30% PAE! Gain up to 32 dB can be achieved at lower Pout.

NEWS ALERT: TriQuint achieves record GaN reliability performance. See the full story at Microwave Engineering Europe.
NEWS ALERT: TriQuint wins GaN contract to triple performance... Read more.

BROCHURE: TriQuint’s newly-updated GaN brochure which highlights several new GaN discrete transistors.

VIDEO: Overview of TriQuint's GaN Product/Technology Development, presented by Grant Wilcox at IMS 2012 in the Richardson RFPD booth. With an updated ending message from Richardson RFPD's Tim Vaughan.

WHITE PAPER: TriQuint’s GaN products consume less bias power and board space in your designs.