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Welcome to the next-generation
TriQuint GaN Tech Hub!

If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint has been contributing to the GaN picture. And if you were around for the first version of the TriQuint Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from TriQuint and Richardson RFPD design engineers, and exclusive technical resources. We're excited about all the great new TriQuint GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!


  April 24, 2014

Gain Accurate Information on the Thermal Properties of GaN
In order to gain accurate information on the thermal properties of GaN devices, a combination of measurement methods, including micro-Raman and electrical, should be used in conjunction with
thermal simulations. Raman thermography improves upon the underestimation of device peak temperature due to lateral spatial averaging associated with conventional infrared (IR) thermography measurements.
Learn more.
 

  April 21, 2014

0.1 – 3.0 GHz 12W GaN Power Amplifier
Triquint's TGA2216 is a wideband cascode amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 48V operation. Learn more.
 

  April 17, 2014

New Video: Mark Vitellaro highlights the TriQuint TGA2594 and TGA2595
GaN Power Amplifiers
The 5W TGA2594 and 9W TGA2595 operate from 27-31 GHz and feature 23 dB gain with excellent PAE and linearity. Ideally-suited to commercial and defense SatCom, and fully-matched to 50 ohms with DC blocking caps on both I/O ports to simplify integration. View it here to learn more.
 

  April 14, 2014

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  April 10, 2014

Featured White Paper: GaN Thermal Analysis for High-Performance Systems
The paper addresses TriQuint's integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology. Read more.
 

  April 7, 2014

Live Free Webcast: Learn How to Select the Right RF Product Solution to
Improve Overall Radar Performance

Date: April 15, 2014
Time:
8am PT/ 11am ET/ 3pm UTC
Listen to TriQuint's experts as they discuss different product trades that will improve overall radar performance. Learn how to achieve better overall system PAE, NF and power. Also learn about options to decrease size, weight and power of the overall system by using the right GaAs or GaN process—or the right product for the right application. Learn more and sign-up now.
 

  April 3, 2014

Two New GaN on SiC LNAs from TriQuint
The only GaN LNAs in the industry! The TGA2611 and TGA2612 feature low noise figure, high gain, and are able to survive up to 2W of input power without performance degradation, providing exceptional flexibility with regard to receive chain protection.
 

  March 31, 2014

Featured Article: What Is The Future of RF Technology For Electronic Warfare Systems?
There are some common themes that span across electronic warfare (EW), radar, and communications that are going to underpin future system design. These include the ability to operate across wider bandwidths and at higher frequencies while generating suitable output power in the transmit chain or offering sufficient low noise capabilities in the receiver... Read more
 

  March 27, 2014

0.5 to 12 GHz SPDT GaN Switch
TriQuint’s TGS2352-2-SM provides 20W of power handling with -35 dB of isolation, <1 dB of insertion loss, and switching speed of 31 nS, in a 4x4mm QFN package. Learn more
 

  March 25, 2014

New Blog Article by Eric Higham for Richardson RFPD
Proclaims "GaN is Finally Here for Commercial RF Applications!" Cites shrinking price differential to other technologies, ongoing process improvements from companies like TriQuint, and GaN's compelling benefit of being able to produce equivalent RF output power with lower DC power dissipation. Read more
 

  March 20, 2014

TriQuint's New 6-12 GHz GaN LNA
The TGA2612 is TriQuint's second GaN LNA, and the only one on the market for X-band. Covering 6–12 GHz, it handles 2W of input power, and offers <1.8 dB noise figure, >22 dB of small signal gain, +29 dBm OIP3, and is suitable for C- and X-band A&R systems.
 

  March 17, 2014

Versatile 285W, 36V DC-2 GHz GaN RF Power Transistor in a Flangeless Package
TriQuint's T1G2028536-FS offers optimized power and efficiency at high drain bias operating conditions for a range of applications, including military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, GPS communications, and avionics. An evaluation board is also available. Learn more.
 

  March 13, 2014

18W GaN S-Band PA for Radar Applications
Operating from 2.7 to 3.7 GHz, this 18W GaN power amplifier (TGA2585) is ideal for phase array S-band radars and can support both short-pulse and CW conditions. Learn more.

 

  March 10, 2014

New 10W GaN PA for Commercial & Military Radar
The TGA2583 covers 2.7 to 3.7 GHz, is fabricated on TriQuint's 0.25um GaN on SiC process, and provides 33 dB of small signal gain while achieving 54% PAE. Higher power can be achieved at the expense of PAE by increasing the drain voltage. Learn more.

 

  March 7, 2014

#TriQuintGaN Webinar
What a great event! Did you miss the #TriQuintGaN webinar hosted by Microwave Journal? Watch it here.

 

 

See archived posts.

 



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