If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint/Qorvo has been contributing to the GaN picture. And if you were around for the first version of the Qorvo GaN Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from Qorvo and our design engineers, and exclusive technical resources. We're excited about all the great new Qorvo GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!

  May 26, 2015
NEW! 5.0-8.0 GHz GaN Driver Amplifier
The TGA2599-SM is offered in a 4x4mm plastic overmold QFN and provides +33 dBm of output power with 15 dB of large signal gain and 34 % PAE. It is a low cost driver solution that offers the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the primary amplifier on lower power architectures. Learn more.

  May 21, 2015
In the News: Modelithics and Qorvo to Significantly Expand the GaN RF Simulation Model Library
Modelithics, Inc. and Qorvo announce plans to expand the very popular Modelithics™ Qorvo GaN Library of high accuracy non-linear models for Qorvo transistors. The current GaN library version (v1.5) has 29 packaged and die transistor models. New plans include adding over 20 new Qorvo GaN transistor models. Read more.

  May 18, 2015
NEW! 3.1-3.6 GHz, 100W GaN Power Amplifier for Radar Applications
Key features of the new TGA2813-CP include:
  • Pout: +50 dBm (at PIN = +27 dBm)
  • Power gain: 23 dB (at PIN = +27 dBm)
  • PAE: 51% CW
  • Bias: VD = 30V pulsed (PW = 15 ms, DC = 30%), IDQ = 300 mA, VG = -3V typical
  • Package dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal management

  May 15, 2015
55W, 28V DC–3.5 GHz, GaN RF Power Transistor
The T2G4005528-FS is a 55W (P3dB) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz and features 16 dB linear gain at 3.3 GHz. It is constructed with TriQuint's proven 0.25 um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. Learn more.

  May 11, 2015
NEW! 3.1-3.6 GHz, 80W GaN Power Amplifier
The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. Learn more.

  May 7, 2015
2.5-6 GHz, 40W GaN Power Amplifier
The TGA2576-FS is a packaged wideband power amplifier featuring 40W of saturated output power, greater than 35% PAE and 29 dB small signal gain. It is fully matched to 50 ohm, with integrated DC blocking caps on both I/O ports, and is ideally suited to support both commercial- and defense-related opportunities. Learn more.

  May 4, 2015
NEW! 2.7-3.7 GHz, 10W GaN Power Amplifier
The TGA2583-SM typically provides +40.5 dBm of saturated output power, greater than 50% PAE, and 33 dB small signal gain. It can operate under both pulse and CW conditions and is available in a low-cost, surface mount 32 lead 5x5 AIN. Evaluation boards also available.

  April 30, 2015
Packaged 2-6 GHz GaN LNA
The TGA2611 was the industry’s first GaN LNA, and now it is available in a 4x4mm QFN package. Covering 2–6 GHz, the TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. It is ideally suited for L- and S-band A&R systems. Learn more.

  April 27, 2015
NEW! 2-6 GHz GaN Driver Amplifier
The TGA2597-SM is the packaged version of the TGA2597. It provides 32 dBm of output power with 14 dB of large signal gain and 31% PAE. It is offered in a 4x4 mm plastic overmold QFN, and it is internally matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. Learn more.

  April 23, 2015
0.5-6 GHz GaN 100W SPDT Switch
The TGS2355-SM is offered in a 5x5mm QFN package and provides insertion loss of <1.1 dB and 40 dB isolation. It is ideal for high power switching applications in both defense and commercial platforms. Learn more.

  April 20, 2015
NEW! 70W Discrete Power GaN on SiC HEMT
Key features of the TGF2957 include:
  • Frequency range: DC-12 GHz
  • +48.6 dBm nominal PSAT at 3 GHz
  • 69.6% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD=32 V, IDQ=250 mA
  • Chip dimensions: 1.01 x 3.66 x 0.10 mm

  April 16, 2015
NEW! 30W, 32V, 0.03-4 GHz GaN RF Transistor
Features of the TGF3021-SM include:
  • Output power (P3dB): 36.0W at 2 GHz
  • Linear gain: 19.3 dB at 2 GHz
  • Typical PAE3dB: 72.7% at 2 GHz
  • CW- and pulse-capable
  • 3 x 4 mm low thermal resistance package

  April 13, 2015
NEW! 55W Discrete Power GaN on SiC HEMT
The TriQuint 10.08 mm TGF2956 operates from DC-12 GHz and typically provides +47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum PAE is 69.7%, making the TGF2956 appropriate for high efficiency Defense & Aerospace and broadband wireless applications. Learn more.

  April 9, 2015
NEW! 40W Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2955 is ideal for a range of high-efficiency applications, including defense and aerospace, and broadband wireless. Key features include:
  • Frequency range: DC-12 GHz
  • +46.4 dBm nominal Psat at 3 GHz
  • 69.0% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD = 32 V, IDQ = 150 mA
  • Chip dimensions: 1.01 mm x 2.31 mm x 0.10 mm

  April 6, 2015
Richardson RFPD Announces Sponsorship of EDI CON 2015 GaN Panel
The GaN Panel will be a moderated round table discussion featuring GaN experts, including Sumit Tomar, General Manager Wireless Infrastructure Business Unit, TriQuint/Qorvo. Primary topics of discussion will include GaN's attributes for RF applications including wireless, automotive, multimedia and communications, its strengths and weaknesses compared to other technologies, and its outlook for development and adoption in new applications targeting higher frequency greenfield initiatives. The GaN Panel is scheduled for Wednesday, April 15th, from 4:15 PM to 4:45 PM, local time. Complete profiles of the presenters are available here.

  April 3, 2015
5W, 32V, 4-6 GHz, GaN RF 50 Ohm Input-Matched Transistor
The TriQuint TGF3020-SM is a 5W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Learn more.


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