PRODUCTS APPLICATIONS TECHNOLOGIES WHAT'S NEW CONTACT US









If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint/Qorvo has been contributing to the GaN picture. And if you were around for the first version of the Qorvo GaN Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from Qorvo and our design engineers, and exclusive technical resources. We're excited about all the great new Qorvo GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!


  April 23, 2015
0.5-6 GHz GaN 100W SPDT Switch
The TGS2355-SM is offered in a 5x5mm QFN package and provides insertion loss of <1.1 dB and 40 dB isolation. It is ideal for high power switching applications in both defense and commercial platforms. Learn more.
 

  April 20, 2015
NEW! 70W Discrete Power GaN on SiC HEMT
Key features of the TGF2957 include:
  • Frequency range: DC-12 GHz
  • +48.6 dBm nominal PSAT at 3 GHz
  • 69.6% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD=32 V, IDQ=250 mA
  • Chip dimensions: 1.01 x 3.66 x 0.10 mm
 

  April 16, 2015
NEW! 30W, 32V, 0.03-4 GHz GaN RF Transistor
Features of the TGF3021-SM include:
  • Output power (P3dB): 36.0W at 2 GHz
  • Linear gain: 19.3 dB at 2 GHz
  • Typical PAE3dB: 72.7% at 2 GHz
  • CW- and pulse-capable
  • 3 x 4 mm low thermal resistance package
 

  April 13, 2015
NEW! 55W Discrete Power GaN on SiC HEMT
The TriQuint 10.08 mm TGF2956 operates from DC-12 GHz and typically provides +47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum PAE is 69.7%, making the TGF2956 appropriate for high efficiency Defense & Aerospace and broadband wireless applications. Learn more.
 

  April 9, 2015
NEW! 40W Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2955 is ideal for a range of high-efficiency applications, including defense and aerospace, and broadband wireless. Key features include:
  • Frequency range: DC-12 GHz
  • +46.4 dBm nominal Psat at 3 GHz
  • 69.0% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD = 32 V, IDQ = 150 mA
  • Chip dimensions: 1.01 mm x 2.31 mm x 0.10 mm
 

  April 6, 2015
Richardson RFPD Announces Sponsorship of EDI CON 2015 GaN Panel
The GaN Panel will be a moderated round table discussion featuring GaN experts, including Sumit Tomar, General Manager Wireless Infrastructure Business Unit, TriQuint/Qorvo. Primary topics of discussion will include GaN's attributes for RF applications including wireless, automotive, multimedia and communications, its strengths and weaknesses compared to other technologies, and its outlook for development and adoption in new applications targeting higher frequency greenfield initiatives. The GaN Panel is scheduled for Wednesday, April 15th, from 4:15 PM to 4:45 PM, local time. Complete profiles of the presenters are available here.
 

  April 3, 2015
5W, 32V, 4-6 GHz, GaN RF 50 Ohm Input-Matched Transistor
The TriQuint TGF3020-SM is a 5W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Learn more.
 

  March 30, 2015
NEW! 27 Watt Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2954 typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum PAE is 71.5%, making the TGF2953 appropriate for high efficiency applications, including marine radar and satellite, point-to-point and military communications. Learn more.
 

  March 26, 2015
NEW! 2-6 GHz GaN Driver Amplifier
TriQuint’s new TGA2597 provides > +31.5 dBm of output power with > 13.5 dB of large signal gain and > 31% PAE. It operates with the same drain bias as corresponding GaN HPAs, making it an ideal driver amplifier. It can also function as the output amplifier in lower power applications. Learn more.
 

  March 23, 2015
NEW! 12 Watt Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2953 typically provides +41.2 dBm of saturated output power with power gain of 18.2 dB at 3.5 GHz. The maximum PAE is 73.7%, making the TGF2953 appropriate for high efficiency applications, including marine radar and satellite, point-to-point and military communications. Learn more.
 

  March 19, 2015
40W SPDT GaN Switch Available in QFN Package & Die Form
TriQuint’s TGS2354-SM is an SPDT GaN switch covering 0.5-6 GHz with 40W power handling, offered in a 4x4mm QFN package. It provides insertion loss of <1.1 dB and >25 dB isolation, and is ideal for high power switching applications in both defense and commercial platforms. It is also available in die form.
 

  March 16, 2015
NEW! 7 Watt Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2952 typically provides +38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications. Learn more.
 

  March 12, 2015
NEW! 13-15.5 GHz 35W GaN Power Amplifier
The TGA2239 operates from 13-15.5 GHz and provides a superior combination of power, gain and efficiency by achieving greater than 35W of saturated output power with 24.5 dB of large signal gain and greater than 32% power-added efficiency. Learn more.
 

  March 9, 2015
NEW! GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is ideally suited for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.
 

  March 5, 2015
45W RF GaN on SiC HEMT
TriQuint’s T1G4004532 is a 45W (P3dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32V. It is offered in flanged and flangeless packages.
 

  March 2, 2015
New! 30W, 32V DC–3.5 GHz GaN RF Power Transistor
TriQuint’s new T2G4003532-FL features:
  • Output Power (P3dB): 107W at 3.5 GHz
  • Linear Gain: > 14 dB at 3.5 GHz
  • Typical PAE: > 50% at 3.5 GHz
  • Ceramic, flangeless package
  • Learn more...
 

  February 26, 2015
2 to 6 GHz, 30W GaN PA
The TGA2578-CP is a packaged wideband power amplifier fabricated on TriQuint’s 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30W saturated output power with a PAE of >30%, and >26 dB small signal. Learn more.
 

  February 23, 2015
New! 100W, 28V, DC-3.5 GHz GaN RF Power Transistor
The TriQuint/Qorvo TGF2929-FS features:
  • Output Power (P3dB): 107W at 3.5 GHz
  • Linear Gain: > 14 dB at 3.5 GHz
  • Typical PAE: > 50% at 3.5 GHz
  • Ceramic, flangeless package
  • Learn more...
 

  February 19, 2015
New! 100W, 28V, DC-3.5 GHz GaN RF Power Transistor
The TriQuint/Qorvo TGF2929-FL features:
  • Output Power (P3dB): 107W at 3.5 GHz
  • Linear Gain: > 14 dB at 3.5 GHz
  • Typical PAE: > 50% at 3.5 GHz
  • Low thermal resistance package
  • Learn more...
 

  February 16, 2015
Technical Article: GaN Thermal Analysis For High-Performance Systems
Abstract: This paper addresses Qorvo’s integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology. Read more.
 

  February 12, 2015
New Family of Discrete GaN on SiC HEMTs Operating from DC to 18 GHz
The TGF2023-2 family of discrete power GaN on SiC HEMTs offer outstanding saturated output power and power added efficiency, making them appropriate for high efficiency applications. The family of products includes 6W, 12W, 25W, 50W and 90W devices. Learn more.
 

  February 9, 2015
New 10W, 32V, 0.03-3 GHz GaN RF Input-Matched Transistor
The TGF3015-SM features an integrated input matching network that enables wideband gain and power performance, while the output can be matched on-board to optimize power and efficiency for any region within the band. Ideally suited for military and civilian radar, land mobile and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications. Learn more.
 

  February 5, 2015
New! 5-8 GHz GaN Driver Amplifier
TriQuint’s TGA2599-SM provides +33 dBm of output power with 15 dB of large signal gain and 34% PAE. Using GaN MMIC technology and plastic packaging (4x4mm QFN), the TGA2599-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the primary amplifier on lower power architectures. Learn more.
 

  February 2, 2015
2.5-6 GHz 40W GaN Power Amplifier
TriQuint’s TGA2576-FS is a packaged wideband power amplifier featuring 40W of saturated output power, greater than 35% PAE and 29 dB small signal gain. It is fully matched to 50 ohm, with integrated DC blocking caps on both I/O ports, and is ideally suited to support both commercial- and defense-related opportunities. Learn more.
 

  January 29, 2015
TriQuint's Packaged 2-6 GHz GaN LNA
The TGA2611 was the industry’s first GaN LNA, and now it is available in a 4x4mm QFN package. Covering 2–6 GHz, the TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. It is ideally suited for L- and S-band A&R systems. Learn more.
 

  January 26, 2015
New! 27W Discrete Power GaN on SiC HEMT
The TriQuint TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. It typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Learn more.
 

  January 22, 2015
New 10–11 GHz, 17W GaN Power Amplifier
TriQuint’s TGA2625-CP is a packaged high-power X-band amplifier that achieves +42.5 dBm saturated output power, PAE of >40, and power gain of 28 dB. Learn more.
 

  January 20, 2015
News: TriQuint Continues Department of Defense's Trusted Source Status
TriQuint has announced that it earned continued Trusted Source Category 1A accreditation through 2016 from the Department of Defense (DoD). TriQuint has focused on achieving several milestones as a supplier to the DoD, including recently completing the Defense Production Act Title III GaN on silicon carbide (SiC) program. TriQuint also applied the U.S. Air Force Research Laboratory's rigorous manufacturing readiness assessment (MRA) tool and criteria to its GaN production line, which develops high-frequency, high-power devices used within military radar, communications and electronic warfare programs. Read more…
 

  January 16, 2015
0.5-6 GHz GaN 100W SPDT Switch
TriQuint’s TGS2355-SM is offered in a 5x5mm QFN package and provides insertion loss of <1.1 dB and 40 dB isolation. It is ideal for high power switching applications in both defense and commercial platforms. Learn more.
 

  January 12, 2015
News: Qorvo Website Launches
The merger of RFMD and TriQuint is complete, and the Qorvo website has launched, along with a new Qorvo: Core RF Solutions brochure. Learn more at www.qorvo.com and download a pdf of the brochure here.
 

  January 8, 2015
TriQuint GaN Technical Resources Library
Click here for our complete library of TriQuint GaN technical resources – including links to brochures, white papers, videos and more.
 

  January 8, 2015
TriQuint GaN Technical Resources Library
Click here for our complete library of TriQuint GaN technical resources – including links to brochures, white papers, videos and more.
 

  January 5, 2015
New 10-11GHz, 17W GaN Power Amplifier
40 %, and power gain of 28 dB. It is ideally suited for commercial and defense radar and communications applications. Learn more.
 

 

See archived posts.

 

 
Your Global Source for RF, Wireless, Energy & Power Technologies
www.richardsonrfpd.com    |    800.737.6937    |    630.262.6800
Follow us on Twitter See us on LinkedIn View our videos on YouTube Visit us on Facebook Subscribe Now!