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Welcome to the next-generation
TriQuint GaN Tech Hub!

If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint has been contributing to the GaN picture. And if you were around for the first version of the TriQuint Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from TriQuint and our design engineers, and exclusive technical resources. We're excited about all the great new TriQuint GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!


  October 23, 2014

TriQuint's Packaged 2-6 GHz GaN LNA
The TGA2611 was the industry’s first GaN LNA, and now it is available in a 4x4mm QFN package. Covering 2–6 GHz, the TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. It is ideally suited for L- and S-band A&R systems. Learn more.
 


  October 20, 2014

New! 6-12 GHz 2 Watt GaN Driver Amplifier
This new push-pull GaN on SiC driver amplifier (TGA2627-SM) operates from 6 to 12 GHz and provides +32 dBm of output power with 18 dB of large signal gain and greater than 20% power added efficiency. The push-pull topology yields > 40 dB of harmonic suppression at Psat. Learn more.
 


  October 17, 2014

In the News: Wide-bandgap Power Semiconductor Market to Grow at 63% CAGR to $500m in 2017
“… Because of their superior material properties, wide-bandgap power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) can offer performances orders-of-magnitude better than silicon devices. As a result, they are widely expected to be the next-generation power devices.” Read more.
 

  October 13, 2014

New 6-12 GHz 2W GaN Driver Amplifier
TriQuint’s TGA2598-SM achieves 2W saturated output power with a power-added efficiency of > 25 %, and 25 dB small signal gain. It is available in a low cost, 4x4 mm air-cavity ceramic QFN. Learn more.
 

  October 9, 2014

New! 2-6 GHz 2W GaN Driver Amplifier
TriQuint’s TGA2597-SM is a packaged driver amplifier that operates from 2.0 to 6.0 GHz and provides +32 dBm of output power with 14 dB of large signal gain and 31% power added efficiency. Learn more.
 

  October 6, 2014

New! 10W, 32V, 0.03 - 3.0 GHz, GaN RF Input-Matched Transistor
TriQuint’s TGF3015-SM features output power (P3dB) of 11W at 2.4 GHz, linear gain of 17.1 dB typical at 2.4 GHz, and typical PAE3dB of 62.7% at 2.4 GHz. Learn more.
 

  October 3, 2014

VIDEO: TriQuint’s Presentation at IMS 2014
Did you catch our video of Grant Wilcox, Product Line Manager for MMIC Components, delivering a presentation at this year’s IMS in Tampa? The presentation is entitled “TriQuint RF Solutions Enable Next-Generation EW, Radar and Communication Systems,” and you can see the video and download a pdf of the presentation.
 

  October 2, 2014

News: GaN to Drive Pulsed RF Power Chip Market
According to market analyst ABI Research, the pulsed RF power semiconductor device market will exceed $300 million by 2019, with GaN driving growth. TriQuint is among the named leaders for high-power RF pulsed semiconductor devices. Read more.
 

  September 25, 2014

0.03–2.5 GHz 10W GaN Power Amplifier
The TGA2237 is a wideband distributed amplifier operating from 0.03 to 2.5 GHz and providing greater than 10W of saturated output power with greater than 13 dB of large signal gain and greater than 50% PAE. Available in die or in QFN package. Ideal for commercial/military radar, communications, and EW applications.
 

  September 22, 2014

News: RFMD and TriQuint Unveil New Company Name: Qorvo™
The name Qorvo (pronounced kor-vo) conveys the combined company's ability to deliver the core technologies and innovation that will enable customers to launch their next-generation designs even faster. With a unique combination of talent and technology, Qorvo will eliminate barriers to help customers bring their most powerful new ideas to market. Read more here.
 

  September 18, 2014

New Tech Resource: FAQ on GaN Thermal Analysis for High-Performance Systems
Now available from TriQuint, this FAQ covers the challenges and considerations involved, IR, accurately estimating die-attach thermal performance, packaging options and heat extraction, emissivity, thermal conductivity, and more. Download now.
 

  September 15, 2014

40W SPDT GaN Switch Available in QFN Package & Die Form
TriQuint’s new TGS2354-SM is an SPDT GaN switch covering 0.5-6 GHz with 40W power handling, offered in a 4x4mm QFN package. It provides insertion loss of <1.1 dB and >25 dB isolation, and is ideal for high power switching applications in both defense and commercial platforms. It is also available in die form.
 

  September 11, 2014

New 100W SPDT GaN Switch
TriQuint’s new TGS2355-SM is an SPDT GaN switch covering 0.5-6 GHz with 100W power handling, offered in a 5x5mm QFN package. It provides insertion loss of <1.1 dB and 40 dB isolation, and is ideal for high power switching applications in both defense and commercial platforms. It is also available in die form.
 

  September 9, 2014

Two New Wideband, GaN on SiC Power Amplifiers for EW, Comms and Radar Applications
These new GaN PAs from TriQuint are characterized for CW operation for use in military and commercial communications, as well as electronic warfare and radar applications. They are available in low-cost, 5x5mm ceramic, air-cavity QFN packages for easy handling and board assembly. Fully-matched to 50Ω at both RF ports allows for simple system integration. Learn more.
 

  September 5, 2014

New! 0.5–6 GHz GaN 40W SPDT Switch
The TGS2354 typically supports up to 40W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 0.8 dB or less, and greater than 25 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms. Learn more.
 

  September 3, 2014

New! 240W HEMT Operates from DC to 3.5 GHz
The T1G4020036 is a 240W (P3dB, at 2.9 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 13.1 dB (typical) at 2.9 GHz, with an operating voltage of 36V. It is available in either a 4-lead flanged or an earless Gemini package.
 

  August 28, 2014

Two New Wideband, Linear GaN on SiC Power Amplifiers
These new GaN PAs from TriQuint are characterized for linear and CW wave operation for use in military and commercial communication applications, as well as jammer and other EW applications. They are available in low-cost, surface mount, 32-lead, 5x5 mm AIN QFN packages and are fully-matched to 50Ω at both RF ports, for simple system integration. Learn more.
 

  August 26, 2014

TriQuint GaN Foundry Technology Overview + Free e-Book
Learn more about TriQuint’s high-power, high-performance GaN technology, the Company’s R&D leadership, and its complete GaN solutions and services. And get your free copy of the new GaN RF Technology for Dummies e-book. Learn more.
 

  August 20, 2014

Free GaN Roundtable Webcast—Available Now On Demand
TriQuint’s Dylan Murdock recently participated in the “Keeping it Cool with GaN Thermal Management” roundtable—available now on demand! Listen now
 

  August 18, 2014

New Brochure: Market-Tested GaN Innovation from TriQuint
TriQuint's continuing development of innovative, high-performance product solutions and renowned foundry services support the RF / microwave / millimeter wave needs of global manufacturers. Download TriQuint’s latest GaN brochure, which highlights several new GaN solutions.
 

  August 14, 2014

New! 2 to 6 GHz, 30W GaN Power Amplifier
The TGA2578-CP is a packaged wideband power amplifier fabricated on TriQuint’s 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30 W saturated output power with a power-added efficiency of >30%, and >26 dB small signal. Learn more.
 

  August 11, 2014

Matching LNA also Operates from 2 to 6 GHz
The TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. Learn more.
 

  August 7, 2014

New Application Note: Analysis of a 30W PA Utilizing Modelithics’ TriQuint T2G6003028-FS Model in Agilent ADS
This note provides insight into the performance predictability of a design simulation for a single-stage microwave power amplifier (PA) reference design, based on the use of a non-linear model for the TriQuint T2G6003028-FS packaged GaN HEMT device. Read more.
 

  August 4, 2014

News: TriQuint Becomes First Manufacturer to Achieve MRL 9 for GaN
TriQuint has announced that it is the first gallium nitride (GaN) RF chip manufacturer to achieve Manufacturing Readiness Level (MRL) 9. This achievement means TriQuint's GaN manufacturing processes have met full performance, cost and capacity goals, and that the company has the capability in place to support full rate production. Read more.
 

  July 31, 2014

100W Peak Power, 20W Average Power, 32V, DC-3.5 GHz, GaN RF Power Transistors for Commercial & Defense Applications
The TGF2819-FL & TGF2819-FS wideband transistors feature linear gain >14 dB at 3.3 GHz and maximum PAE >58% at 3.3 GHz. They are ideally suited for radar, radio communications, electronic warfare and avionics applications.
 

  July 29, 2014

News: TriQuint Achieves GaN Defense Production Milestones as Part of the Defense Production Act Title III Program
TriQuint recently announced that it has successfully completed the Defense Production Act Title III Gallium Nitride on Silicon Carbide Production Capacity program. Read more.
 

  July 24, 2014

2.5–6 GHz 40W GaN Power Amplifier
The TGA2576-FS is a packaged wideband power amplifier featuring 40W of saturated output power, greater than 35% PAE and 29 dB small signal gain. It is fully matched to 50 ohm, with integrated DC blocking caps on both I/O ports, and is ideally suited to support both commercial- and defense-related opportunities. Learn more.
 

  July 21, 2014

Report: GaN Devices Could Reach More Than 20% of the Overall RF Device
Market by 2020
A new report provides analysis on applications, technical challenges and strategic initiatives related to the implementation of RF GaN for volume production. Today several companies, including TriQuint, have GaN device portfolios covering a wide range of applications. Read more.
 

  July 17, 2014

TriQuint's New Packaged 2-6 GHz GaN LNA
The TGA2611 was the industry’s first GaN LNA, and now it is available in a 4x4mm QFN package. Covering 2–6 GHz, the TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. It is ideally suited for L- and S-band A&R systems.
 

  July 14, 2014

TriQuint's New Packaged 6-12 GHz GaN LNA
The TGA2612-SM is a packaged version of the TGA2612. Covering 6–12 GHz, it handles 2W of input power, and provides 2.0 dB noise figure, 22 dB of gain, +28 dBm OIP3, and is suitable for C- and X-band A&R systems.
 

  July 10, 2014

News: GaN Power Device Market to Grow at 80% during 2016-2020 to almost $600M
Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting GaN in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated compound annual growth rate (CAGR) of 80% to almost $600m in 2020, leading to approximately 580,000 x 6” wafers being processed, according to the report ‘Power GaN Market’ from market analyst fim Yole Développement. Read more.
 

  July 7, 2014

New! X-band, 50W GaN Power Amplifier for Satellite Communications
The TGA2586-FL operates between 7.9 and 8.4 GHz and typically provides greater than 47 dBm of saturated output power, 36% PAE and 14 dB small signal gain. Learn more.
 

  July 3, 2014

New! 0.03 – 2.5 GHz 10W GaN Power Amplifier
TriQuint’s TGA2237-SM offers greater than 13 dB of large signal gain and greater than 50% PAE. It is available in a low-cost, surface mount 32-lead, 5x5 mm AIN QFN package, and it is ideally suited to support both radar and communication applications across defense and commercial markets, as well as electronic warfare. Learn more.
 


 

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