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If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint/Qorvo has been contributing to the GaN picture. And if you were around for the first version of the Qorvo GaN Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from Qorvo and our design engineers, and exclusive technical resources. We're excited about all the great new Qorvo GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!


  August 3, 2015
NEW! GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is suitable for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.
 

  July 30, 2015
NEW! 70W Discrete Power GaN on SiC HEMT
Key features of the TGF2957 include:
  • Frequency range: DC-12 GHz
  • +48.6 dBm nominal PSAT at 3 GHz
  • 69.6% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD=32 V, IDQ=250 mA
  • Chip dimensions: 1.01 x 3.66 x 0.10 mm
 

  July 27, 2015
NEW! 27-31 GHz GaN Power Amplifier
The TGA2594-HM is a packaged PA that achieves +36.5 dBm saturated output power with a power-added efficiency of 25%, and 25 dB small signal gain. It offered in a hermetically sealed 22- lead 7x7 mm ceramic QFN designed for surface mount to a printed circuit board. Learn more.
 

  July 23, 2015
NEW! 30W, 32V, 0.03-4 GHz GaN RF Transistor
Features of the TGF3021-SM include:
  • Output power (P3dB): 36.0W at 2 GHz
  • Linear gain: 19.3 dB at 2 GHz
  • Typical PAE3dB: 72.7% at 2 GHz
  • CW- and pulse-capable
  • 3 x 4 mm low thermal resistance package
 

  July 20, 2015
NEW! 6-12 GHz GaN Driver Amplifier
The TGA2627-SM is a push-pull driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. It provides +32 dBm of output power with 18 dB of large signal gain and greater than 20% power added efficiency. The push-pull topology yields > 40 dB of harmonic suppression at Psat. Offered in a 5x5 mm air-cavity QFN with an aluminum nitride base and LCP lid. Learn more.
 

  July 16, 2015
NEW! 40W Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2955 is ideal for a range of high-efficiency applications, including defense and aerospace, and broadband wireless. Key features include:
  • Frequency range: DC-12 GHz
  • +46.4 dBm nominal Psat at 3 GHz
  • 69.0% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD = 32 V, IDQ = 150 mA
  • Chip dimensions: 1.01 mm x 2.31 mm x 0.10 mm
 

  July 13, 2015
NEW! 13-18 GHz 2W GaN Driver Amplifier
The TGA2958 is a driver amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process. The TGA2958 operates from 13 – 18 GHz and achieves 2 W of saturated output power with > 21 dB of large signal gain and at least 25% power-added efficiency. It is an ideal choice to drive TriQuint’s high performing Ku-band GaN HPAs, allowing the user to operate the driver and HPA off similar voltage rails. Learn more.
 

  July 9, 2015
5W, 32V, 4-6 GHz, GaN RF 50 Ohm Input-Matched Transistor
The TGF3020-SM is a 5W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Learn more.
 

  July 6, 2015
NEW! 10-11 GHz 17W GaN Power Amplifier
The TGA2625-CP is a packaged, high power X-band amplifier that achieves +42.5 dBm saturated output power, PAE of >40%, and power gain of 28 dB. It is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It is ideal for commercial and defense radar and communications applications. Learn more.
 

  July 2, 2015
Archived Webinar Available: GaN Going Mainstream
Moderated by well-known amplifier designer and GaN expert Ray Pengelly, this online panel of GaN experts from leading manufacturers and OEMs discuss their company’s strengths in GaN technology and answer questions about the major market opportunities for GaN to reach widespread commercialization. Each panelist reviews their company’s latest capabilities and then takes questions from the audience about GaN performance, reliability, system cost reduction, improved efficiency, wider bandwidths, etc., in relation to major market opportunities. Learn more and register to listen.
 

 

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