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Welcome to the next-generation
TriQuint GaN Tech Hub!

If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint has been contributing to the GaN picture. And if you were around for the first version of the TriQuint Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from TriQuint and our design engineers, and exclusive technical resources. We're excited about all the great new TriQuint GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!


  March 2, 2015
New! 30W, 32V DC–3.5 GHz GaN RF Power Transistor
TriQuint’s new T2G4003532-FL features:
  • Output Power (P3dB): 107W at 3.5 GHz
  • Linear Gain: > 14 dB at 3.5 GHz
  • Typical PAE: > 50% at 3.5 GHz
  • Ceramic, flangeless package
  • Learn more...
 

  February 26, 2015
2 to 6 GHz, 30W GaN PA
The TGA2578-CP is a packaged wideband power amplifier fabricated on TriQuint’s 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30W saturated output power with a PAE of >30%, and >26 dB small signal. Learn more.
 

  February 23, 2015
New! 100W, 28V, DC-3.5 GHz GaN RF Power Transistor
The TriQuint/Qorvo TGF2929-FS features:
  • Output Power (P3dB): 107W at 3.5 GHz
  • Linear Gain: > 14 dB at 3.5 GHz
  • Typical PAE: > 50% at 3.5 GHz
  • Ceramic, flangeless package
  • Learn more...
 

  February 19, 2015
New! 100W, 28V, DC-3.5 GHz GaN RF Power Transistor
The TriQuint/Qorvo TGF2929-FL features:
  • Output Power (P3dB): 107W at 3.5 GHz
  • Linear Gain: > 14 dB at 3.5 GHz
  • Typical PAE: > 50% at 3.5 GHz
  • Low thermal resistance package
  • Learn more...
 

  February 16, 2015
Technical Article: GaN Thermal Analysis For High-Performance Systems
Abstract: This paper addresses Qorvo’s integrated approach to thermal design that leverages modeling, empirical measurements (including micro-Raman thermography), and finite element analysis (FEA) for high performance microwave GaN HEMT devices and MMICs. This methodology is highly effective and has been empirically validated. By properly addressing FEA boundary condition assumptions and the limitations of infrared microscopy, resulting model calculations are more accurate at both the product and end application level than traditional methods based on lower power density technology. Read more.
 

  February 12, 2015
New Family of Discrete GaN on SiC HEMTs Operating from DC to 18 GHz
The TGF2023-2 family of discrete power GaN on SiC HEMTs offer outstanding saturated output power and power added efficiency, making them appropriate for high efficiency applications. The family of products includes 6W, 12W, 25W, 50W and 90W devices. Learn more.
 

  February 9, 2015
New 10W, 32V, 0.03-3 GHz GaN RF Input-Matched Transistor
The TGF3015-SM features an integrated input matching network that enables wideband gain and power performance, while the output can be matched on-board to optimize power and efficiency for any region within the band. Ideally suited for military and civilian radar, land mobile and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications. Learn more.
 

  February 5, 2015
New! 5-8 GHz GaN Driver Amplifier
TriQuint’s TGA2599-SM provides +33 dBm of output power with 15 dB of large signal gain and 34% PAE. Using GaN MMIC technology and plastic packaging (4x4mm QFN), the TGA2599-SM provides a low cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the primary amplifier on lower power architectures. Learn more.
 

  February 2, 2015
2.5-6 GHz 40W GaN Power Amplifier
TriQuint’s TGA2576-FS is a packaged wideband power amplifier featuring 40W of saturated output power, greater than 35% PAE and 29 dB small signal gain. It is fully matched to 50 ohm, with integrated DC blocking caps on both I/O ports, and is ideally suited to support both commercial- and defense-related opportunities. Learn more.
 

  January 29, 2015
TriQuint's Packaged 2-6 GHz GaN LNA
The TGA2611 was the industry’s first GaN LNA, and now it is available in a 4x4mm QFN package. Covering 2–6 GHz, the TGA2611-SM handles 2W of input power, and offers 1.0 dB noise figure, 22 dB of gain, +18 dBm P1dB, and an OTOI of+30 dBm. It is ideally suited for L- and S-band A&R systems. Learn more.
 

  January 26, 2015
New! 27W Discrete Power GaN on SiC HEMT
The TriQuint TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. It typically provides +44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Learn more.
 

  January 22, 2015
New 10–11 GHz, 17W GaN Power Amplifier
TriQuint’s TGA2625-CP is a packaged high-power X-band amplifier that achieves +42.5 dBm saturated output power, PAE of >40, and power gain of 28 dB. Learn more.
 

  January 20, 2015
News: TriQuint Continues Department of Defense's Trusted Source Status
TriQuint has announced that it earned continued Trusted Source Category 1A accreditation through 2016 from the Department of Defense (DoD). TriQuint has focused on achieving several milestones as a supplier to the DoD, including recently completing the Defense Production Act Title III GaN on silicon carbide (SiC) program. TriQuint also applied the U.S. Air Force Research Laboratory's rigorous manufacturing readiness assessment (MRA) tool and criteria to its GaN production line, which develops high-frequency, high-power devices used within military radar, communications and electronic warfare programs. Read more…
 

  January 16, 2015
0.5-6 GHz GaN 100W SPDT Switch
TriQuint’s TGS2355-SM is offered in a 5x5mm QFN package and provides insertion loss of <1.1 dB and 40 dB isolation. It is ideal for high power switching applications in both defense and commercial platforms. Learn more.
 

  January 12, 2015
News: Qorvo Website Launches
The merger of RFMD and TriQuint is complete, and the Qorvo website has launched, along with a new Qorvo: Core RF Solutions brochure. Learn more at www.qorvo.com and download a pdf of the brochure here.
 

  January 8, 2015
TriQuint GaN Technical Resources Library
Click here for our complete library of TriQuint GaN technical resources – including links to brochures, white papers, videos and more.
 

  January 8, 2015
TriQuint GaN Technical Resources Library
Click here for our complete library of TriQuint GaN technical resources – including links to brochures, white papers, videos and more.
 

  January 5, 2015
New 10-11GHz, 17W GaN Power Amplifier
40 %, and power gain of 28 dB. It is ideally suited for commercial and defense radar and communications applications. Learn more.
 

  December 22, 2014
New 5W, 32V, 4-6 GHz, GaN RF 50 Ohm Input-Matched Transistor
The TriQuint TGF3020-SM is a 5W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Learn more.

Happy Holidays from everyone at Richardson RFPD / Arrow RF & Power!
 

  December 18, 2014
New 27W Discrete Power GaN on SiC HEMT
The TriQuint TGF2954 operates from DC to 12 GHz and typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 %, which makes the TGF2954 appropriate for high efficiency applications. Learn more.
 

  December 15, 2014
In the News: Modelithics Releases Latest TriQuint GaN RF Simulation Model Library
The TriQuint GaN library, v1.5.0, now contains precision models for 29 of TriQuint’s most popular GaN transistors, including the T1G2028536-FL, T1G4012036-FS and T2G4005528-FS package format transistors and the TGF2023-2-01, TGF2023-2-10 and TGF2954 die format transistors. Read more.
 

  December 11, 2014
40W SPDT GaN Switch Available in QFN Package & Die Form
TriQuint’s TGS2354-SM is an SPDT GaN switch covering 0.5-6 GHz with 40W power handling, offered in a 4x4mm QFN package. It provides insertion loss of <1.1 dB and >25 dB isolation, and is ideal for high power switching applications in both defense and commercial platforms. It is also available in die form.
 

  December 8, 2014
In the News: RF Micro Devices and TriQuint Semiconductor Announce Closing Date for Merger
RF Micro Devices, Inc. (Nasdaq: RFMD) and TriQuint Semiconductor, Inc. (Nasdaq: TQNT) today announced the two companies have received all necessary shareholder and regulatory approvals to move forward with their previously announced merger of equals and have set Wednesday, December 31, 2014, as the anticipated closing date for the transaction. Read more.
 

  December 4, 2014
Two New Wideband, Linear GaN on SiC Power Amplifiers
TriQuint’s TGA2216-SM and TGA2237-SM are characterized for linear and CW wave operation for use in military and commercial communication applications, as well as jammer and other EW applications. They are available in low-cost, surface mount, 32-lead, 5x5 mm AIN QFN packages and are fully-matched to 50Ω at both RF ports, for simple system integration. Learn more.
 

  December 1, 2014
Webinar: Improve Overall System Performance with New TriQuint GaN Products
Did you catch this webinar earlier this year? It’s not too late! Click here for the playback.
 

  November 26, 2014
Happy Thanksgiving Holiday to all our American friends
 

  November 24, 2014
New! 45W RF GaN on SiC HEMT
TriQuint’s T1G4004532 is a 45W (P3dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32V. It is offered in flanged and flangeless packages.
 

  November 21, 2014
2 to 6 GHz, 30W GaN PA
The TGA2578-CP is a packaged wideband power amplifier fabricated on TriQuint’s 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30W saturated output power with a PAE of >30%, and >26 dB small signal. Learn more.
 

  November 21, 2014
New 2.7-3.7 GHz, 18W GaN PA
TriQuint’s TGA2585-SM packaged GaN on SiC power amplifier typically provides +42.5 dBm of saturated output power, > 50% PAE, and 32 dB small signal gain. It can operate under both pulse and CW conditions. Learn more.
 

  November 13, 2014
Application Note: Analysis of a 30W PA Utilizing Modelithics’ TriQuint T2G6003028-FS Model in Agilent ADS
This note provides insight into the performance predictability of a design simulation for a single-stage microwave power amplifier (PA) reference design, based on the use of a non-linear model for the TriQuint T2G6003028-FS packaged GaN HEMT device. Learn more.
 

  November 10, 2014
Four New RF GaN on SiC HEMTs
These new 45W and 240W devices operate from DC to 3.5 GHz and offer outstanding gain. They are ideally suited for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier, and jammer applications. Learn more.
 

  November 6, 2014
100W Peak Power, 20W Average Power, 32V, DC-3.5 GHz, GaN RF Power Transistors for Commercial & Defense Applications
The TGF2819-FL & TGF2819-FS wideband transistors feature linear gain >14 dB at 3.3 GHz and maximum PAE >58% at 3.3 GHz. They are ideally suited for radar, radio communications, electronic warfare and avionics applications.
 

  November 3, 2014
New! 2.7 to 3.7 GHz, 10W GaN Power Amplifier
TriQuint’s TGA2583-SM typically provides 40.5 dBm of saturated output power, > 50% power-added efficiency, and 33 dB small signal gain. It can operate under both pulse and CW conditions. Learn more.
 

 

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