If you've been following our Avionics & Radar Tech Hub, then you know how much TriQuint/Qorvo has been contributing to the GaN picture. And if you were around for the first version of the Qorvo GaN Tech Hub, you know what a great resource this is for all things GaN -- new products, inside info from Qorvo and our design engineers, and exclusive technical resources. We're excited about all the great new Qorvo GaN products and developments that we'll be sending your way over the next few months. Ready? Let's go!

  August 20, 2015
NEW! 3.1-3.6 GHz, 80W GaN Power Amplifier
The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. Learn more.

  August 13, 2015
NEW! 2-22 GHz GaN Low Noise Amplifier
The TGA2227 provides >15 dB of small signal gain with 2 dB of mid-band noise figure. It can be biased over a wide range of voltage with little impact on noise figure and gain, allowing the user to minimize power dissipation depending on power and linearity requirements. The TGA2227 also features high robustness to incident power; its ability to handle +40 dBm without performance degradation makes it an ideal choice for a front-end LNA. Learn more.

  August 13, 2015
NEW! 13.4 to 15.5 GHz, 35W GaN Power Amplifier
The TGA2239-CP is a 3-stage, high-performance PA that offers > 30 dB small-signal gain with 34% PAE, allowing the system designer to achieve superior performance levels in a cost efficient manner. The new GaN PA minimizes the strain on the system-level cooling requirements, further reducing system operating costs. Superior electrical performance and thermal management make the TGA2239-CP ideal for supporting communications and radar applications in both commercial and military markets. Learn more.

  August 10, 2015
NEW! 3.1-3.6 GHz, 100W GaN Power Amplifier for Radar Applications
Key features of the new TGA2813-CP include:
  • Pout: +50 dBm (at PIN = +27 dBm)
  • Power gain: 23 dB (at PIN = +27 dBm)
  • PAE: 51% CW
  • Bias: VD = 30V pulsed (PW = 15 ms, DC = 30%), IDQ = 300 mA, VG = -3V typical
  • Package dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal management

  August 6, 2015
In the News: GaN Market to Grow at 15 Percent Over Next Six Years
Transparency Market Research has published a report this year titled 'GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021'. According to the report, the market was valued at $481.8 million in 2014 and is expected to reach $1315 million by 2021, growing at a CAGR of 15.1 percent from 2015 to 2021. Read more.

  August 3, 2015
NEW! GaN RF Power Transistor Features Linear Gain >16 dB at 3.5 GHz
The T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. It is suitable for military and civilian radar and radio communications, as well as test instrumentation, wideband/narrowband amplifiers, and jammer applications. Learn more.

  July 30, 2015
NEW! 70W Discrete Power GaN on SiC HEMT
Key features of the TGF2957 include:
  • Frequency range: DC-12 GHz
  • +48.6 dBm nominal PSAT at 3 GHz
  • 69.6% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD=32 V, IDQ=250 mA
  • Chip dimensions: 1.01 x 3.66 x 0.10 mm

  July 27, 2015
NEW! 27-31 GHz GaN Power Amplifier
The TGA2594-HM is a packaged PA that achieves +36.5 dBm saturated output power with a power-added efficiency of 25%, and 25 dB small signal gain. It offered in a hermetically sealed 22- lead 7x7 mm ceramic QFN designed for surface mount to a printed circuit board. Learn more.

  July 23, 2015
NEW! 30W, 32V, 0.03-4 GHz GaN RF Transistor
Features of the TGF3021-SM include:
  • Output power (P3dB): 36.0W at 2 GHz
  • Linear gain: 19.3 dB at 2 GHz
  • Typical PAE3dB: 72.7% at 2 GHz
  • CW- and pulse-capable
  • 3 x 4 mm low thermal resistance package

  July 20, 2015
NEW! 6-12 GHz GaN Driver Amplifier
The TGA2627-SM is a push-pull driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. It provides +32 dBm of output power with 18 dB of large signal gain and greater than 20% power added efficiency. The push-pull topology yields > 40 dB of harmonic suppression at Psat. Offered in a 5x5 mm air-cavity QFN with an aluminum nitride base and LCP lid. Learn more.

  July 16, 2015
NEW! 40W Discrete Power GaN on SiC HEMT
TriQuint’s new TGF2955 is ideal for a range of high-efficiency applications, including defense and aerospace, and broadband wireless. Key features include:
  • Frequency range: DC-12 GHz
  • +46.4 dBm nominal Psat at 3 GHz
  • 69.0% maximum PAE at 3 GHz
  • 19.2 dB nominal power gain at 3 GHz
  • Bias: VD = 32 V, IDQ = 150 mA
  • Chip dimensions: 1.01 mm x 2.31 mm x 0.10 mm

  July 13, 2015
NEW! 13-18 GHz 2W GaN Driver Amplifier
The TGA2958 is a driver amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process. The TGA2958 operates from 13 – 18 GHz and achieves 2 W of saturated output power with > 21 dB of large signal gain and at least 25% power-added efficiency. It is an ideal choice to drive TriQuint’s high performing Ku-band GaN HPAs, allowing the user to operate the driver and HPA off similar voltage rails. Learn more.

  July 9, 2015
5W, 32V, 4-6 GHz, GaN RF 50 Ohm Input-Matched Transistor
The TGF3020-SM is a 5W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Learn more.

  July 6, 2015
NEW! 10-11 GHz 17W GaN Power Amplifier
The TGA2625-CP is a packaged, high power X-band amplifier that achieves +42.5 dBm saturated output power, PAE of >40%, and power gain of 28 dB. It is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It is ideal for commercial and defense radar and communications applications. Learn more.

  July 2, 2015
Archived Webinar Available: GaN Going Mainstream
Moderated by well-known amplifier designer and GaN expert Ray Pengelly, this online panel of GaN experts from leading manufacturers and OEMs discuss their company’s strengths in GaN technology and answer questions about the major market opportunities for GaN to reach widespread commercialization. Each panelist reviews their company’s latest capabilities and then takes questions from the audience about GaN performance, reliability, system cost reduction, improved efficiency, wider bandwidths, etc., in relation to major market opportunities. Learn more and register to listen.


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