Richardson RFPD Now Offering Wolfspeed RF Products

Richardson RFPD is now franchised to sell and support the complete line of RF products from Wolfspeed, including GaN on SiC and LDMOS RF transistors, amplifers, and evaluation boards and fixtures. From simulation / non-linear modelling support, to circuit layout and design considerations, or system architecture questions, Richardson RFPD's technical sales staff and application engineering team are here to help speed your product to market.

Featured Wolfspeed RF GaN on SiC products include:

 

 

CG2H40045: 45 W, DC-4 GHz RF Power GaN HEMT

The CG2H40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CG2H40045F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Learn more.

 

 

CG2H80060D: 60 W, 8.0 GHz, GaN HEMT Die

The CG2H80060D features typical small signal gain of 15 dB at 4 GHz/12 dB at 8 GHz, 28 V operation, high breakdown voltage, high temperature operation, and high efficiency. It is suitable for a range of applications, including 2-way private radio, cellular infrastructure, and test instrumentation. Learn more.

 

 

CGH55015F2: 10 W, C-band, Unmatched, GaN HEMT

The CGH55015F2 is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in a flange package. Based on appropriate external match adjustment, the CGH55015F2 is suitable for applications up to 6 GHz. Learn more.

 

 

CGHV59350: 350 W, 5200-5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems

The CGHV59350F is designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2-5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Learn more.

 

 

CGHV96100F2: 100 W, 8.4-9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

The CGHV96100F2 features 145 W Pout typical, 10 dB power gain, 40% typical PAE, and <0.3 dB power droop. It is available in a metal/ceramic flanged package for optimal electrical and thermal performance and is ideal for marine radar, weather monitoring, air traffic control, maritime vessel traffic control and port security applications. Learn more.

 

 

CMPA801B025: 25 W, 8.5-11.0 GHz, GaN MMIC, Power Amplifier

The CMPA801B025F features 37 W POUT typical, 16 dB power gain, 36% typical PAE, 50 Ohm internally matched operations, and <0.1 dB power droop. It is available in a 10-lead metal/ceramic flanged package and is suitable for marine radar, communications, and satellite communication uplink applications. Learn more.

 

 
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Richardson RFPD
1950 S. Batavia Ave
Suite 100
Geneva, IL 60134
Contact Sales
www.richardsonrfpd.com