New! SiC MOSFET Evaluation Kit
The KIT8020CRD8FF1217P-1 evaluation kit enables IGBT-based power systems designers the ability to evaluate the high performance of CREE 1200V SiC MOSFETs and SiC Schottky diodes (SBD). The new evaluation kit can easily be configured for several topologies, including basic phase-leg configurations.
1.2kV, 80mΩ, All-SiC
Six-Pack/Three-Phase Module and Six-Channel Gate Driver
The CCS020M12CM2 includes C2M™ MOSFETs and Z-Rec™ diodes and features ultra-low loss, high-frequency operation and zero reverse recovery current from the diodes. The CGD15FB45P is a six-channel gate driver evaluation fixture for Cree’s 1200V "CM2" series six-pack power modules.
1.2kV, 13mΩ All-SiC Half-Bridge Module
The CAS120M12BM2 includes C2M™ MOSFETs and Z-Rec™ diodes and features:
Total switching energy (ESW) (@ 120A, 150 ºC): 2.1mJ
Package size: 62mm x 106mm x 30mm
Ideal for induction heating, solar and wind inverter, DC/DC converter, line regeneration drive, and battery charger applications
SiC MOSFET Power Modules
Experience the advantages of SiC power modules from Microsemi.
High speed switching
Low switching losses
Low input capacitance
Low drive requirements
Minimum parasitic inductance
650V & 1200V NPT IGBTs
Three new 650V non-punch through (NPT) IGBTs with integrated zero recovery, low leakage, SiC anti-parallel diodes from Microsemi. Available in 45A and 70A current ratings, these leading edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs in industrial applications up to 150 kHz.
1200V SiC MOSFETs Modules
This new generation of Vincotech 1200V SiC MOSFET-BASED power modules comes in two versions. One is a flow3xPHASE 0 SiC three-phase inverter module with 3x BUCK/BOOST and split output topology; the other is the flow3xBOOST 0 SiC with three-channel boost circuits.