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Welcome to Richardson RFPD
March 2014 – Energy & Power Management Newsletter  
Technical Resources

Additional Highlights

Vincotech—SiC MOFET-based Power Modules

Recom—DC/DC Converters for IGBT Applications

Wakefield-Vette—Largest Extrusion Inventory

Tamura—New Selection Guide

Cornell-Dubilier—High Reliability Flatpack Aluminum Electrolytic Capacitors

Ohmite—Resistor Selection Tips

CT-Concept—New Dual Channel Driver Core for 10-75kVA Inverters


3/17/2014 - 3/19/2014
Location: Fort Worth, TX
Fort Worth
Convention Center
Booth #208

PCIM Europe
5/20/2014 - 5/22/2014
Location: Nuremburg, Germany
Nuremberg Messe
Hall 7 Stand 102

5/20/2014 - 5/22/2014
Location: Shanghai, China
Shanghai New International Expo Center

Booth #E5-225

New 1200V, 50A SiC Six-Pack Module

When compared to state-of-the-art silicon modules, Cree's SiC 1.2 kV, 50 A modules deliver performance equivalent to silicon modules rated at 150 A. Additional features of the CCS050M12CM2 include:

  • Zero turn-off tail current
  • Zero reverse recovery current
  • High-frequency operation
  • Easy-to-drive MOS gate
  • Pin-compatible to industry-standard, IGBT,
    six-pack modules
Learn more.

Microsemi SiC MOSFET Power Modules

Microsemi's range of low profile, rugged, reliable silicon carbide (SiC) power modules offer high speed switching and low switching losses, as well as other advantages, including:

  • Low input capacitance
  • Low drive requirements
  • Minimum parasitic inductance
  • Lower system cost
Learn more.

Whitepaper: Using Ultracapacitors for
Voltage Stabilization

Gain valuable insight on how ultracapacitors can economically supply high currents and deliver large amounts of power for as long as a few minutes. Ultracapacitors can act as a supplemental power supply to stabilize network voltage during the start of an electrically driven machine. This white paper discusses the benefits of Maxwell’s ultracapacitors in voltage stabilization, including:

  • Very high power capability, both in charging
    and discharging
  • Ability to charge/discharge rapidly and repeatedly
  • Long life span
  • High operating temperatures
Download Free Whitepaper Now!

New 6.1 Generation, NX Series IGBTs

The latest NX-Series IGBTs use the 6.1 Generation CSTBT™ (Carrier Stored Trench Gate Bipolar Transistor) chip which offers significantly lower losses compared to competing chip technologies. When combined with an Aluminum Nitride Ceramic (AIN) substrate with superior thermal performance, the NX 6.1 series modules provide a very efficient, cost-effective, power module solution for a wide variety of applications.

  • Low Rth due to ALN ceramic substrate
  • Tjmax=175° C
  • Efficient utlization of chip area
  • Competitive market performance and price
Learn more.
Richardson RFPD | 800.737.6937 | 630.208.2700