New Family of 650 V GaN E-HEMTs from GaN Systems

The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

• Industry standard 5 mm x 6 mm PDFN packages
• Assembly using standard SMT process
• Scalable: 3.5 A to 11 A in the same footprint
• Fast, clean switching speed
• High switching frequency (20 MHz+)
• Low switching losses
• Low EMI
• High efficiency
• Kelvin sense
• Zero Qrr
• Bottom side cooling

 

 

GS-065-004-1-L

• Voltage: 650 V
• Current, RDS(on): 3.5 A, 500 mΩ
• Package / Size: 6 mm x 5 mm DFN
Learn more.

 

 

GS-065-008-1-L

• Voltage: 650 V
• Current, RDS(on): 8 A, 225 mΩ
• Package / Size: 5 mm x 6 mm PDFN
Learn more.

 

 

GS-065-011-1-L

• Voltage: 650 V
• Current RDS(on): 11 A 150 mΩ
• Package / Size: 5 mm x 6 mm PDFN
Learn more.

 

 
 
 
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