Microsemi has added three new 650V non-punch through (NPT) IGBTs to its offering that previously included only 1200V models. Available in 45A, 70A and 95A current ratings, these leading edge 650V NPT IGBTs allow developers to reduce total system cost by replacing more costly 600V to 650V MOSFETs for lower speed industrial applications up to 150 kHz. Leveraging Power MOS 8™ technology, the 650V products offer the industry’s best loss performance – approximately 8 percent better than the closest competing IGBT.

Also listed below are Microsemi’s previously introduced 1200V NPT IGBTs which offer a dramatic reduction of twenty percent, or more, in total switching and conduction losses as compared to competitive solutions. Designed for solar inverter, UPS and switch mode power supply applications, Microsemi’s 1200V NPT IGBTs can replace 1000V to 1200V MOSFETs in applications up to 100 KHz, at lower costs.

Contact us for sample quantities or support integrating these new products into your designs.