Richardson RFPD is sponsoring a special expert forum to discuss the most recent trends using GaN technology in high-frequency electronics and wireless communications. This panel will address all aspects of design, simulation and test verification through an understanding of system requirements for wireless communication networks. Panelists include:

    • Mario Bokatius, RF Business Development Manager of Freescale Semiconductor
      “GaN Based Power Transistors in the Cellular Infrastructure Market”

    • Damian McCann, Director of Engineering for M/A-COM Technology Solutions
      “GaN Power Transistors in COTS Plastic Packaging”

    • Jerry W. Chang, Director of Transistor Engineering for Microsemi
      “GaN Power Transistors for Avionics and Radar Market”

    • Xinjian Zhao, GaN MMIC Power Amplifier Design Engineer for Nitronex
      “A Robust 75W, 48V, 0.02-1.0 GHz Broadband GaN Amplifier”

    • Peter Xia, RF Product Application Engineer of TriQuint Semiconductor
      " GaN Doherty Amplifier for LTE Micro-Cell and Active Antenna System Applications”

Visit us at booth #274 where we bring you face-to-face with leading innovators and suppliers of RF, Wireless and Energy technologies, including:

  • Analog Devices (ADI) — New High Resolution ADCs,
    & AD9645
  • Gore0G Cable, High Throughput Production Test Cables
  • M/A-COM Technology Solutions — GaN Power Transistors in COTS Plastic Packaging
  • Nitronex — 5W GaN on Si HEMT MMIC Power Amplifier, NPA1003QAT





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