MACOM's new GaN on SiC in space-saving plastic has set the standard for pulsed L- and S-band applications, especially for reducing size, weight and power consumption (SWaP). The 3x6mm DFN packaged transistors are available in 15W, 50W, and 90W power levels and cover a variety of pulse conditions. A SOT-89 transistor is available in 5W and operates up to 4.0 GHz.