Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.

  • Extremely low stray inductance <2.9 nanohenry
  • Extremely low RDS(on) - down to 2.1 mΩ per switch
  • Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology
  • Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch
  • All die in parallel with their own gate series resistor for homogenous current balancing
  • High current capability up to 600 A at very fast switching frequency; and
  • Optional mix of assembly materials to better address different markets and applications.

Part NumberVoltageCurrent
Tc=80°C
Rdson Typ
Tj=25°C
Rdson max.
Tj=25°C
MSCMC120AM07CT6LIAG1200V210 A6.7 mΩ9.2 mΩ
MSCMC120AM04CT6LIAG1200V307 A4.2 mΩ5.6 mΩ
MSCMC120AM03CT6LIAG1200V475 A2.5 mΩ3.4 mΩ
MSCMC120AM02CT6LIAG1200V586 A2.1 mΩ2.8 mΩ
MSCMC170AM08CT6LIAG1700V207 A7.5 mΩ11.7 mΩ

 

 
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