In the air, there's no time for second chances – or second best. As the largest, most deployed provider of RF power technology on Earth, NXP continues to bolster their L-band Aerospace and Defense portfolio with the new AFV10700H.

AFV10700H / AFV10700HS
700 W Peak, 1030-1090 MHz, 50 V
  • Available in bolt-down (AFV10700H),
    or solder-down (AFV10700HS)
  • Industry's highest power density at PA-level: 700 W in 1.3" x 2.6" 50-ohm matching area
  • Qualified to operate at 52 V, and over frequencies over 960-1215 MHz
  • Supports long pulses such as ELM
    and Link 16

Learn about the AFV10700H
Check out the new 700 W L-Band device

 

Solution Map

 

L-Band and S-Band
Radar Devices

Take a look at the NXP L- and
S-Band radar solutions

 

Highest Power NB LDMOS
See the highest power LDMOS
transistor for IFF and transponders
MMRF1317H
1300 W Pulse, 1030-1090 MHz, 50 V
  • Industry's highest power narrowband LDMOS transistor for 1030-1090 MHz
  • Qualified to operate at 52 V for higher power
  • Ideal in IFF and civil transponders
MMRF1312H
1200 W Peak, 900-1215 MHz, 52 V
  • High power LDMOS transistor
  • Qualified to operate at 52 V for higher power
  • Supports long pulses such as ELM
MMRF1314H
1000 W Peak, 1200-1400 MHz, 52 V
  • High output power for smaller size L-Band radar power amplifiers
  • Ideal for use in high power military and commercial L-Band radar applications
AFV121KH
1000 W Peak, 960-1215 MHz, 50 V
  • New generation: Airfast
  • High Power LDMOS transistor leveraging SWaP requirements for secondary radar
  • Supports long pulses such as ELM
AFIC10275N
250 W Peak, 978-1090 MHz, 50 V
  • Dual-stage IC for low-size and low-weight PAs, also lowering BoM cost
  • Integrated thermal and RFout sensing for further size and BoM reduction
  • Ideal in IFF and civil transponders

 
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