WIRELESS / IOT RF FILTERS ENERGY & POWER RF

Richardson RFPD now offers you an expanded portfolio of Microchip products. From Microchip wireless (IoT) modules to Microsemi classic products such as IGBTS, Power MOSFETs, and MMICs. Turn to Richardson RFPD to aid your designs for wireless IoT connectivity, frequency control and timing, energy storage and power conversion, and RF power and small signal.

Featured Products by Application

 
 



Industry's Lowest Power LoRa® SiP Device

ATSAMR34J18B-I/7JX: Ultra small, low power LoRa® SiP. Ideal for batter applications. It uses the 32-bit ARM® Cortex®-M0+ processor and offers 256KB of Flash and 40KB of SRAM (8KB battery backed) in a compact 6 x 6 mm BGA package.

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Wi-Fi + BLE WINC3400 Xplained PRO Starter Kit

ATWINC3400-XSTK: Wi-Fi BLE Combo evaluation kit for WINC3400-MR210CA module. The WINC3400 is an IEEE 802.11 b/g/n/BLE4.0 IoT network controller SoC. It is the ideal add-on to existing MCU solutions bringing Wi-Fi and BLE Network capabilities through SPI-to-Wi-Fi interface.

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Small Bluetooth Low Energy 5.0 Module

RN4871-I/RM130: Bluetooth Low Energy 5.0 module with small form factor measuring just 9 x 11.5 x 2.1 mm. This fully-integrated module is designed for easy implementation into a broad range of applications.

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802.15.4 SAM R30M Xplained Pro Evaluation Kit

AC164159 (ATSAMR30M-XPRO): 802.15.4 hardware platform designed to evaluate the SAMR30M18A module. This kit is supported by the Atmel Studio, an integrated development platform, which provides predefined application examples.

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SAW Diplexer for GNSS, L1-L2

TDX1227: This L1+L2 GPS dual-band diplexer greatly simplifies the design of dual-band GNSS front-ends. It replaces several components, including two discrete filters and multiple discrete reactive matching elements, and features a drop-in 50 ohm impedance component.

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SAW Filter for GNSS, 1566-1614 MHz

TFS1590: This GPS/Galileo bandpass filter features sharp attenuation and low loss. The part is easy to integrate in satellite RF receivers, given its 50 ohm input/output match.

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Silicon Carbide N-Channel Power MOSFET, 700V, 90mΩ

MSC090SMA070B: Silicon carbide (SiC) power MOSFET product line from Microsemi increases your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

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Ultrafast-Recovery DQ Diodes with AEC-Q101 Qualification

DQ Diodes: Featuring ultrafast recovery times, soft recovery, low leakage current, avalanche energy rated and AEC-Q101 qualified, these diodes are suitable for AC-DC/DC-DC converters, inverters, switch mode power supply, H/EV chargers and H/EV onboard chargers & powertrain applications

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Low Inductance SiC MOSFET Power Modules

SP6LI modules: These SiC MOSFET power modules offer higher power density and a compact form factor, in a new package that enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.

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Low Inductance SP6LI Module Driver Reference Design

MSCSICSP6/REF3: This reference design provides an example of a highly isolated SiC MOSFET dual-gate driver for the SP6LI SiC phase leg modules. It can be configured by switches to drive in a half-bridge configuration with only one side on at any time and with dead time protection.

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GaN on SiC HEMT, 1200 W, 18.5 dB Gain, 1030-1090 MHz, Internally Matched

1011GN-1200V: Capable of providing >18.5 dB gain and 1200 W of pulsed RF output power at 32us, with 2% duty cycle pulse format from 1030 to 1090 MHz. Featuring internal pre-match for optimal performance, and gold metallization and eutectic attach to provide high reliability and ruggedness.

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GaN on SiC HEMT, 750 W, 16.5 dB Gain, 960-1215 MHz, Internally Matched

1214GN-700V: Capable of providing >18 dB gain and 700 W of pulsed RF output power at 300 us pulse width, with 10% duty factor from 960 to 1215 MHz. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems.

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Self-Biased GaAs MMIC pHEMT DC-26 GHz Distributed Amplifier

MMA052AA: Provides 15 dB of gain with a rising slope, 3.5 dB noise figure, and +29 dBm P3dB with the nominal bias of 235 mA from a 10 V supply. It is ideal for test instrumentation, wideband military and space applications.

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GaAs MMIC pHEMT DC-8 GHz Distributed Power Amplifier

MMA053AA: Provides 17 dB of gain, +43 dBm output IP3 and +31 dBm P3dB, while requiring only 410 mA from a 11 V supply. Gain flatness from DC to 8 GHz varies by only ±0.5 dB, making it ideal for EW, ECM, radar and test equipment applications.

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