pSemi's UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. This speed advantage results in significantly smaller power converters, which benefits the design engineer with increased power density.

With a switching frequency up to 40 MHz, pSemi’s GaN drivers deliver the industry’s fastest switching speeds, empowering design engineers to extract the full performance and switching-speed advantages from GaN transistors.

pSemi GaN Drivers

  • Compatible with leading gallium nitride (GaN) FETs
  • Built on pSemi's world-leading, silicon-on-insulator (SOI) process
  • Industry-leading switching times
  • Symmetric and asymmetric programmable minimum pulse width, propagation delay, rise/fall times dead-time controls
Part Number Max Gate
Drive
Peak Output
Current
Frequency Propagation
Delay
 
PE29101 6.5V 2A/4A source/sink 40MHz 11ns
PE29102 6.0V 2A/4A source/sink 40MHz 9ns

Evaluation Products for PE29101
The GS61008P-EVBHF facilitates the evaluation of GaN Systems’ GS61008P GaN E-HEMT and pSemi’s P29101 driver in a high-performance DC/DC synchronous buck environment. Designed for optimal performance at high switching speeds, this is a suitable development platform for applications that favor reduced physical size, weight and cost. Target applications include Class D amplifiers, DC–DC conversion, AC–DC conversion, wireless power charging, and LiDAR.
GS61008P-EVBHF100V, GaN E-HEMT buck converter with high frequency GaN driver.

Evaluation Products for PE29102
The GS61004B-EVBCD evaluation board allows the user to evaluate GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration. The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.
The GaN Systems GSWP100W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses the pSemi PE29102 gate driver and GaN Systems GS61008P E-HEMTs in a 100W 6.78MHz class EF2 power amplifier.
The GaN Systems GSWP300W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses the pSemi PE29102 gate driver and GS66508B E-HEMTs in a 300W 6.78MHz class EF2 power amplifier. With select component changes, the evaluation board can operate up to a power level of 1000W.
GS61004B-EVBCD100 V GaN E-HEMT FB EVB Optimized for Class D Amplifiers
GSWP100W-EVBPA100W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer
GSWP300W-EVBPA300W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer
 

 

 
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